3results about "Bromide preparation" patented technology

The various embodiments of the disclosure relate generally to a process for converting industrial hydrohalide solutions to commercial metal halide solutions having a sufficient quality in terms of impurity content and color. An embodiment of the disclosure can include the steps of identifying a hydrohalide solution having organic and / or inorganic impurities neutralizing the hydrohalide solution with a basic material in one or more steps toa neutral or alkaline pH to produce a metal halide solution, filtering the metal halide solution to remove any alkaline insoluble impurities, and then adjusting pH of the metal halide solution to a pH of about 6.5 to about 8.

The invention discloses a halide nano-material, a preparation method and an application in a solid-state battery, and the preparation method comprises the following steps: carrying out wet ball-milling synthesis on a halide raw material, drying, carrying out three-stage gradient heating control in an inert atmosphere, cooling, crushing and screening to obtain the size-controllable halide nano-material, the specific three-stage gradient heating control is as follows: the first heating stage is a low-temperature desorption stage, and the temperature is increased from room temperature to 120-170 DEG C; the second heating stage is a medium-temperature crystallization stage, and the temperature is increased from 120-170 DEG C to 200-220 DEG C; and the third heating stage is a high-temperature densification stage, and the temperature is increased from 200-220 DEG C to 250-300 DEG C. According to the invention, the particle size change is substantially controllable, finally the beneficial effects that the particle size D50 is less than or equal to 0.9 mu m and the deviation is less than or equal to 5% are realized, the problem of high particle size dispersity of the existing synthesis method is overcome, the morphology and dispersity of the nano material are improved, the particle bulk density is increased, the interface contact resistance is reduced, and the preparation method is simple and convenient. The problem that the macroscopic particle interface compatibility is poor is solved.

The invention provides a method for producing a purified fluorine-containing gas composition capable of inhibiting Cr from being mixed into a surface to be processed during etching, a method for producing a semiconductor device using the method for producing the purified fluorine-containing gas composition, and an etching apparatus. The present invention relates to a method for producing a purified fluorine-containing gas composition, comprising a contact step for bringing a crude fluorine-containing gas composition containing a fluorine-containing gas composition containing 98 vol% or more of fluorine-containing molecules other than hydrogen fluoride and having a Cr concentration of 100 ppb by mass or less into contact with a solid metal fluoride at 30 DEG C or less.