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115results about How to "Boost voltage" patented technology

Word line voltage boosting circuit and a memory array incorporating same

A first embodiment of a word line voltage boosting circuit for use with an array of non-volatile memory cells has a capacitor, having two ends, connected to the word line. One end of the capacitor is electrically connected to the word line. The other end of the capacitor is electrically connected to a first voltage source. The word line is also connected through a switch to a second source voltage source. A sequencing circuit activates the switch such that the word line is connected to the second voltage source, and the other end of the capacitor is not connected to the first voltage source. Then the sequencing circuit causes the switch to disconnect the word line from the second voltage source, and connect the second end of the capacitor to the first voltage source. The alternate switching of the connection boosts the voltage on the word line. In a second embodiment, a first word line is electrically connected to a first switch to a first voltage source. An adjacent word line, capacitively coupled to the first word line, is electrically connected to a second switch to a second voltage source. A sequencing circuit activates the first switch and the second switch such that the first word line is connected to the first voltage source, and the second word line is disconnected from the second voltage source. Then the sequencing circuit causes the first switch to disconnect the first word line from the first voltage source, and causes the second word line to be electrically connected to the second voltage source. The alternate switching of the connection boosts the voltage on the first word line, caused by its capacitive coupling to the second word line. A boosted voltage on the word line may be used to improve cycling and yield, where the memory cells of the array are of the floating gate type and erase through the mechanism of Fowler-Nordheim tunneling from the floating gate to a control gate which is connected to the word line.
Owner:SILICON STORAGE TECHNOLOGY

Charge-pump circuit

The invention describes a charge-pump circuit (1, 1′) comprising a supply voltage input node (10) for applying an input voltage (Uin) to be boosted, a boosted voltage output node (11) for outputting a boosted voltage (Uout), and a plurality of transistor stages connected in series between the supply voltage input node (10) and the boosted voltage output node (11), wherein at least one transistor stage comprises a multiple-gate transistor (D1, . . . , D5), which transistor (D1, . . . , D5) comprises at least two gates, of which one is a first gate (G) for switching the transistor (D1, . . . , D5) on or off according to a voltage applied to the first gate (G), and one is an additional second gate (Gi) for controlling the threshold voltage of the multiple-gate transistor (D1, . . . , D5), independently of the first gate (G), according to a control voltage (Φ1, Φ2) applied to the second gate (Gi). The invention further describes a method of boosting a voltage using a charge-pump circuit (1, 1′) comprising a plurality of transistor stages connected in series between a supply voltage input node (10) and a boosted voltage output node (11), wherein at least one transistor stage comprises a multiple-gate transistor (D1, . . . , D5), which method comprises applying an input voltage (Uin) to be boosted at the supply voltage input node (10); applying a control voltage, (Φ1, Φ2) to the second gate (Gi) of the multiple-gate transistor (D1, . . . , D5) to control the threshold voltage of the multiple-gate transistor (D1, . . . , D5); and outputting the boosted voltage (Uout) at the voltage output node (11).
Owner:NXP BV
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