143results about How to "Securing durability" patented technology

The lithium rechargeable battery of the present invention is provided with a current collector and an active material layer containing active material particles 10 supported on this current collector. The active material particles 10 are secondary particles 14 in which a plurality of primary particles 12 of a lithium transition metal oxide are aggregated, and have a hollow structure that contains a hollow section 16 formed inside the secondary particle 14 and a shell section 15 that surrounds the hollow section 16. A through hole 18 that penetrates from the outside to the hollow section 16 is formed in the secondary particle 14. The ratio (A/B) in a powder x-ray diffraction pattern of the active material particles 10, where A is the full width at half maximum of the diffraction peak obtained for the (003) plane and B is the full width at half maximum of the diffraction peak obtained for the (104) plane, satisfies the equation (A/B)≦0.7.

A method for manufacturing a golf club head composed of a metal main body and a non-flat metal face member which are welded each other is disclosed. In order to make the non-flat metal face member, an in-process face material is cut out from a rolled metal plate having a constant thickness. And a turnback is formed around the in-process face material by press working. Before making the press working, the region of the in-process face material corresponding to the turnback is decreased in the thickness by a cutting work.

A phase change memory device and a corresponding method of manufacturing the same is presented. The phase change memory device includes a silicon substrate, a first insulation layer, cell switching elements, heaters, a gate, a second insulation layer, a barrier layer, a phase change layer and top electrodes. The first insulation layer is in the cell region of the substrate and has a first holes. The cell switching elements are formed in the first holes. The heaters are formed on the cell switching elements. The gate is in the peripheral region of the substrate and is higher than the cell switching elements. The second insulation layer having second holes which expose the heaters, and is defined to expose a hard mask layer of the gate. The barrier layer is on sidewalls of the second holes and on the second insulation layer. The phase change layer is formed in and over the second holes in which the barrier layer is formed. The top electrodes are formed on the phase change layer.