The invention relates to the technical field of the semiconductor packaging, in particular to a realization method for lead bonding a thick aluminum wire. The method comprises the following four important operation key points of designing and optimizing a chopper, detecting chip surface aluminum layer thickness, optimizing and matching a bonding technical parameter, and detecting the bonding strength. As the thick aluminum wire is unlikely to oxidize, the production technology is simplified, and the cost can be obviously lowered. Meanwhile, the thick aluminum wire has the advantages of small contact resistance, low device power consumption, high bonding strength and the like. The chip aluminum layer thickness is detected by 85% phosphoric acid solution so as to ensure that the aluminum layer thickness is more than 5.0mum when the thick aluminum wire is lead bonded, and craters can be prevented from generating in the operation process. The technical parameter adopts initial power pressure, and the craters can be prevented by regulating the initial power pressure according to the practical situation. Whether the welding strength reaches the standard is judged by measuring the breaking force of the bonding wire by a gram force meter. According to the realization method for lead bonding the thick aluminum wire, the cost can be obviously lowered, the device power consumption is lowered, and the product reliability can be improved.