3results about "Dielectric/insulating layers" patented technology

To provide a semiconductor device in which power consumption is reduced and nondestructive reading is possible.SOLUTION: A first transistor, a first 1FTJ component, and a second 2FTJ component. The first end of the first transistor is electrically connected to the first end of the 1FTJ device and the second end of the 2FTJ device. In data writing, polarization is caused according to data in each of the 1FTJ device and the 2FTJ device. For reading, a voltage is applied between the outputs of the 1FTJ elements and the inputs of the 2FTJ elements such that the polarization does not change. At this time, by turning on the first transistor, a differential current between the current flowing through the first 1FTJ device and the current flowing through the second 2FTJ device flows through the first transistor. By acquiring the differential current using a read circuit or the like, the 1FTJ device and the datum written in the 2FTJ device can be read.SELECTED DRAWING: Figure 1

Provided is a semiconductor device of reduced power consumption that is capable of non-destructive reading. The semiconductor device comprises a first transistor, a first FTJ element, and a second FTJ element. The first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element and an input element of the second FTJ element. In data writing, polarization occurs in each of the first FTJ element and the second FTJ element according to the data. In data reading, a voltage that does not change the polarization is applied between the output terminal of the first FTJ element and the input terminal of the second FTJ element. At that time, the first transistor is set to the on state, and thereby the difference current between the current flowing through the first FTJ element and the current flowing through the second FTJ element flows through the first transistor. The difference current is acquired using a read circuit, etc., and thereby the data written in the first FTJ element and the second FTJ element can be read.

A semiconductor device that has lower power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first transistor, a first FTJ element, and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element and an input terminal of the second FTJ element. In data writing, polarization is caused in each of the first FTJ element and the second FTJ element in accordance with the data. In data reading, voltage with which the polarization does not change is applied between the output terminal of the first FTJ element and the input terminal of the second FTJ element. At this time, the first transistor is turned on, whereby a differential current between current flowing through the first FTJ element and current flowing through the second FTJ element flows through the first transistor. Obtaining the differential current using a read circuit or the like enables the data written to the first FTJ element and the second FTJ element to be read.