The invention relates to a fast reading device of a phase change memory, which comprises a phase change memory cell to be read, a charging circuit, an overshoot recovery rate detecting circuit, a sensitive amplifier circuit and a reference level or a reference memory cell. On one hand, the phase change memory cell (which can be abstracted as a resistor in the circuit) and a parasitic capacitor ona digit line form a resistor-capacitor (RC) circuit, and on the other hand, a gated metal oxide semiconductor (MOS) pipe instantly enters a linear region from a saturation region when being switched on/of, thereby causing an overshoot phenomenon. For phase change resistors of different states, the corresponding recovery rates after the overshoot are different. By reading the recovery rate of the digit-line level after the overshoot and fast reading the state of the phase change memory cell, the reading rate of the whole memory is accelerated. In addition, fast reading is beneficial to avoiding the damage caused by reading operation to the phase change cell, thereby achieving the purpose of reducing reading interference.