36results about How to "Provide immunity" patented technology

Catheter systems include direction-sensitive, multi-polar tip electrode assemblies for electroporation-mediated therapy, electroporation-induced primary necrosis therapy and electric field-induced apoptosis therapy, including configurations for producing narrow, linear lesions as well as distributed, wide area lesions. A monitoring system for electroporation therapy includes a mechanism for delivering electrochromic dyes to a tissue site as well as a fiber optic arrangement to optically monitor the progress of the therapy as well as to confirm success post-therapy. A fiber optic temperature sensing electrode catheter includes a tip electrode having a cavity whose inner surface is impregnated or coated with thermochromic / thermotropic material that changes color with changes in temperature. An optic fiber / detector arrangement monitors the thermochromic or thermotropic materials, acquiring a light signal and generating an output signal indicative of the spectrum of the light signal. An analyzer determines an electrode temperature based on the detector output and predetermined spectrum versus temperature calibration data.

A device for hardening an Ethernet switch is disclosed. The device provides cooling for the switch, and, suppresses electrical transients and electromagnetic interference, which could affect the power supply, and data transmission of the Ethernet switch. Using this device, the Ethernet switch can be used in harsh industrial environments, such as those present in power utility substations. The Ethernet switch may comprise a dual stage isolated power supply. The dual stage isolated power supply has a first DC to DC converter for converting received power from the received voltage to an intermediate voltage. The intermediate voltage is then further converted to a voltage which can be used by the Ethernet switch. Each of the DC to DC converters also provide galvanic isolation and also transient suppression and electromagnetic interference filtering to decrease adverse electrical effects which may be inherent in the power received from an external source. The first and second DC to DC converter provides a first level of galvanic isolation which is greater than the second level of galvanic isolation provided by the second DC to DC converter. The power supply circuit can be used in an Ethernet switch as well as any other intelligent electronic device.

Brushless Multiphase Self-Commutation Control (or BMSCC), also known as Real Time Emulation Control (or RTLC), is a contact-less means for powering any electric apparatus with “conditioned” or “re-fabricated” multiphase electrical excitation that is synchronized to the movement of the electric apparatus. BMSCC inherently phase-locks the frequency of excitation to any speed or position of the electric apparatus being controlled by a natural electromagnetic processing means and as a result, the BMSCC is an Electromagnetic Self-Commutator. BMSCC should never be confused with any derivative of Field Oriented Control, which is the other means of conditioning speed-synchronized electrical excitation by iteratively performing “speed-variant-to-speed-invariant” transformations and frequency synthesis by the unnatural processing means of an electronic computer. The control flexibility of BMSCC realizes additional synergistic or complementary electric apparatus inventions as shown in the illustration.

A bipolar transistor in a monocrystalline semiconductor substrate (101), which has a first conductivity type and includes a surface layer (102) of the opposite conductivity type. The transistor comprises an emitter contact (110) on the surface layer; a base contact (130 and 131) extending through a substantial portion (141) of the surface layer, spaced apart (140a) from the emitter; an insulator region (150 / 151) buried under the base contact; a collector contact (120); and a first polycrystalline semiconductor region (152 / 153) selectively located under the insulator region, and a second polycrystalline semiconductor region (154) selectively located under the collector contact. These polycrystalline regions exhibit heavy dopant concentrations of the first conductivity type; consequently, they lower the collector resistance.