The invention provides a method for manufacturing the structure of a
semiconductor device, which comprises the steps of: providing a front-end device layer structure, wherein the front-end device layer structure is provided with liners and grid
electrode structures positioned above the liners, the liner at two sides of each grid
electrode structure is internally provided with active regions, the surface of the liner is sequentially provided with an
etching stopping layer, an interlayer medium layer and a patterned
mask film layer, the patterned
mask film layer is provided with a first opening which correspondingly needs to manufacture a
bit line contact hole, and the surface of the interlayer medium layer is exposed out of the first opening; firstly
etching the interlayer medium
layers under the first openings by the means that the patterned
mask film
layers are taken as mask films, and secondly
etching the residual interlayer medium
layers, so that the interlayer medium layers are wholly removed, and the active regions and the etching stopping layers above the grid
electrode structures are exposed; and thirdly etching the exposed etching stopping layers, so that the exposed etching stopping layers are wholly removed, and the
bit line contact holes are formed. The method guarantees the contact holes to have ideal appearance outlines.