36results about How to "Reflection coefficient" patented technology

A surface acoustic wave device includes a piezoelectric substrate made of LiNbO3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.

Dielectric-free, metal-only, dipole-coupled broadband radiating array aperture with wide field of view.

A surface acoustic wave device includes a piezoelectric substrate made of LiNbO3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.

A surface acoustic wave element includes: a diamond layer; an alumina nitride layer provided on the diamond layer; a silicon oxide layer provided on the alumina nitride layer; and a pair of electrodes provided between the alumina nitride layer and the silicon oxide layer, the electrodes applying a voltage to the alumina nitride layer. If a thickness of the alumina nitride layer is represented by H1, a thickness of the silicon oxide layer is represented by H2, a wavelength of a surface acoustic wave is represented by λ, x is defined as x=2πH1 / λ, and y is defined as y=2πH2 / λ, (x, y) meets all of the following formulas 1 to 4 below. That is, the formula 1 is y≦0.750×x+0.325; the formula 2 is y≦−0.300×x+1.690; the formula 3 is y≧−0.500×x+0.950; and the formula 4 is y≧0.700×x−0.610.

Systems, devices, and methods are disclosed for testing the boresight of a gimbaled camera and laser system, such as an infrared countermeasures (IRCM) system, in extreme environments. Light simulating a target is reflected through an optics system to the camera, with a portion of the light reflected back from a corner cube reflector through the optics system as a reference. A laser beam from the laser is received through the same optics system, and a position of the corner cube reflected reference and laser beam are compared in order to determine whether the camera and laser are properly aligned. A spherical shell adapted to position the camera at its geometric center keeps misaligned laser pulses from reflecting back into the camera.

In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

The invention relates to a substrate for use in a lithography system, said substrate being provided with an at least partially reflective position mark comprising an array of structures, the array extending along a longitudinal direction of the mark, characterized in that said structures are arranged for varying a reflection coefficient of the mark along the longitudinal direction, wherein said reflection coefficient is determined for a predetermined wavelength. In an embodiment a specular reflection coefficient varies along the substrate, wherein high order diffractions are substantially absorbed by the substrate. A position of a beam on a substrate can thus be determined based on the intensity of its reflection in the substrate. The invention further relates to a positioning device and lithography system for cooperation with the substrate, and a method of manufacture of the substrate.

The invention relates to a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system arranged for detecting a position mark on a surface.

Systems, devices, and methods are disclosed for testing the boresight of a gimbaled camera and laser system, such as an infrared countermeasures (IRCM) system, in extreme environments. Light simulating a target is reflected through an optics system to the camera, with a portion of the light reflected back from a corner cube reflector through the optics system as a reference. A laser beam from the laser is received through the same optics system, and a position of the corner cube reflected reference and laser beam are compared in order to determine whether the camera and laser are properly aligned. A spherical shell adapted to position the camera at its geometric center keeps misaligned laser pulses from reflecting back into the camera.

A surface acoustic wave device includes a ZnO dielectric thin film on a quartz substrate and an IDT electrode having strips between the ZnO thin film and the quartz substrate. The IDT electrode has at least one region where the strips are disposed at an interval defined by approximately a half-wavelength of the surface acoustic wave. The duty ratio of the IDT electrode is preferably more than about 0.5. Alternatively, a protrusion is formed via a slope in the region of the ZnO thin film where the IDT electrode is disposed, and the inclination angle θ of the slope is more than about 30°.

In a decoding section of a stacked barcode reader, the brightness values of multiple pixels configuring image data are used to calculate multiple line widths of the bars and the spaces of the stacked barcode. Based on the evaluation value of the frequency distribution of multiple line widths, a priority order of T-sequence is determined. According to this priority order, the T-sequence is measured and the code word corresponding to the T-sequence is obtained. With this, the priority order of the T-sequence is determined based on the evaluation value (such as the maximum value, variance, etc.) of the frequency distribution of the line widths of the bars and the spaces that configure the stacked barcode increasing reading performance of the barcode reader on a stacked barcode while reducing the number of errors in all the decoded code words, despite the level of the resolution of the image pickup optical system.

A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.

The invention relates to microwave technology and can be used in measuring technology and wireless communication. The technical result is a waveguide-to-microstrip transition which provides reduced signal transmission losses and increased working bandwidth together with a low wave reflection coefficient. A contacting metal layer is arranged on an upper surface of a dielectric circuit board around a micro-strip probe, without electrical contact with the micro-strip probe and a micro-strip transmission line and forming an internal area on the dielectric circuit boar being a waveguide channel area. A closed waveguide section having a slot in the area of the microstrip transmission line is arranged on the contacting metal layer. At least one metallized transition through-hole is formed along a perimeter around the area of the waveguide channel in the metal layers and in the dielectric circuit board, and at least one non-metallized through-hole is formed inside the waveguide channel area.

Disclosed are an antenna apparatus and a feeding structure thereof. The feeding structure includes at least one feeding unit; at least one ground unit connected to the feeding unit; and a ground member connected to the ground unit, and the antenna apparatus includes the feeding structure. Thus, a plurality of signal transferring paths is formed in the antenna apparatus so that the operation efficiency of the antenna apparatus is improved.

A multilayer radar-absorbing laminate includes three juxtaposed blocks.A first electrically conductive block is arranged toward the inside of the aircraft in use.A second electromagnetic intermediate absorber block has a layer of electrically non-conductive fiber sheets is permeated by graphene-based nanoplatelets to achieve a periodic and electromagnetically subresonant layer, the conductive layers containing graphene nanoplatelets alternating with non-conductive layers.A third block of electrically non-conductive material is arranged towards the outside and forms part of the outer surface of the aircraft. The second block is produced by depositing on the fiber sheets a suspension of graphene nanoplatelets in a polymeric mixture, with controlled penetration of the graphene nanoplatelets into the fiber sheets. A plurality of dry fiber sheets sprayed with the suspension of graphene nanoplatelets is superimposed. An unpolymerized thermosetting synthetic resin is infused into a lay-up made of the first, second and third blocks. Afterwards, the thermosetting resin is polymerized.

In an optical modulation device (10) having an electrical / optical interaction region (11), an electrical signal line (3) is connected to an electrical signal input terminal (2a), another electrical signal line (4a) is connected to an electrical signal output terminal (2b), and a reflection control circuit (5) is connected to the other electrical signal line (4a). This reflection control circuit (5) is an impedance element which positively reflects an output electrical signal from the interaction region (11) of the optical modulation device (10). This makes it possible to raise the upper-limiting frequency at which the E / O (Electrical-to-Optical) response characteristic can be improved, and improve the flatness of the frequency characteristic of the E / O response without deteriorating the absolute value of the E / O response.

A radial power combination system is provided. The system comprises a radial divider comprising ports in the form of rectangular waveguides on the periphery, a radial combiner superposed on the radial divider, comprising ports in the form of rectangular waveguides on the periphery, a first, input transition transmitting a first signal to the center of the radial divider, a second, output transition capturing the first signal amplified to the output of the radial combiner, at least two amplifying channels comprising a third, input transition capable of interacting with the guides, a fourth, output transition capable of interacting with the guides and at least one amplifier, and means for adjusting the positioning of the amplifying channels, thus making it possible to adjust the phase shift of the various channels.

In a decoding section of a stacked barcode reader, the brightness values of multiple pixels configuring image data are used to calculate multiple line widths of the bars and the spaces of the stacked barcode. Based on the evaluation value of the frequency distribution of multiple line widths, a priority order of T-sequence is determined. According to this priority order, the T-sequence is measured and the code word corresponding to the T-sequence is obtained. With this, the priority order of the T-sequence is determined based on the evaluation value (such as the maximum value, variance, etc.) of the frequency distribution of the line widths of the bars and the spaces that configure the stacked barcode increasing reading performance of the barcode reader on a stacked barcode while reducing the number of errors in all the decoded code words, despite the level of the resolution of the image pickup optical system.

The invention relates to a substrate for use in a lithography system, said substrate being provided with an at least partially reflective position mark comprising an array of structures, the array extending along a longitudinal direction of the mark, characterized in that said structures are arranged for varying a reflection coefficient of the mark along the longitudinal direction, wherein said reflection coefficient is determined for a predetermined wavelength. In an embodiment a specular reflection coefficient varies along the substrate, wherein high order diffractions are substantially absorbed by the substrate. A position of a beam on a substrate can thus be determined based on the intensity of its reflection in the substrate. The invention further relates to a positioning device and lithography system for cooperation with the substrate, and a method of manufacture of the substrate.

A surface acoustic wave device includes an electrode and a dielectric layer laminated on a piezoelectric substrate, in which the electrode includes a first electrode film containing Pt, Au, Ag, or Cu and a second electrode film containing Al, the normalized film thickness h / λ of the first electrode film is about 0.005 or more and at most about 0.015 in the case of Pt, the normalized film thickness h / λ of the Al film is about 0.06 or more and at most about 0.185, and the normalized film thickness h / λ of the dielectric layer is about 0.2 or less.

The invention discloses an average correlation orthogonal matching pursuit algorithm compressed sensing and belongs to the field of compressed sensing signal processing. According to the algorithm, the problem that the refactoring precision is low when the correlation degree between a last-time iteration residual and atoms in a measurement matrix is taken as a greedy algorithm for a standard of selecting atoms is solved. The invention provides an auxiliary method for selecting the atoms, namely, whether the atoms are selected or not is inspected through utilization of average values of correlations between a plurality of atoms and the residual, wherein the plurality of atoms have relatively high correlation with the atoms. According to the algorithm, the atoms are selected through comprehensive utilization of a traditional method of selecting the atoms according to the correlations between the atoms themselves and the residual, and the auxiliary method. Compared with the traditional greedy algorithm, the algorithm has a great advantage over aspects of an accurate refactoring probability and an average refactoring error, and the application of the compressed sensing in practice can be effectively improved.

A surface acoustic wave device includes a ZnO dielectric thin film on a quartz substrate and an IDT electrode having strips between the ZnO thin film and the quartz substrate. The IDT electrode has at least one region where the strips are disposed at an interval defined by approximately a half-wavelength of the surface acoustic wave. The duty ratio of the IDT electrode is preferably more than about 0.5. Alternatively, a protrusion is formed via a slope in the region of the ZnO thin film where the IDT electrode is disposed, and the inclination angle θ of the slope is more than about 30°.

An optical recording disk includes at least a recording layer containing an organic compound containing a porphyrin system dye as a primary component and a light transmission layer which transmits a laser beam having a wavelength of 390 to 420 nm on a support substrate in this order, the porphyrin system dye having a minimal value nmin of a refractive index n within a wavelength region of 390 nm to 420 nm and a refractive index n equal to or lower than 1.2 with respect to the laser beam having the wavelength of 390 to 420 nm and absorbing the laser beam having the wavelength of 390 to 420 nm to be melted or decomposed, whereby the refractive index thereof changes and data are recorded in the optical recording disk.According to the thus constituted optical recording disk, it is possible to record data therein using a bluish-violet laser beam having a wavelength of 390 to 420 nm and reproduce data therefrom using a bluish-violet laser beam having a wavelength of 390 to 420 nm.

A surface acoustic wave device including an SiO film has improved frequency temperature characteristics, prevents an increase in insertion loss, obtains a reflection coefficient of an electrode that is sufficiently high, and achieves more preferable resonant characteristics and filter characteristics. The surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in an upper surface thereof, an IDT electrode primarily composed of Pt provided in the grooves, a SiO2 layer arranged so as to cover the upper surface of the LiNbO3 substrate and the IDT electrode, a surface of the SiO2 layer is planarized, a response of a Rayleigh wave is utilized, and Euler angles of the LiNbO3 substrate are in a range of (0°±5°, 208° to 228°, 0°±5°).

The invention relates to a lighting device comprising a light source (1) that emits incoherent light with a total radiation power P and has a radiation-emitting area (S) divided into a plurality of subareas (Si), wherein assigned to each subarea (Si) is a light ray (2) having a radiation power Pi and the sum of the radiation powers Pi is equal to the total radiation power P, and disposed after said light source (1) is an optical element (4) having a decoupling surface (5) and a total reflection angle (θc) assigned to said decoupling surface (5), said decoupling surface (5) being shaped so that at least for a portion of said light rays (2) the angle (α) of incidence on said decoupling surface (5) is smaller than the total reflection angle (θc), and the radiation power of said light rays collectively is greater than a predetermined fraction, equal to at least 50%, of the total radiation power P.

A device for amplifying a laser beam along an axis comprises: an amplifying bar structure of index nc, delimited by a surface connecting the input and output faces of the structure, having a dimension e along the axis and Φ along a perpendicular direction, with e<Φ, and intended to be pumped to become a gain medium with a maximum along a face, and a liquid of index nA which surrounds the structure in relation to its surface and which is absorbent or scattering at the fluorescence wavelength of the amplifying bar structure. The surface comprises a first tooth in the form of a chamfer at its junction with the maximum gain face, to avoid causing parasitic transverse lasing and the liquid of index nA has a heat capacity of greater than 3000 Joules per kilogram per K° to dissipate the thermal power induced by the pumping.

The invention relates to a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system arranged for detecting a position mark on a surface.

A surface acoustic wave device including an SiO film has improved frequency temperature characteristics, prevents an increase in insertion loss, obtains a reflection coefficient of an electrode that is sufficiently high, and achieves more preferable resonant characteristics and filter characteristics. The surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in an upper surface thereof, an IDT electrode primarily composed of Pt provided in the grooves, a SiO2 layer arranged so as to cover the upper surface of the LiNbO3 substrate and the IDT electrode, a surface of the SiO2 layer is planarized, a response of a Rayleigh wave is utilized, and Euler angles of the LiNbO3 substrate are in a range of (0°±5°, 208° to 228°, 0°±5°).