The latest invention patents collect the data information of China invention patents from 2000 to 2024, typesetting according to the date of patent publication, including patent number, application date, invention Bibliographic data, abstracts, and specification data of people are convenient for scientific researchers to quickly browse and search for patents.
PendingCN111718105ASolve the situation of relatively large specific resistanceLow moisture content of mud cakeSludge treatment by oxidationWater contaminantsSludgeActive agent
InactiveCN104578085AReduce reactive powerMake up for the lack of capacityFlexible AC transmissionReactive power adjustment/elimination/compensationLow loadComputing systems
ActiveCN113549156ADoes not affect functionPermanent killPolypeptide with localisation/targeting motifImmunoglobulin superfamilySingle-Chain AntibodiesReceptor
ActiveCN1845632AAvoid co-channel interferenceGuaranteed switching success rateRadio/inductive link selection arrangementsNetwork planningElectrical and Electronics engineeringWireless signal
InactiveCN103050984ALow costReactance value adjustableTransformers/inductances coils/windings/connectionsConversion without intermediate conversion to dcLow voltageShunt reactor
PendingCN113987328AImprove the efficiency of answering questionsIncrease flexibilityDigital data information retrievalForecastingEngineeringQuestions and answers
ActiveCN101864709AEliminate or weaken the problem of CPIII point coordinate changeTroubleshootMeasurement devicesMeasuring apparatusLength variationContinuous beam
Owner:CHINA RAILWAY FIRST SURVEY & DESIGN INST GRP
InactiveCN111561475AImprove corrosion resistanceWith high temperature corrosion resistancePump componentsPumpsEnvironmental engineeringCirculating pump
ActiveCN107819067ALow costConducive to the promotion and application in the futureCurrent/voltage measurementGalvano-magnetic hall-effect devicesStrontium titanateLight spot
InactiveCN106410055ALower electron affinityDoes not significantly change material propertiesSolid-state devicesSemiconductor/solid-state device manufacturingHole injection layerQuantum dot
InactiveCN102230686AReduced temperature level requirementsLow temperature requirementFluid circulation arrangementAbsorption compressionLithium bromide