35 results about "Voltage dependency" patented technology

Certain 1-aminoalkylcyclohexanes are systemically-active uncompetitive NMDA receptor antagonists having rapid blocking/unblocking kinetics and strong voltage-dependency and are therefore useful in the alleviation of conditions resulting from disturbances of glutamatergic transmission giving them a wide range of utility in the treatment of CNS disorders involving the same, as well as in non-NMDA indications, due to their immunomodulatory, antimalarial, anti-Borna virus, and anti-Hepatitis C activities and utilities. Pharmaceutical compositions thereof and a method-of-treating conditions which are alleviated by the employment of an NMDA receptor antagonist, as well as the aforementioned non-NMDA indications, and a method for the preparation of the active 1-aminoalkylcyclohexane compounds involved.

In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.

The present invention provides a band gap type reference voltage generating circuit and a semiconductor integrated circuit having the same, capable of generating a reference voltage of about 1.2V or less whose temperature dependency is low, and realizing reduced offset voltage dependency of a differential amplifier. A band gap part has: a first resistor and a first bipolar transistor connected in series between power supply voltage terminals; a second resistor, a second bipolar transistor, and a third resistor connected in series between the power supply voltage terminals; and a differential amplifier that receives voltages generated by the first and second resistors, and an output of the differential amplifier is applied to the bases of the two transistors. The output part has a third bipolar transistor having a base to which the output of the differential amplifier is applied, a fourth resistor connected in series with the third bipolar transistor, a current mirror circuit for transferring current flowing in the third bipolar transistor, and a fifth resistor and a diode for converting the transferred current to voltage.

A portable Static Electro Magnetic Field (SEMF) generating device and method for the therapeutic treatment of inflammatory and painful disorders of the human limbs including fingers, hands, wrists, forearms, elbows, toes, feet and ankles preferably includes a wearable, portable battery powered solenoid or coil. The coil is configured to focus a substantially time invariant magnetic flux field onto a selected part of the body. The SEMF generating device's coil, when energized, works by slightly changing the charges associated with voltage-dependant ion channels in the cell membranes of the human body, thereby stabilizing abnormal fluid transport into the cells through aquaporin channels and the sodium ions relating to them, treating inflammation and altering the flow of calcium, chloride and potassium ions through their respective neuronal ion channels and treating pain.

An inverter type delay circuit, voltage-controlled oscillation circuit, and voltage-controlled delay circuit capable of realizing simplification of circuit configuration, reduction of an effect of power source noise, and reduction of jitter, wherein a delay circuit, voltage-controlled oscillation circuit, and voltage-controlled delay circuit comprised of a plurality of delay stages controlled in drive current in accordance with a bias voltage or a control voltage and determined in delay time by the drive current, adding a change of a power source voltage to the above bias voltage or control voltage by a predetermined ratio and supplying a result of the addition to the above delay stages to suppress the power source voltage dependencies of the delay times of the delay stages, or connecting by a predetermined ratio a plurality of delay stages having different power source voltage dependencies, for example, power source voltage dependencies of opposite delay times, to suppress the power source voltage dependencies of delay times of the delay stages are realized.

The technique of preparing a semiconductive rubber by adding a conductivity imparting agent to resin matrix is so general but controlling the exhibiting conductive properties to a semiconductive range is difficult and in the technique of imparting conductivity by using an electronic conductive agent such as carbon black, uniform dispersion within the system is difficult and this often causes the problems of the sample fluctuation of the electric properties and voltage dependency of the obtained semiconductive rubber. The semiconductive resin composition of the present invention comprises (A) an oxyalkylene polymer having at least one hydrosilylizable alkenyl group in each molecule, (B) a compound having at least two hydrosilyl groups in each molecule, (C) a hydrosilylizing catalyst, and (D) an ionic conductivity imparting agent or (E) a nonionic surfactant. The present invention also provides a semiconductive member having an extremely small fluctuation of resistance due to voltage applied and environment and small change in resistance due to continuous use, which is suitable for electrophotographic devices. The semiconductive member of the present invention comprises a metallic supporting member, a semiconductive elastic layer formed around the exterior of the metallic supporting member and at least one surface layer formed around the exterior of the semiconductive elastic layer, wherein the member has a specific resistance and resistance ratio.

The electrochemical capacitor of the invention comprises a nonaqueous electrolyte and a pair of polarizable electrodes, wherein carbon nanotubes are used as an electrode material for at least one of the positive electrode and the negative electrode, the carbon nanotubes have a specific surface area of at least 700 m²/g and contain semiconductive carbon nanotubes, and the electrode material exhibits a voltage dependency of differential capacity by electrochemical doping.

The electrochemical capacitor solves the problems with activated carbon electrodes and, exploiting the excellent characteristics of carbon nanotubes, has further increased capacitance and increased energy density, therefore realizing a reduced internal resistance and a prolonged service life.

A resonator that can alleviate restrictions in usage and design due to the bias voltage dependency and for which usage and design conditions can be easily determined. The resonator comprises a fixed electrode, a movable electrode opposite and sandwiching the fixed electrode, and an extension of the fixed electrode or the movable electrode that extends along a plane crossing the opposite surfaces of the fixed electrode and the movable electrode. With being displaced vertically relative to the fixed electrode, the movable electrode is vibrated.

In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.

A system and method are provided to regulate resistance in a discontinuous time hot-wire anemometer. The solution removes supply voltage dependency on the mass airflow output signal. Operating the hot-wire anemometer using discontinuous time regulation offers lower system power, but introduces an inverse supply dependent term in the associated transfer function. This effect is removed by multiplying the output signal via a supply dependent signal.

In a selection period for applying a selection voltage to a scanning strip, a high impedance section for placing a data strip in a high impedance state is provided after a constant current section for supplying a constant current to a data strip from a constant current circuit. An organic electroluminescent element to be used has a small voltage-dependency in luminous efficiencies. When performing grayshade display by PWM, a data strip is supplied with an amount of electric charges from the constant current circuit in the constant current section, the amount of electric charges being calculated by adding an amount of residual electric charges in pixels to an amount of electric charges corresponding to luminance required for respective gray scale levels, the amount of residual electric charges being found based on an estimated potential at the data strip at end of the high impedance section.

The present invention relates to crystallized forms of a voltage dependent calcium channel β subunit functional core, methods of producing and methods of utilizing the same.

Provided herein are methods of modulating membrane potential of a cell membrane using self-assembling compounds. Also provided herein are methods of regulating a natural voltage-dependent ion channel in a cell membrane using the self-assembling compounds disclosed herein. Further provided herein are methods of treating, preventing and /or managing a disease that is related to the abnormal membrane potential responses by using the self-assembling compounds disclosed herein.

An object of the present invention is to provide a screening system that targets ion channels and has superior efficiency. The present invention provides a material for screening for compounds that act on a target ion channel, comprising cells which retain at least one first DNA encoding a voltage-dependent Na ion channel that has been inhibited from being inactivated, and in which a K ion channel has been activated so that a resting membrane potential becomes deeper in a negative direction.

The present invention decreases the voltage dependency of a semiconductor resistance element used in a resistance voltage dividing circuit thus preventing the deterioration of display quality of a display image and, at the same time, realizing the reduction of power consumption. In a display device which includes a display element and a drive circuit which drives the display element, the drive circuit includes a semiconductor resistance element, the semiconductor resistance element includes a first conductive impurity region and a second conductive impurity region which is embedded in the first conductive impurity region and functions as a resistance element, the second conductive impurity region includes a first electrode and a second electrode, and a voltage which is applied to the first electrode or the second electrode of the second conductive impurity region is applied to the first conductive impurity region.

A dielectric ceramic composition comprising as main components barium titanate and a component M (wherein M is at least one type of component selected from manganese oxide, iron oxide, cobalt oxide, and nickel oxide) and having a ferroelectric phase region, wherein the concentration of the component M in the ferroelectric phase region changes from the outside toward the center. The concentration of the component M in the ferroelectric phase region is higher at the outside compared with near the center of the ferroelectric phase region. It is possible to realize a multi-layer capacitor which can satisfy both of the X7R characteristic (EIA standard) and B characteristic (EIAJ standard) of the temperature characteristic of the electrostatic capacity, has little voltage dependency of the electrostatic capacity and the insulation resistance, is superior in insulation breakdown resistance, and can use Ni or a Ni alloy as the internal electrode layer.