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An area light source comprising an LED primary light source (2), a plate-like light guide (4) and a light deflector (6) is provided with a direct light incoming prevention means closed of a light-blocking member (9). The light guide (4) has a light incoming end face (41) and a light outgoing face (43) and guides a light emitted from the LED primary light source (2). The light deflector (6) is arranged adjacently to the light outgoing face (43) and has a light entering face (61) and a light exiting face (62). The direct light incoming prevention means prevents a light, which is emitted from the LED primary light source (2), from entering into the light deflector (6) without passing through the light guide (4). The light-blocking deflector (9) is disposed on a first region of the light outgoing face (43) which is located near the edge of the light incoming end face side of the light outgoing face (4). The surface of the light-blocking member (9) facing the light outgoing face (43) is a diffusing reflective surface. The light deflector (6) is disposed on a second region of the light outgoing face (43) where the light-blocking member (9) is not arranged.

A main magnetic pole layer is formed on an insulating layer flattened into a high-flatness surface, and a yoke layer having a large film thickness is formed on the main magnetic pole layer independently of the main magnetic pole. The main magnetic pole layer has a front end surface formed in a shape with a width size gradually increasing in a direction of track width as the front end surface departs farther away from an auxiliary magnetic pole layer. A perpendicular magnetic recording head can be provided which can suppress the occurrence of fringing in a recording pattern, and can form the main magnetic pole layer with high pattern accuracy, and can satisfactorily introduce a recording magnetic field to a fore end of the main magnetic pole layer.

In a rotor of a rotary-electric machine, in order to improve a cooling performance of a rotor winding, in a rotor winding on an end portion of the rotor in an axial direction, the rotor winding being held by a retaining ring of the rotor winding formed by laminating a plurality of conductors in slots of a rotor iron core extending in an axial direction and having a plurality of slots formed at predetermined intervals in a peripheral direction, ventilation channels through which cooling air flows are formed in the surfaces of the conductors along a longitudinal direction. The ventilation channels have air inlet holes which guide the cooling air and exhaust holes which exhaust the cooling air, the conductors provided with the ventilation channels which are formed in the surfaces of the conductors along the longitudinal direction and through which the cooling air flows are laminated to constitute the rotor winding, and the conductors include openings of the air inlet holes in bottoms of the conductors on a side opposite to a side on which the ventilation channels are formed.

Actuator having a drive element (16) which can be driven in reaction to electrical operation of a coil device (14), said drive element consisting of a magnetic shape-memory material and being designed to transmit mechanical drive energy to an actuating partner (28), wherein the drive element, which is in the form of an expansion unit (16) and is aligned such that it extends in a drive direction (22), is associated with a pair of laterally adjacent magnetic flux guide elements (18, 20) for a magnetic flux produced by the coil device, such that the magnetic flux is guided between the flux guide elements through the expansion unit and transversely with respect to the drive direction, the coil device (14) being provided such that it is circumferential around the expansion unit (16) which extends axially in the drive direction.

The present invention provides a high-voltage semiconductor device including a deep well, a first doped region disposed in the deep well, a high-voltage well, a second doped region disposed in the high-voltage well, a first gate structure disposed on the high-voltage well between the second doped region and the first doped region, a doped channel region disposed in the high-voltage region and in contact with the second doped region and the deep well, and a third doped region disposed in the high-voltage well. The high-voltage well has a first conductive type, and the deep well, the first doped region, the second doped region, the doped channel region, and the third doped region have a second conductive type different from the first conductive type.