The invention discloses a Raman characterization method of corrosion stress of an alpha surface GaN epitaxial layer film. The Raman characterization method comprises the following steps of 1, cleaning the surface of an alpha surface GaN epitaxial layer film, 2, carrying out a Raman scattering test on the alpha surface GaN epitaxial layer film to obtain a frequency shift value of an uncorroded E2 phonon mode, 3, carrying out a KOH solution corrosion test and decontamination treatment on the alpha surface GaN epitaxial layer film, and carrying out a Raman scattering test on the corroded alpha surface GaN epitaxial layer film to obtain a frequency shift value of a corroded E2 phonon mode, and 4, according to an offset delta E2 which is the difference of the frequency shift value of the corroded E2 phonon mode of the alpha surface GaN epitaxial layer film and the frequency shift value of the uncorroded E2 phonon mode of the alpha surface GaN epitaxial layer film, calculating corrosion stress of the alpha surface GaN epitaxial layer film by a formula of sigma xx=delta E2/k, wherein k is a constant. Through adopting two Raman scattering tests on an alpha surface GaN epitaxial layer filmbefore and after the corrosion, the Raman characterization method eliminates the influence from a substrate on alpha surface GaN epitaxial layer film stress, wherein when a conventional Raman characterization method is adopted, the influence exists. Through the Raman characterization method, calculated corrosion stress of an alpha surface GaN epitaxial layer film has a small error. Therefore, theRaman characterization method can be utilized for characterization of corrosion stress of alpha surface GaN epitaxial layer films having different structures.