197results about "Capacitance correction" patented technology

An interdigital capacitor includes a semiconductor substrate, and a pair of comb-like electrodes formed on the semiconductor substrate. At least one of the pair of comb-like electrodes includes a cutting target portion.

A MEMS tunable capacitor with angular vertical comb-drive (AVC) actuators is described where high capacitances and a wide continuous tuning range is achieved in a compact space. The comb fingers rotate through a small vertical angle which allows a wider tuning range than in conventional lateral comb drive devices. Fabrication of the device is straightforward, and involves a single deep reactive ion etching step followed by release and out-of-plane assembly of the angular combs.

A capacitor including an expandable part fabricated on a capacitor housing is enclosed. The expandable part is expandable by a fault that occurs within the capacitor housing, thereby extending the capacitor housing to contact with an external interrupter. The external interrupter includes an external electrode and an external sensing circuit. The external sensing circuit detects a contact between the capacitor housing and the external electrode and sends a signal to disconnect the capacitor from an apparatus circuit.

The devices presented herein are capacitive sensors with single crystal silicon on all key stress points. Isolating trenches are formed by trench and refill forming dielectrically isolated conductive silicon electrodes for drive, sense and guards. For pressure sensing devices according to the invention, the pressure port is opposed to the electrical wire bond pads for ease of packaging. Dual-axis accelerometers measuring in plane acceleration and out of plane acceleration are also described. A third axis in plane is easy to achieve by duplicating and rotating the accelerometer 90 degrees about its out of plane axis Creating resonant structures, angular rate sensors, bolometers, and many other structures are possible with this process technology. Key advantages are hermeticity, vertical vias, vertical and horizontal gap capability, single crystal materials, wafer level packaging, small size, high performance and low cost.

A solid electrolytic capacitor comprising a capacitor element obtainable by compressing a porous valve-acting metal substrate having on the dielectric film surface thereof a solid electrolyte layer containing an electrically conducting polymer in the thickness direction, wherein assuming that the maximum thickness and the minimum thickness of the electrically conducting polymer layer including the substrate before the compression are Hamax and Hamin, and the maximum thickness and the minimum thickness of the electrically conducting polymer layer after the compression are Hbmax and Hbmin, the percentage decrease ΔH in the difference of thickness represented by the following formula is preferably from 5 to 95%: Formula (I). The thin solid electrolytic capacitor element of the present invention, which can be stably produced with a small variety in shape, enables fabrication of a solid electrolytic multilayer capacitor having a high-capacitance and small-size with a low height, which, free from short-circuit failure, exhibits stable performanceΔ⁢⁢H⁡(%)=[1-(Hb⁢⁢max-Hb⁢⁢min)(Ha⁢⁢max-Ha⁢⁢min)]×100.(I)

The present invention provides compliant / stretchable electroactive materials and devices made from those materials which exhibit fault-tolerant properties, i.e., self-healing / clearing properties. The present invention also provides systems, which incorporate the subject materials and / or devices, as well as methods of fabricating the subject materials and devices.

Dielectric elastomer or electroactive polymer film transducers configured to minimize high electrical field gradients that can lead to partial discharge and corona.

A device for varying the capacitance of an electronic circuit is disclosed. The device comprises a flexible membrane located above the electronic circuit, a metal layer connected to the flexible membrane, and bias circuitry located above the membrane. Variation of the capacitance of the electronic circuit is obtained by pulling the membrane upwards by means of the bias circuitry. The disclosed device provides a sizeable capacitance variation and high Q factor, resulting in overall low filter insertion loss. A nearly constant group delay over a wide operating bandwidth is also obtained.

Circuit modules, systems and devices for controlling voltages across capacitors.

A heat-sensitive apparatus includes a substrate with a top surface, one or more bars being rotatably joined to the surface and having bimorph portions, and a plate rotatably joined to the surface and substantially rigidly joined to the one or more bars. Each bimorph portion bends in response to being heated. The one or more bars and the plate are configured to cause the plate to move farther away from the top surface in response to the one or more bimorph portions being heated.