34results about How to "Avoid conductivity" patented technology

A conductive member of a paper feed roller for use in an electrophotographic apparatus is provided which retains electrical conductivity in an adequate range, is effectively prevented from deteriorating in durability, and is reduced in the voltage dependence of electrical resistance and in resistance unevenness. This conductive member enables satisfactory print quality to be obtained over long. The conductive member comprises:

• a conductive elastic layer formed from one or more elastic materials selected from the group consisting of rubbers, resins, and thermoplastic elastomers; and a coating layer formed by applying a surface-treating liquid to the outer surface of the conductive elastic layer and then thermally curing the coating. The surface-treating liquid comprises:
  • a medium containing, dispersed and/or dissolved therein, either a polyisocyanate compound or a combination of a polyol compound and an isocyanate compound; and carbon nanotubes dispersed in the medium.

An electric steering wheel lock device includes a control circuit that starts and stops supplying power to a motor that actuates a lock mechanism to lock and unlock a movable member of a vehicle steering mechanism. The control circuit changes contact states of first and second relays to switch a supplying direction of the power. A drive restriction unit stops and starts supplying power to a drive circuit for the motor. The control circuit changes contact states of the first and second relays when the drive restriction unit stops supplying power to the drive circuit.

A negative electrode for a battery has a collector, active material layer, and inorganic compound layer. The active material layer is formed on the collector. The inorganic compound layer is formed on the surface of the active material layer. The inorganic compound layer is expressed by general formula Li_xPT_yO_z or Li_xMO_yN_z. The compound composing the inorganic compound layer has lithium ion conductivity and excels in moisture resistance.

A semiconductor structure includes a top gate, an oxide semiconductor channel layer, a first dielectric layer, a second dielectric layer, a source and a drain. The oxide semiconductor channel layer is disposed between the top gate and a substrate. The first dielectric layer is disposed between the top gate and the oxide semiconductor channel layer. The second dielectric layer is disposed between the first dielectric layer and the oxide semiconductor channel layer. The source and the drain are disposed on two opposite sides of the oxide semiconductor channel layer and located between the first dielectric layer and the substrate. A portion of the oxide semiconductor channel layer is exposed between the source and the drain. A portion of the first dielectric layer and a portion of the second dielectric layer directly contact with and entirely cover the portion of the oxide semiconductor channel layer.

Provided are a ceria-based composition having an undoped or metal-doped ceria and an undoped or metal-doped bismuth oxide, wherein the undoped or metal-doped bismuth oxide is present in an amount equal to or more than about 10 wt % and less than about 50 wt % based on the total weight of the ceria-based composition, and at least one selected from the ceria and the bismuth oxide is metal-doped. The ceria-based composition may ensure high sintering density even at a temperature significantly lower than the known sintering temperature of about 1400° C., i.e., for example at a temperature of about 1000° C. or lower, and increase ion conductivity as well.

The invention disclosed a method of manufacturing the thin film, which belongs to the technological field of SOI wafer manufacture. By growing a layer of dielectric material (silicon oxide) on the provided high-resistivity silicon wafer, then to grow a layer of amorphous silicon on the dielectric material, to transfer a layer of silicon oxide to the amorphous silicon, to make the mono crystalline silicon exist on the oxidation layer, so that a SOI wafer with a layer of amorphous silicon is manufactured. The process above is completed in specific process conditions. The manufactured thin film, e.g. SOI wafer with amorphous silicon layer, is used main for RF apparatus.

A non-aqueous electrolyte secondary battery including a positive electrode having a positive electrode mixture layer containing a positive electrode active material, a binder, and a conductive agent, and a negative electrode having a negative electrode active material capable of intercalating and deintercalating lithium. The positive electrode active material includes a layered lithium-transition metal composite oxide represented by the compositional formula Li_aNi_xM_(1-x)O₂ where 0<a≦1.1, 0.5<X≦1.0, and M is at least one element. The binder contains a fluororesin and a nitrile-based polymer. The amount of the nitrile-based polymer is 40 mass % or less with respect to the total amount of the binder.

The present invention is concerned with a building system comprising i) at least first and second hollow blocks each having at least one side wall, and at least two end walls extending in at least one common direction, at least one of the walls in each block having a given thickness and being provided with a first cut-out extending throughout said wall thickness at a first free end of said wall, and ii) at least one connector element defining a cylindrical hollow body having a shape and size conforming with a perimeter corresponding to a juxtaposition of said first and second cut-outs for snug engagement within the perimeter, and at least one first flange projecting from a first end of the body and at least one second flange projecting from a second end of the body, said first and second flanges defining an intermediate spacing substantially equal to twice the value of said thickness. Thereby, the first block can be connected to the second block for erecting structures by registering cut-outs of adjacent walls against each other and connecting said adjacent walls together by snugly positioning the connector element in the cut-outs with first and second flanges abutting respectively on inner faces of each of the adjacent walls.

The present invention addresses the treatment of age-related macular degeneration using regulation of pathogenic mechanisms similar to atherosclerosis. In further specific embodiments, compositions that increase reverse cholesterol transport are utilized as therapeutic targets for age-related macular degeneration. In a specific embodiment, the lipid content of the retinal pigment epithelium, and/or Bruch's membrane is reduced by delivering Apolipoprotein A1, particularly a mimetic peptide.

This invention relates to a polymer having a chain structure of a repeating unit of a proton-conducting compound which causes an electrochemical redox reaction in a solution of a proton source to act as an electrode active material, and a heterocyclic compound structure; and an electrochemical cell comprising the polymer as an electrode active material.

The present invention relates to a use of a polymer composition preferably in electrical devices as well as to a cable surrounded by at least one layer including the polymer composition.

A negative electrode material for a lithium ion battery comprises a carbon material, a silicon nanomaterial, and a first solvent. The carbon material comprises carbon nanotubes. The carbon material and the silicon nanomaterial are uniformly mixed in the first solvent. The weight percentage of the silicon nanomaterial is between 1% and 30%, and the amount of the carbon material is 1% to 30% of the amount of the silicon nanomaterial. A negative electrode composite slurry for a lithium ion battery comprises the negative electrode material and a graphite mixture material. The graphite mixture material comprises graphite and a second solvent. The graphite is uniformly mixed in the second solvent, and the weight percentage of the graphite is between 20% and 40%.

A first conductive film is formed on a wiring pattern area on a plate by dropping liquid drops. A second conductive film which is electrically separated from the first conductive film is formed by discharging liquid drops outside of the wiring pattern area on the plate.

It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved.

A polymer electrolyte membrane is provided with a cation exchange resin and a mineral additive including an exfoliated layered silicic acid-based clay. The polymer electrolyte membrane includes the nano-sized exfoliated mineral additive dispersed in the polymer electrolyte membrane, and thereby fuel cross-over can be effectively suppressed by the small amount of mineral additive while maintaining excellent ion conductivity and mechanical properties.

To provide a cooling apparatus that restrains a rise in conductivity of a cooling medium. A cooling apparatus for a fuel cell includes cooling piping through which a cooling medium for cooling the fuel cell flows, a conductivity measuring unit measuring a conductivity of the cooling medium that flows through the cooling piping, a conductivity reducing agent supply unit supplying the cooling piping with a conductivity reducing agent for reducing the conductivity of the cooling medium, and a control unit controlling the conductivity reducing agent supply unit in accordance with a value of the measured conductivity.

An electronic device free from variation of conductivity is provided. The electronic device 100 includes electrodes 2 and 3; and a metal conductor thin film 7 electrically connected to the electrodes 2 and 3. The metal conductor thin film 7 includes a metal conductor portion 1 that bridges a gap between the electrodes 2 and 3. The bridge length L of the metal conductor portion 1 is not more than a mean free path Λ of electron in the metal conductor portion 1 at the operation temperature of the electronic device 1. The electronic device 100 is formed by forming the electrodes 2 and 3 on the substrate 8 with a gap having the bridge length L; forming a support 4 that includes at least one selected from the group consisting of a nano-tube and a nano-wire and bridges a gap between the electrodes 2 and 3; and forming the metal conductor portion 1 by depositing the metal conductor thin film 7 on the support 4, and the electrodes 2 and 3.