31results about How to "Suppression mismatch" patented technology

There is provided a low-cost wide band antenna having an ultra-wide band and high performance. The wide band antenna includes an antenna element to form a shape of a ridge waveguide open cross-section structure together with GND (10) when it is spread. The antenna element has a ridge element portion (13) corresponding to the ridge portion of the ridge waveguide and a radiation element portion (14) corresponding to the wall of the ridge waveguide and extending from the ridge element portion (13) for electromagnetic wave radiation. Moreover, the antenna element has an opposing auxiliary element (12) having the same shape and structure as the ridge element portion (13). The radiation element portion (14) has an end arranged on the GND (10). The ridge element portion (13) has a tip end connected to a power supply terminal (100).

Provided is a wide band antenna having ultra-wide band and high performance at a low cost. An antenna element constituting a part of an opening cross section structure of a double cylinder ridge waveguide is spread on a plane. The antenna element has a ridge element portion (21) for adjusting antenna characteristic corresponding to a ridge portion and a radiation element portion (22) for electromagnetic wave radiation. Substantially at a leading end portion of the ridge element portion (21), a feeder terminal (24) is formed. Ground portions (23a and 23b) are maintained at a ground potential and the feeder terminal (24) is guided to an outside as a coplanar waveguide.

The invention discloses a charge pump of a source-end switch, a phase-locked loop circuit and a method for inhibiting a feed-through effect. The charge pump of the source-end switch comprises a current source circuit in the output stage, wherein the current source circuit comprises a switching tube with the grid serving as the switch end of the charge pump, a current source tube with the source connected with the drain of the switching tube and with the drain serving as the output end of the charge pump, and a feed-through inhibiting capacitor, installed between the grid end of the switching tube and the grid end of the current source tube for inhibiting the feed-through effect. According to the charge pump of the source-end switch, the phase-locked loop circuit and the method for inhibiting the feed-through effect, the technical problem that in the prior art the feed-through effect of the charge pump of the source-end switch is very difficult to inhibit due to permanent overlap capacitances is solved.

To provide a connector wherein ground terminals can be designed easily, which not only suppresses the occurrence of impedance mismatch and crosstalk, but which does not lead to interferences between contacting portions. A ground terminal for a connector has a cylindrical main body. A plurality of contacting portions, for contacting a circuit board, are formed on the bottom edge of the cylindrical main body. The ground terminal has, as contacting portions, inner contacting portions and outer contacting portions. The inner contacting portions extend toward the inside of the cylindrical main body and in the downward direction, and the outer contacting portions extend toward the inside of the cylindrical main body and in the downward direction.

The invention discloses a switching current device and a digital-analog converter based on the same. The device comprises a complementary current switch module to be corrected and a correction circuit module. The correction circuit module comprises a comparator, a correction control unit and differential switch gating control unit. The complementary current switch module comprises a sub-digital-to-analog converter, a first current source, a second current source, a first switch unit and a second switch unit. The comparator is connected with the output end of the complementary current switch module to be corrected and the correction control unit. The correction control unit is connected with the sub-digital-to-analog converter and the differential switch gating control unit. The differential switch gating control unit is connected with the first switch unit and the second switch unit. The first switch unit is connected between the first current source and an output end; and the second switch unit is connected between the second current source and the output end. By suppressing mismatch introduced by the switch units, errors of output current can be reduced fundamentally.

A charge pump circuit includes a capacitor, a current source circuit coupled to the capacitor for providing a charging current and a discharging current to the capacitor. The current source circuit includes a switch transistor with a gate terminal for receiving a control signal, a current source transistor having a source terminal coupled to a drain of the switch transistor, and a feedthrough suppression capacitor coupled between a gate terminal of a gate terminal of the switch transistor and a gate terminal of the current source transistor. The feedthrough suppression capacitor is configured to lower a feedthrough effect.

The invention discloses a transistor forming method. The method comprises steps: a substrate with a first active region and a second active region is provided, the surface of the substrate is provided with a dielectric layer, the dielectric layer is internally provided with a first opening for enabling partial surfaces of the first active region and the second active region to be exposed, and a gate dielectric layer is arranged on the bottom surface of the first opening; first work function films are formed on the surface of the dielectric layer, and the side wall and the bottom surface of the first opening; work function adjustment processing is carried out on the first work function film in the first active region to enable the first work function film in the first active region to be converted to a second work function film; afterwards, the first work function film and a second work function film on the surface of the dielectric layer are removed, and a second work function layer located in the first active region and a first work function layer located in the second active region are formed; and after the work function adjustment processing, a gate layer filling the first opening is formed in the first opening. The transistor forming process is simplified, and the formed transistor has improved performance.

An image processing apparatus and a control method that, when a print job to be re-executed is stored, deletes authentication information required for an authentication function in a printing system from among print attributes included in the print job, and then stores the print job in the printing system.

A contactless power transmission device includes a switching unit that switches a power transmission line so that a first power is transmitted through the first line when an AC power supply outputs a first AC power and so that a second power is transmitted through a second line when the AC power supply outputs a second AC power. An impedance conversion unit is arranged on the second line that converts an impedance from an output of the AC power supply to a variable load when the second power is transmitted through the second line to approach an impedance from the output of the AC power supply to the variable load when the first power is transmitted through the first line.

The invention provides a method of forming a semiconductor structure. The method comprises steps of providing a substrate, wherein the surface of the substrate has a separating layer, and a first fin part and a second fin part which are adjacent to each other, the surface of the separating layer is lower than the top surfaces of the first fin part and the second fin part, the first fin part comprises a first side wall and a second side wall which are opposite to each other, and the minimal distance from the second side wall to the side wall of the second fin part is smaller than the minimal distance from the first side wall to the side wall of the second fin part; forming a first mask layer on the surfaces of the separating layer, the second fin part and the first fin part, wherein the first mask layer exposes the first side wall of the first fin part and covers a part of the separating layer of the first side wall; taking the first mask layer as a mask layer, and doping first obstruction ions in the separating layer; and carrying out an annealing process to enable the first obstruction ions in the separating layer to be diffused toward the first fin part. The performance of a fin-type field effect transistor formed by the semiconductor structure is improved, and the mismatch problem of the fin-type field effect transistor is reduced.

A charge pump circuit and phase-locked loop include start, bias, current mirror, charging and discharging feedback control, and charging and discharging matching modules, which are electrically connected in sequence. The start module starts the bias module. The bias module generates constant bias current and outputs same to the current mirror module, which receives and amplifies the bias current for output in two paths. The charging and discharging feedback control module detects the output voltage of a charge pump and controls, according to feedback of the output voltage, the current in the charging and discharging matching module, to suppress the mismatch between charging and discharging currents. The charging and discharging matching module receives an external charging or discharging control signal, to charge or discharge the output load of the charge pump. Charging and discharging currents can be matched within a wide output voltage range, without an operational amplifier.

The invention discloses an active noise reduction earphone sound source positioning method and device with a correction function. The method comprises the following steps of respectively transmittinga test signal by a denoising loudspeaker under an ideal fitting condition and an actual fitting condition, obtaining a receiving signal reflecting an ideal fitting characteristic and an actual fittingcharacteristic by an error sensor, and respectively calculating a first transmission function under the ideal fitting condition and a second transmission function under the actual fitting condition,calculating a correction function by using the second transmission function and the first transmission function, calculating a binaural sound signal cross-correlation function according to the signalreceived by the noise microphone under the actual fitting condition and the correction function, and matching the binaural sound signal cross-correlation function with a pre-stored binaural sound signal cross-correlation function template to obtain azimuth information of the sound source. The actual received signal of the earphone noise microphone is corrected by using the calculation result, so that mismatch between the in-ear microphone and the ear canal fitting state is suppressed, and the sound source positioning performance can be effectively improved.

The invention provides a method of forming a semiconductor structure. The method comprises steps of providing a substrate, wherein the surface of the substrate has a separating layer, and a first fin part and a second fin part which are adjacent to each other, the surface of the separating layer is lower than the top surfaces of the first fin part and the second fin part, the first fin part comprises a first side wall and a second side wall which are opposite to each other, and the minimal distance from the second side wall to the side wall of the second fin part is smaller than the minimal distance from the first side wall to the side wall of the second fin part; forming a first mask layer on the surfaces of the separating layer, the second fin part and the first fin part, wherein the first mask layer exposes the first side wall of the first fin part and covers a part of the separating layer of the first side wall; taking the first mask layer as a mask layer, and doping first obstruction ions in the separating layer; and carrying out an annealing process to enable the first obstruction ions in the separating layer to be diffused toward the first fin part. The performance of a fin-type field effect transistor formed by the semiconductor structure is improved, and the mismatch problem of the fin-type field effect transistor is reduced.

The invention discloses an LTCC bandpass filter which adopts a feeding structure to suppress the third harmonic, including two quarter-wavelength resonators, two feeding patches and a floor, which are respectively distributed on nine conductor layers, Connected through metal vias; layers 1, 3, 6, and 9 are the floor, layers 2, 4, 5, and 7 are the layers where the quarter-wavelength resonators are located, and layer 8 is the layer where the feed patch is located ; By adjusting the distance between the eighth conductor layer and the ninth conductor layer, the impedance characteristics of the feed patch can be changed, thereby changing the coupling between the feed patch and the resonator; changing the length of the feed patch can also change The coupling between the feed patch and the resonator; adjusting the coupling of these two parts can make the feed patch and the resonator mismatch, thereby suppressing the third harmonic part of the filter characteristic of the resonator, and achieving the purpose of wide stopband; the present invention The adopted LTCC process contains a multi-layer structure, reduces the size of the filter, and has novelty, creativity and practicability.

Provided is a wide band antenna having ultra-wide band and high performance at a low cost. An antenna element constituting a part of an opening cross section structure of a double cylinder ridge waveguide is spread on a plane. The antenna element has a ridge element portion (21) for adjusting antenna characteristic corresponding to a ridge portion and a radiation element portion (22) for electromagnetic wave radiation. Substantially at a leading end portion of the ridge element portion (21), a feeder terminal (24) is formed. Ground portions (23a and 23b) are maintained at a ground potential and the feeder terminal (24) is guided to an outside as a coplanar waveguide.

The invention relates to a video frame rate up-conversion method based on pixel semantic matching, and effectively solves the problem that the prediction quality of an interpolated frame is seriously influenced due to the fact that the BME block mismatching suppression capability is limited by adopting inter-block semantics in the prior art. The method comprises the following steps: taking a tth frame Ft in a video sequence as a to-be-interpolated frame, a (t-1) th frame Ft-1 in the video sequence as a forward reference frame of the to-be-interpolated frame Ft, and a (t + 1) th frame Ft + 1 in the video sequence as a backward reference frame of the to-be-interpolated frame Ft, extracting semantic features pixel by pixel for the forward reference frame Ft-1 and the backward reference frame Ft + 1; generating a front semantic layer Lt-1 of the forward reference frame Ft-1 and a rear semantic layer Lt + 1 of the backward reference frame Ft + 1; taking Lt-1 and Lt + 1 as new channels of Ft-1 and Ft + 1 respectively, merging and calculating as Xt-1 and Xt + 1, taking Ft as a center, implementing bidirectional block matching according to the new channel Xt-1 of Ft-1 and the new channel Xt + 1 of Ft + 1, and generating a motion vector field Vt of the frame Ft to be interpolated; and performing overlapped block motion compensation interpolation according to the motion vector fields Vt of adjacent Ft-1, Ft + 1 and Ft to obtain a frame Ft to be interpolated.

The invention discloses an epitaxial structure of an N-polar surface AlGaN-based ultraviolet photoelectric detector and a preparation method of the epitaxial structure. The N polar surface AlGaN-based ultraviolet photoelectric detector epitaxial structure comprises a non-doped N polar surface AlN buffer layer, a carbon-doped semi-insulated N polar AlN buffer layer, a carbon-doped N polar surface component gradient Al < y > Ga < 1-y > N buffer layer and a non-doped N polar surface Al < x > Ga < 1-x > N layer which are sequentially grown on a silicon substrate, wherein x is equal to 0.5 to 0.8, and y is equal to 0.75 to 0.95. According to the N-polar surface AlGaN-based ultraviolet photoelectric detector epitaxial structure provided by the invention, the power and the detection rate of an AlGaN-based ultraviolet detector are enhanced, the photoelectric responsivity of the ultraviolet photoelectric detector is improved, and the processing difficulty of subsequent devices is effectively reduced; according to the preparation method provided by the invention, the dislocation density and the surface roughness of the N-polarity AlGaN epitaxial layer grown by high-temperature MOCVD (Metal Organic Chemical Vapor Deposition) are reduced.

An illumination apparatus which is capable of suppressing a mismatch between color temperature information for each of a plurality of light emitting units that illuminate a subject with light. Whether an optical accessory for toning or adjusting a light distribution angle is attached is detected for each of the plurality of light emitting units. The color temperature information indicative of a color temperature in a light emission when the plurality of light emitting units are caused to emit the light is decided according to light emission information indicative of a light emission state in each of the plurality of light emitting units and a detection result.

A method for forming a transistor, comprising: providing a substrate having a first active region and a second active region, a dielectric layer is provided on the surface of the substrate, and a portion of the first active region and the second active region are exposed in the dielectric layer. The first opening on the surface of the region, the bottom surface of the first opening has a gate dielectric layer; the first work function film is formed on the surface of the dielectric layer, the sidewall and the bottom surface of the first opening; the first work function film of the first active region The work function film is subjected to work function adjustment treatment, so that the first work function film in the first active region is transformed into a second work function film; after that, the first work function film and the second work function film on the surface of the dielectric layer are removed to form a A second work function layer in the active area, and a first work function layer located in the second active area; after the work function adjustment process, a gate layer filling the first opening is formed in the first opening. The process of forming the transistor is simplified, and the performance of the formed transistor is improved.

A charge pump circuit and phase-locked loop include start, bias, current mirror, charging and discharging feedback control, and charging and discharging matching modules, which are electrically connected in sequence. The start module starts the bias module. The bias module generates constant bias current and outputs same to the current mirror module, which receives and amplifies the bias current for output in two paths. The charging and discharging feedback control module detects the output voltage of a charge pump and controls, according to feedback of the output voltage, the current in the charging and discharging matching module, to suppress the mismatch between charging and discharging currents. The charging and discharging matching module receives an external charging or discharging control signal, to charge or discharge the output load of the charge pump. Charging and discharging currents can be matched within a wide output voltage range, without an operational amplifier.

A charge pump circuit for suppressing current mismatch, its control method, and a phase-locked loop circuit, relating to the technical field of communications, comprising: a first control circuit (10), a second control circuit (20) and a first feedback circuit (30) ; The first control circuit is used to input the first current from the first current input node (D1) to the second feedback node (E2); the first feedback circuit is used to connect the first feedback node (E1) and the filter node (Vx) Under the control of the control, the value of the current input to the second feedback node is equal to the value of the first current; the second control circuit is used to ensure that the potential of the third control signal from the third control node (K3) is an effective potential, and from When the potential of the fourth control signal of the fourth control node (K4) is an effective potential, the second current from the second current input node (D2) is input to the output node (Vout), and the value of the first current is equal to The current input to the second feedback node. The charge pump circuit can suppress the current mismatch between the charging current and the discharging current, thereby ensuring the stability of the output voltage of the charge pump.

A monolithic semiconductor device is constructed by a plurality of repetitive cells each including one circuit section and one current source for supplying a current to said circuit section, and a plurality of first impedance circuits, each connected between the current sources of two of the repetitive cells, for reducing the effect of cell mismatches among the repetitive cells.