The invention discloses a CMOS (complementary metal-oxide semiconductor) infrared detector reading-out circuit capable of realizing element-by-elementdark current suppression. The CMOS infrared detector reading-out circuit comprises input circuit, an integration circuit and an output circuit, the input circuit is of a structure combining current storage units with current mirrors, the current storage units are distributed in each pixel of a linear array circuit, each current storage unit is composed of a transmission gate, a virtual switch pair and a capacitance coupling loop, and customized modulation of dark current can be realized; the current mirrors are arranged at the left end and right end of the linear array circuit, and integral suppression of dark current can be realized. The CMOS infrared detector reading-out circuit has the advantages that the current storage units at an input end are designed, so that detector signal heterogeneity can be lowered effectively; the current mirrors at the input end are provided with a rough tuning port and a fine tuning port, so that scope of application, to medium-long-wave infrared detector working current, of the CMOS infrared detector reading-out circuit is expanded, and working state of a system can be adjusted accurately; the CMOS infrared detector reading-out circuit is low in power consumption, and is manufactured by adopting a submicron CMOS process, thereby being high in repeatability.