The invention discloses a method for depositing a
metal elementary substance thin film by atmospheric cold plasmas. The method comprises the following steps:step 1,
mixed gas is excited and ionized togenerate the atmospheric cold plasmas, and the atmospheric cold plasmas form
plasma light
flame in a cavity of a
nozzle; step 2, a
metal compound solution is atomized and then enters the cavity of the
nozzle; and step 3, under surrounding protection of the protective gas, the
plasma light
flame and
fog drops generate action,
solvent in the
fog drops is evaporated, a
metal compound in the
fog drops is reduced into metal particles, and the metal particles are sprayed onto a substrate to be deposited to form the continuous metal elementary substance thin film. According to the method, the metalelementary substance thin film can be deposited under normal pressure,
reaction temperature is low, the method is suitable for a
heat sensitive substrate, a vacuum or closed
deposition chamber is notneeded, so that the size of the substrate is not limited by space, and application range of the method is expanded; and the metal elementary substance thin film prepared by the method is stable in property, post-
processing is not needed, so that the technological process is shortened, and production efficiency is improved.