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38results about "Bromide preparation" patented technology

Preparation method of mercury removing bromide

The invention discloses a preparation method of a mercury removing bromide. According to the preparation method, hydrogen bromide gathered and separated from seawater and brine-extracted bromine enrichment liquid reacts with alkaline materials to produce the corresponding mercury removing bromide. The preparation method of the mercury removing bromide comprises the technical steps of raw liquid acidization, hydrogen bromide concentration and enrichment, neutralizing preparation and distilling mother liquid recycling, wherein the step of raw liquid acidization comprises adding concentrated sulfuric acid into the seawater and brine-extracted bromine enrichment liquid for acidization; the step of hydrogen bromide concentration and enrichment comprises distilling the acidized bromine enrichment liquid for enrichment; the step of neutralizing preparation comprises neutralizing distilled and separated hydrogen bromide through alkali or alkali metal oxide to obtain the aqueous solution of themercury removing bromide; the step of distilling mother liquid recycling comprises recycling distilling and separating mother liquid back to bromine extraction for acidizing seawater and brine. The preparation method of the mercury removing bromide is simple in process, reduces energy consumption of production of the mercury removing bromide and accordingly has a broad application prospect.
Owner:自然资源部天津海水淡化与综合利用研究所

Flexible resistive random access memory based on lead-free all-inorganic perovskite thin film and prepared through chemical vapor deposition

The invention provides a chemical vapor deposition method for preparing an environment-friendly flexible resistive random access memory based on a lead-free all-inorganic perovskite thin film, and belongs to the field of nonvolatile memories. The structure of the device sequentially comprises a flexible substrate, a lower metal electrode, a lead-free perovskite resistive random access memory layerand an upper metal electrode from bottom to top. The method comprises the following steps: 1, selecting an appropriate flexible substrate, and depositing a metal conductive film on the flexible substrate to serve as a lower metal electrode; 2, adopting a chemical vapor deposition lead-free all-inorganic perovskite thin film as a resistive random access memory layer; and 3, depositing an upper metal conductive film on the surface of the resistive random access memory layer to serve as an upper metal electrode. According to the preparation method of the environment-friendly flexible resistive random access memory provided by the invention, the lead-free all-inorganic perovskite thin film is synthesized through chemical vapor deposition, and the prepared device has high bending resistance and excellent electrical properties.
Owner:SHAANXI UNIV OF SCI & TECH
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