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61results about How to "Manufactured small" patented technology

Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method

InactiveUS20010016399A1Improve efficiencyFacilitates small geometry manufactureTransistorSolid-state devicesLattice defectsSemiconductor materials
In a method for forming a bonded semiconductor-on-insulator substrate for the fabrication of semiconductor devices and integrated circuits, a surface of a wafer of a monocrystalline semiconductor material is implanted with ions of the semiconductor material a to a selected depth in the wafer to form, adjacent to the surface, an amorphous layer of the semiconductor material. The layer of amorphous semiconductor material extends to a substantially planar zone disposed at substantially the selected depth and comprising the monocrystalline semiconductor material damaged by lattice defects, i.e., end-of-range implant damage. Undamaged material below the selected depth comprises a first layer of the monocrystalline semiconductor material. The wafer is heated under conditions effective to convert the amorphous layer to a second layer of the monocrystalline semiconductor material and to coalesce the zone of damaged monocrystalline semiconductor material, thereby forming a substantially planar intrinsic gettering zone of substantially pure semiconductor material that includes active gettering sites disposed at substantially the selected depth. An insulating bond layer on one surface of a handle wafer is bonded to the surface of the wafer to form a bonded semiconductor-on-insulator substrate comprising a handle wafer, an insulating bond layer, and a device wafer of monocrystalline semiconductor material. The device wafer includes a substantially planar intrinsic gettering zone comprising substantially pure semiconductor material and including active gettering sites. The described bonded substrate is employed in the fabrication of semiconductor devices and integrated circuits.
Owner:INTERSIL INC

Electrical system, especially a microelectronic or microelectromechanical high frequency system

An electrical component is proposed, in particular a high-frequency microelectronic or microelectromechanical component having a base element that is provided with a feedthrough, a first conductive structure extending on an upper side of the base element being connected by the feedthrough, continuously for high-frequency electromagnetic waves, to a second conductive structure extending on a lower side of the base element. The feedthrough has the form of a right prism or cylinder, and the first and / or the second conductive structure is embodied as a planar waveguide, in particular as a coplanar waveguide. Also proposed is a method for producing an electrical component having a feedthrough for high-frequency electromagnetic waves through a base element, an electrically conductive layer being applied on an upper side of the base element and an etching mask being applied on a lower side of the base element; a trench, having at least almost perpendicular sidewalls and penetrating through the base element, then being etched into the base element in a plasma etching step; an electrically conductive layer being applied on the lower side after the etching and after removal of the etching mask; and the trench lastly being filled or lined with an electrically conductive material.
Owner:ROBERT BOSCH GMBH
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