The invention discloses an integrated
semiconductor laser of a 2-
micrometer single-mode high-power GaSb-based
metal grating master oscillator power
amplifier and a fabrication method of the integrated
semiconductor laser. The
semiconductor laser comprises a substrate, an epitaxial structure, a
gain amplification region, a
master oscillator region, a
metal grating region and light limitation grooves, wherein the epitaxial structure is grown on the substrate and comprises an N-type lower
contact layer, an N-type lower limitation layer, a lower
waveguide layer, an active region, an upper
waveguide layer, a P-type upper limitation layer and a P-type upper
contact layer from bottom to top, the
gain amplification region is arranged at the front part, namely an emergent light part of the semiconductor laser and is of an
isosceles trapezoid structure formed by downwards
etching the P-type upper
contact layer, the
master oscillator region is arranged at the rear part of the
gain amplification region and is of a ridged
waveguide structure formed by downwards
etching the P-type upper contact layer and the P-type upper limitation layer, the
metal grating region is arranged at the rear part of the master oscillator region and is of a
periodic grating structure formed on the surface of the upper waveguide layer, the light limitation grooves are symmetrically arranged at the two sides of ridged waveguide structure, and the light limitation grooves and the ridged waveguide structure are arranged in an inclining manner.