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55results about How to "Required accuracy" patented technology

Device and method for determining a reproduction position

A device for determining a reproduction position of a source of sound for audio-visual reproduction of a film scene from a plurality of individual pictures with regard to a reproduction surface having a predetermined width and a projection source having a projection reference point comprises means for providing a recording position of the source of sound, a camera position during recording, and an aperture angle of the camera during recording. In addition, provision is made of means for transforming the recording position of the source of sound to a camera coordinate system, the origin of which is defined, in relation to a camera aperture, to obtain a recording position of the source of sound in the camera coordinate system. Means for calculating the reproduction position of the source of sound in relation to the projection reference point determines whether the aperture angle of the camera equals a predetermined aperture angle, and whether or not a source of sound is located within the visual range of the camera. If the current aperture angle of the camera differs from the predetermined standard aperture angle, the reproduction position of the source of sound is spaced toward a viewer, or away from the viewer, by a distance which depends on the ratio of the standard aperture angle to the current aperture angle. Hereby, automatable sound-source positioning is achieved so as to provide not only a visually realistic, but also an acoustically realistic situation in a reproduction room using wave-field synthesis methods.
Owner:FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV

Method of fabricating memory cell structure of flash memory having annular floating gate

The present invention relates to a memory cell structure of a flash memory and a method for fabricating the same and, more particularly, to a flash memory having annular floating gates. The present invention uses the capacitance coupling between the source and the floating gate to form a channel in the substrate under the floating gate. Hot electrons are injected into the floating gate or released from the floating gate to the control gate through inerpoly dieletric by injection point on the top of floating gate In the proposed memory cell, a floating gate is etched to form an annular shape situated between a drain, a source, and two field oxides. An interpoly dielectric and a control gate are stacked in turn on the floating gate and on the surface of the substrate not covered by the floating gate through means of self-alignment. An injection point not covered by the SiN film of the interpoly dielectric is formed on the top of the floating gate. Thereby the present invention can not only achieve self-alignment to form the control gate and apply to high-integration memory cells with small areas, but also can release electrons from the floating gate to the control gate by the FN tunneling effect to effectively increase efficiency of erasing data and reliability of devices.
Owner:WEN WEN YING
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