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30results about How to "Suppression mismatch" patented technology

Transistor forming method

The invention discloses a transistor forming method. The method comprises steps: a substrate with a first active region and a second active region is provided, the surface of the substrate is provided with a dielectric layer, the dielectric layer is internally provided with a first opening for enabling partial surfaces of the first active region and the second active region to be exposed, and a gate dielectric layer is arranged on the bottom surface of the first opening; first work function films are formed on the surface of the dielectric layer, and the side wall and the bottom surface of the first opening; work function adjustment processing is carried out on the first work function film in the first active region to enable the first work function film in the first active region to be converted to a second work function film; afterwards, the first work function film and a second work function film on the surface of the dielectric layer are removed, and a second work function layer located in the first active region and a first work function layer located in the second active region are formed; and after the work function adjustment processing, a gate layer filling the first opening is formed in the first opening. The transistor forming process is simplified, and the formed transistor has improved performance.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Method of forming semiconductor structure

The invention provides a method of forming a semiconductor structure. The method comprises steps of providing a substrate, wherein the surface of the substrate has a separating layer, and a first fin part and a second fin part which are adjacent to each other, the surface of the separating layer is lower than the top surfaces of the first fin part and the second fin part, the first fin part comprises a first side wall and a second side wall which are opposite to each other, and the minimal distance from the second side wall to the side wall of the second fin part is smaller than the minimal distance from the first side wall to the side wall of the second fin part; forming a first mask layer on the surfaces of the separating layer, the second fin part and the first fin part, wherein the first mask layer exposes the first side wall of the first fin part and covers a part of the separating layer of the first side wall; taking the first mask layer as a mask layer, and doping first obstruction ions in the separating layer; and carrying out an annealing process to enable the first obstruction ions in the separating layer to be diffused toward the first fin part. The performance of a fin-type field effect transistor formed by the semiconductor structure is improved, and the mismatch problem of the fin-type field effect transistor is reduced.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Active noise reduction earphone sound source positioning method and device with correction function

The invention discloses an active noise reduction earphone sound source positioning method and device with a correction function. The method comprises the following steps of respectively transmittinga test signal by a denoising loudspeaker under an ideal fitting condition and an actual fitting condition, obtaining a receiving signal reflecting an ideal fitting characteristic and an actual fittingcharacteristic by an error sensor, and respectively calculating a first transmission function under the ideal fitting condition and a second transmission function under the actual fitting condition,calculating a correction function by using the second transmission function and the first transmission function, calculating a binaural sound signal cross-correlation function according to the signalreceived by the noise microphone under the actual fitting condition and the correction function, and matching the binaural sound signal cross-correlation function with a pre-stored binaural sound signal cross-correlation function template to obtain azimuth information of the sound source. The actual received signal of the earphone noise microphone is corrected by using the calculation result, so that mismatch between the in-ear microphone and the ear canal fitting state is suppressed, and the sound source positioning performance can be effectively improved.
Owner:XIAMEN PADMATE TECH CO LTD

Formation method of semiconductor structure

The invention provides a method of forming a semiconductor structure. The method comprises steps of providing a substrate, wherein the surface of the substrate has a separating layer, and a first fin part and a second fin part which are adjacent to each other, the surface of the separating layer is lower than the top surfaces of the first fin part and the second fin part, the first fin part comprises a first side wall and a second side wall which are opposite to each other, and the minimal distance from the second side wall to the side wall of the second fin part is smaller than the minimal distance from the first side wall to the side wall of the second fin part; forming a first mask layer on the surfaces of the separating layer, the second fin part and the first fin part, wherein the first mask layer exposes the first side wall of the first fin part and covers a part of the separating layer of the first side wall; taking the first mask layer as a mask layer, and doping first obstruction ions in the separating layer; and carrying out an annealing process to enable the first obstruction ions in the separating layer to be diffused toward the first fin part. The performance of a fin-type field effect transistor formed by the semiconductor structure is improved, and the mismatch problem of the fin-type field effect transistor is reduced.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Video frame rate up-conversion method based on pixel semantic matching

The invention relates to a video frame rate up-conversion method based on pixel semantic matching, and effectively solves the problem that the prediction quality of an interpolated frame is seriously influenced due to the fact that the BME block mismatching suppression capability is limited by adopting inter-block semantics in the prior art. The method comprises the following steps: taking a tth frame Ft in a video sequence as a to-be-interpolated frame, a (t-1) th frame Ft-1 in the video sequence as a forward reference frame of the to-be-interpolated frame Ft, and a (t + 1) th frame Ft + 1 in the video sequence as a backward reference frame of the to-be-interpolated frame Ft, extracting semantic features pixel by pixel for the forward reference frame Ft-1 and the backward reference frame Ft + 1; generating a front semantic layer Lt-1 of the forward reference frame Ft-1 and a rear semantic layer Lt + 1 of the backward reference frame Ft + 1; taking Lt-1 and Lt + 1 as new channels of Ft-1 and Ft + 1 respectively, merging and calculating as Xt-1 and Xt + 1, taking Ft as a center, implementing bidirectional block matching according to the new channel Xt-1 of Ft-1 and the new channel Xt + 1 of Ft + 1, and generating a motion vector field Vt of the frame Ft to be interpolated; and performing overlapped block motion compensation interpolation according to the motion vector fields Vt of adjacent Ft-1, Ft + 1 and Ft to obtain a frame Ft to be interpolated.
Owner:XINYANG NORMAL UNIVERSITY

N polar surface AlGaN-based ultraviolet photoelectric detector epitaxial structure and preparation method thereof

The invention discloses an epitaxial structure of an N-polar surface AlGaN-based ultraviolet photoelectric detector and a preparation method of the epitaxial structure. The N polar surface AlGaN-based ultraviolet photoelectric detector epitaxial structure comprises a non-doped N polar surface AlN buffer layer, a carbon-doped semi-insulated N polar AlN buffer layer, a carbon-doped N polar surface component gradient Al < y > Ga < 1-y > N buffer layer and a non-doped N polar surface Al < x > Ga < 1-x > N layer which are sequentially grown on a silicon substrate, wherein x is equal to 0.5 to 0.8, and y is equal to 0.75 to 0.95. According to the N-polar surface AlGaN-based ultraviolet photoelectric detector epitaxial structure provided by the invention, the power and the detection rate of an AlGaN-based ultraviolet detector are enhanced, the photoelectric responsivity of the ultraviolet photoelectric detector is improved, and the processing difficulty of subsequent devices is effectively reduced; according to the preparation method provided by the invention, the dislocation density and the surface roughness of the N-polarity AlGaN epitaxial layer grown by high-temperature MOCVD (Metal Organic Chemical Vapor Deposition) are reduced.
Owner:SOUTH CHINA UNIV OF TECH

Charge pump circuit for suppressing current mismatch, control method thereof, and phase-locked loop circuit

A charge pump circuit for suppressing current mismatch, its control method, and a phase-locked loop circuit, relating to the technical field of communications, comprising: a first control circuit (10), a second control circuit (20) and a first feedback circuit (30) ; The first control circuit is used to input the first current from the first current input node (D1) to the second feedback node (E2); the first feedback circuit is used to connect the first feedback node (E1) and the filter node (Vx) Under the control of the control, the value of the current input to the second feedback node is equal to the value of the first current; the second control circuit is used to ensure that the potential of the third control signal from the third control node (K3) is an effective potential, and from When the potential of the fourth control signal of the fourth control node (K4) is an effective potential, the second current from the second current input node (D2) is input to the output node (Vout), and the value of the first current is equal to The current input to the second feedback node. The charge pump circuit can suppress the current mismatch between the charging current and the discharging current, thereby ensuring the stability of the output voltage of the charge pump.
Owner:HUAWEI TECH CO LTD
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