32results about How to "Tightly designed" patented technology

A method and corresponding apparatus is disclosed for generating a digital last for the manufacture of a shoe for a person. The method comprises obtaining a predefined digital last, the predefined digital last comprising an axis relating to the shape of the last; obtaining data of a foot of the person; and modifying the obtained predefined digital last based on the obtained data, wherein modifying comprises at least one of translation and rotation of the axis.

Structure of F-RAM cells are described. The F-RAM cell include a contact extending through a first dielectric layer on a surface of a substrate. A barrier structure is formed over the contact by depositing and patterning a barrier layer. A second dielectric layer is deposited over the patterned barrier layer and planarized to expose a top surface of the barrier structure. A ferro-stack is deposited and patterned over the barrier structure to form a ferroelectric capacitor. A bottom electrode of the ferroelectric capacitor is electrically coupled to the diffusion region of the MOS transistor through the barrier structure. The barrier layer is conductive so that a bottom electrode of the ferroelectric capacitor is electrically coupled to the contact through the barrier structure. In one embodiment, patterning barrier layer comprises concurrently forming a local interconnect (LI) on a top surface of the first dielectric layer.

A wafer-level bonding method for fabricating wafer level camera lenses is disclosed. The method includes: providing a lens wafer including lenses arranged in an array and a sensor wafer including sensors arranged in an array; measuring and analyzing an FFL of each lens to obtain a corresponding FFL compensation value for each lens; forming a thin transparent film (TTF) on each sensor of the sensor wafer, and the thickness of TTF is determined by the FFL compensation value of the corresponding lens; aligning and bonding the lens wafer with the sensor wafer having TTFs formed thereon. Since the focal length of each lens is adjusted to compensate the FFL of the lens by adding a TTF of transparent optical material with an index of refraction that is similar to the index of refraction of the sensor cover glass, the FFL variation of each camera lens can be reduced.

A single-sensor double-frequency output resonant circuit comprises a single sensor and an auxiliary resonant circuit which are connected, wherein the single sensor is formed by connecting a sensor equivalent inductor L and a sensor equivalent resistor R in series; the auxiliary resonant circuit is formed by connecting a resonant inductor L1 and a resonant capacitor C1 in series and then connecting the resonant inductor L1 and the resonant capacitor C1 with a resonant capacitor C2 in parallel. The designing method of parameters of the single-sensor double-frequency output resonant circuit includes the steps that first, the topological structure of the resonant circuit is determined, and then, according to the impedance characteristics of the resonant circuit, a resonance angular frequency equation of the resonant circuit is built, and the resonant circuit parameters are obtained. The single-sensor double-frequency output resonant circuit is simple in structure, all the parameters are designed totally according to deduction of mathematical logical relations without any additionally-added man-made supposed constraint, no computational items are ignored, the parameters are designed strictly, the circuit resonant frequency determined by the parameters is clear and accurate, the energy utilization rate of a double-frequency output induction heating power source is increased, the selectable frequency range of the double-frequency output resonant circuit is also correspondingly widened, and the double-frequency output performance of the resonant circuit is improved.

The invention establishes a circRNA expression profile for a patient with craniosynostosis, provides, provides serum circRNA marker hsa_circ_0001788 for the patient with craniosynostosis, discloses diagnostic value of hsa_circ_0001788 of serum for craniosynostosis, applies the marker herein to prepare a diagnostic kit for the patient with craniosynostosis, and provides supporting for clinical early discovery and treatment of the patient with craniosynostosis. Serum circRNA has good stability, degradation difficulty and the other advantage, has high value in auxiliary diagnosis, and is easy toclinically popularize and use. A circRNA chip is used herein to carry out detecting to obtain disease-specific and abnormally-expressed serum circRNA expression profiles; verifying is performed by means of qRT-PCR; a strict design and evaluation system is provided. It is discovered for the first time that the marker hsa_circ_0001788 in serum is an important biological detection index which causesminimal invasion and has low cost and which is applicable to clinical detection; the marker hsa_circ_0001788 is important to the clinical early diagnosis and differential diagnosis of craniosynostosis; a new idea is provided for the diagnosis of craniosynostosis in molecular level, and it is expected that early diagnostic rate of craniosynostosis is increased.

Structure and method of fabrication of F-RAM cells are described. The F-RAM cell include ferroelectric capacitors forming over and with a pre-patterned barrier structure which has a planarized / chemically and / or mechanically polished top surface. The pre-patterned barrier structure includes multiple oxygen barriers having a structure of a bottom electrode layer over an oxygen barrier layer. The bottom electrode layer forms at least a part of the bottom electrode of the ferroelectric capacitor formed thereon.

Structure of F-RAM cells are described. The F-RAM cell include a contact extending through a first dielectric layer on a surface of a substrate. A barrier structure is formed over the contact by depositing and patterning a barrier layer. A second dielectric layer is deposited over the patterned barrier layer and planarized to expose a top surface of the barrier structure. A ferro-stack is deposited and patterned over the barrier structure to form a ferroelectric capacitor. A bottom electrode of the ferroelectric capacitor is electrically coupled to the diffusion region of the MOS transistor through the barrier structure. The barrier layer is conductive so that a bottom electrode of the ferroelectric capacitor is electrically coupled to the contact through the barrier structure. In one embodiment, patterning barrier layer comprises concurrently forming a local interconnect (LI) on a top surface of the first dielectric layer.

A vision-based state estimation framework to estimate the state of an underwater remotely operated vehicle (ROV) used for inspection of an underwater structure, for example, a nuclear reactor pressure vessel. The framework employs an external overhead, pan-tilt-zoom (PTZ) camera as the primary sensing modality and incorporates prior knowledge of the geometry of the structure.