The utility model relates to the technical field of
silicon carbide devices, and discloses a
silicon carbide semiconductor device integrated with a temperature sensor, which comprises an N-type
silicon carbide substrate layer (102) and an N-type
silicon carbide epitaxial layer (103), at least two P + injection regions (105) are arranged on the N-type
silicon carbide epitaxial layer (103), N + injection regions (109) are arranged on the P + injection regions (105), a source
electrode conducting layer (106) is arranged on the P + injection region (105) on one side, and a source
electrode conducting layer (106) is arranged on the N + injection region (105) on the other side. And a T-pole conductive region (110) is arranged on the P + injection region (105) on the other side. According to the utility model, the temperature sensor is integrated into the
silicon carbide device, the
diode is used as the temperature sensor and is integrated into the source region of the silicon carbide device, and the T
electrode is independently added for the sensor, so that the high-temperature-resistant temperature sensor is realized, and the Vf value and the temperature of the
diode have good
linearity; in addition, the influence of the sensor on other parameters of the silicon carbide device is eliminated, the
layout overhead is minimized, and good compatibility is achieved.