The invention discloses a high-reliability fully-closed
CMOS image sensor structure and a production method thereof. The structure comprises an
image sensor chip, openings, a
metal wiring layer, a plurality of solder bumps and a plastic
package layer, wherein the openings are formed by extending from a second surface of the
chip to a first surface, and a
welding pad of the
chip is exposed out of the bottoms of the openings; the
metal wiring layer is positioned on the inner walls of the openings and the second surface of the
image sensor chip, and are electrically connected with the
welding pad, and the solder bumps are positioned on the second surface and are electrically connected with the
metal wiring layer; the image sensor chip is coated by the plastic
package layer, and an image
induction zone and the solder bumps are exposed. The chip is protected by forming the whole plastic
package layer, and the plastic package layer adopts a plastic package material with good
moisture insulation,
corrosion prevention or
mechanical strength properties. The high-reliability fully-closed
CMOS image sensor structure provided by the invention has the advantages of further enhancing the reliability and durability of the
CMOS image sensor, enhancing the anti-interference ability of the image sensor chip, and meeting the application requirements on the CMOS image sensor in harsh environments.