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Group lll nitride semiconductor light-emitting device

InactiveUS20110240957A1Improve performanceIncrease in drive voltageSemiconductor devicesVoltageSuperlattice
The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance without increasing driving voltage. The Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an InyGa1-yN (0<y<1) layer, an AlxGa1-xN (0<x<1) layer, and a GaN layer. The AlxGa1-xN (0<x<1) layer has such a thickness that electrons tunnel through the AlxGa1-xN layer and holes are confined in the light-emitting layer.
Owner:TOYODA GOSEI CO LTD

Separator, method for producing the same and electrochemical device including the same

A separator includes a porous substrate, a porous organic-inorganic coating layer formed on at least one surface of the porous substrate, and an organic coating layer formed on the surface of the organic-inorganic coating layer. The porous organic-inorganic coating layer includes a mixture of inorganic particles and a first binder polymer. The first binder polymer contains a copolymer including (a) a first monomer unit including either at least one amine group or at least one amide group or both in the side chain thereof and (b) a (meth)acrylate having a C1-C14 alkyl group as a second monomer unit. The organic coating layer is formed by dispersing a second binder polymer on the surface of the organic-inorganic coating layer, leaving scattered uncoated areas.
Owner:TORAY BATTERY SEPARATOR FILM +1
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