The invention discloses a GaN power device structure, and a
junction temperature testing device comprises an N-type
SiC substrate, the upper end of the N-type
SiC substrate is provided with a buffer layer,
metal is deposited at the upper end of the buffer layer to form a drain
metal layer, the upper end of the drain
metal layer is provided with a conduction layer formed by a highly doped N-type GaN layer, and the upper end of the conduction layer is provided with an N-type GaN layer. The upper end of the conduction layer is provided with a drift region formed by a lightly doped N-type GaN layer, the drift region is internally provided with alternately arranged P-type GaN
layers, the lower ends of the P-type GaN
layers are in contact with the conduction layer, the upper end of the drift region is provided with a
blocking layer formed by the P-type GaN
layers, the upper end of the
blocking layer is provided with a source
electrode contact layer formed by a highly doped N-type GaN layer, and the upper end of the source
electrode contact layer is provided with an N-type GaN layer. The upper end of the source
electrode contact layer is etched downwards to form a groove, an insulating layer is arranged in the groove, the upper end of the insulating layer is deposited to form a grid electrode, and metal is deposited at the upper end of the source
electrode contact layer to form a source electrode. According to the invention, the
breakdown voltage can be effectively improved, the device works stably under higher
voltage, the temperature rise during working of the device is reduced, and the service life of the device is prolonged.