The invention relates to the technical field of
semiconductor detection, and provides a
semiconductor temperature
field detection method and device. The method comprises the following steps: carrying out point-by-point scanning on the surface of a
wafer to obtain
radiation information of each spatial position point on the surface of the
wafer; sequentially separating
radiation energy of different wavelengths according to the
radiation information of each spatial position point; generating radiation data of each spatial position point under a plurality of wavelengths based on the radiation energy of each
wavelength; coordinating the
time sequence of point-by-point scanning and separation of the radiation energy of each
wavelength, and enabling each spatial position point to be matched with the corresponding multi-
wavelength radiation data; and acquiring multi-wavelength radiation data, constructing a radiation equation set based on the multi-wavelength radiation data of the same spatial position point, and performing synchronous inversion calculation on the temperature value of each point on the surface of the
wafer according to the radiation equation set. The method is used in the
semiconductor manufacturing process, and self-adaptive and high-reliability non-contact detection which does not depend on
emissivity preset parameters is carried out on the surface temperature field.