45results about How to "Improve finishing accuracy" patented technology

The invention provides a crystal pulling ending control method and system, and the method comprises the steps: monitoring the electrical characteristic parameters of a conductive loop established between a growing single crystal and a silicon melt in real time, and enabling the electrical characteristic parameters to be related to the solid-liquid interface contact area between the single crystal and the silicon melt; calculating the deviation between the electrical characteristic parameter and the target electrical characteristic; and based on the deviation, adjusting kinetic parameters of single crystal growth to control the shrinkage rate of the solid-liquid interface contact area until the single crystal is separated from the silicon melt.