62results about "Graphene nanoribbons" patented technology

Disclosed is a ribbon of graphene less than 3 nm wide, more preferably less than 1 nm wide. In a more preferred embodiment, there are multiple ribbons of graphene each with a width of one of the following dimensions: the length of 2 phenyl rings fused together, the length of 3 phenyl rings fused together, the length of 4 phenyl rings fused together, and the length of 5 phenyl rings fused together. In another preferred embodiment the edges of the ribbons are parallel to each other. In another preferred embodiment, the ribbons have at least one arm chair edge and may have wider widths.The invention further comprises a method of making a ribbon of graphene comprising the steps of:a. placing one or more polyaromatic hydrocarbon (PAH) precursors on a substrate;b. applying UV light to the PAH until one or more intermolecular bonds are formed between adjacent PAH molecules; andc. applying heat to the PAH molecules to increase the number of intermolecular bonds that are formed to create a ribbon of graphene.The invention further comprises an electrical device structure having two or more ribbons of graphene in surface to surface contact with a non conductive substrate. Each of the ribbons has a width less than 3 nm and each of the ribbons has edges that are parallel to one another. In a preferred embodiment the ribbons comprise a channel in a Field Effect Transistor (FET).

The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating boron nitride nanomaterials having a controlled number of atomic layer(s).

Methods are provided for fabricating graphene nanoribbons. The methods rely on laser irradiation that is applied to a carbon nanotube film to unzip one or more carbon nanotubes of the carbon nanotube film. Graphene nanoribbons can be cross-linked via laser irradiation to form a graphene nanoribbon network.

The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).

Provided are graphene nanoribbons with controlled zig-zag edge and cove edge configuration and methods for preparing such graphene nanoribbons. The nanoribbons are selected from the following formulae.

A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.

A method of forming graphene nanostripes includes providing a substrate comprising at least one of copper foil or nickel foam and subjecting the substrate to a reduced pressure environment in a processing chamber. The method also includes providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas, flowing the methane gas and the 1,2-DCB into the processing chamber, and establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber. The partial pressure ratio is between 0 and 3. The method further includes generating a plasma, thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma, and growing the graphene nanostripes coupled to the at least a portion of the substrate.

The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating boron nitride nanomaterials having a controlled number of atomic layer(s).

A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.

A method for fabricating crystalline surface structures (4) on a template (1). The method comprises the steps of providing a template (1) into a reaction environment, wherein one or more elements (3) required for the formation of the crystalline surface structure (4) are contained within the template (1); heating the template (1) inside the reaction environment to increase the mobility of the element (3) within the template (1), and to increase the surface diffusion length of the element (3) on the template-environment interface; and activating the template (1) by altering the conditions within the reaction environment, to make the mobile element (3) slowly migrate towards the template-environment interface and to make the element (3) organize on the surface of the template (1) as a crystalline structure (4).

A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.