53 results about "Device Age" patented technology

An electroluminescent (EL) device including an illumination area having one or more primary EL emitters; a reference area having a reference EL emitter; a reference driver circuit for causing the reference EL emitter to emit light while the EL device is active; a sensor for detecting light emitted by the reference EL emitter; and a measurement unit for detecting an aging-related electrical parameter of the reference EL emitter while it is emitting light. The device further includes a controller for receiving an input signal for each primary EL emitter in the illumination area, forming a corrected input signal from each input signal using the detected light and the aging-related electrical parameter, and applying the corrected input signals to the respective primary EL emitters in the illumination area.

The present invention is directed to a number of improvements in methods for hot-carrier device degradation modeling and extraction. Several improvements are presented for the improvement of building device degradation models, including allowing the user to select a device parameter used to build the device degradation model independent of the device parameter selected. The user can also select the functional relation between stress time and degradation level. To further improve accuracy, multiple acceleration parameters can be used to account for different regions of the degradation process. Analytical functions may be used to represent aged device model parameters, either directly or by fitting measured device parameters versus device age values, allowing devices with different age values to share the same device model. The concept of binning is extended to include device degradation. In addition to a binning based on device width and length, age is added. In an exemplary embodiment, only devices with minimum channel length have degraded models constructed. The present invention also allows the degradation of one device parameter to be determined based on an age value derived from another parameter. In yet another aspect, a degraded device is modeled as a fresh device with a voltage source connected to a terminal.

Compensating for changes in the threshold voltage of the drive transistor of an OLED drive circuit, the drive transistor includes a first electrode, second electrode, and gate electrode; connecting a first voltage source to the first electrode, and an OLED device to the second electrode and to a second voltage source; providing a test voltage to the gate electrode and connecting to the OLED drive circuit a test circuit that includes an adjustable current mirror causing voltage applied to the current mirror to be at a first test level; providing a test voltage to the gate electrode of the drive transistor and connecting the test circuit to the OLED device producing a second test level after the drive transistor and the OLED device age; and using the first and second test levels to calculate changes in the voltage applied to the gate electrode to compensate for drive transistor aging.

A novel technique to improve and extend endurance and reliability of a memory device utilizing multi-level cells is disclosed. As a memory device ages, it's reliability deteriorates. Prior to the memory device becoming completely unreliable, the memory device transitions from a multi-level cell operating mode to a reduced capacity operating mode. When operating in the multi-level cell mode, the memory system stores multiple bits per cell. The memory system stores fewer bits per cell when operating in the reduced capacity. The transition between modes is achieved by setting all bits of a particular memory page to a specific value, for example, either a logic “1” or a logic “0.”

Compensating for changes in the threshold voltage of the drive transistor of an OLED drive circuit, the drive transistor includes a first electrode, second electrode, and gate electrode; connecting a first voltage source to the first electrode, and an OLED device to the second electrode and to a second voltage source; providing a test voltage to the gate electrode and connecting to the OLED drive circuit, a test circuit, that includes an adjustable current mirror causing voltage applied to the current mirror, to be at a first test level; providing a test voltage to the gate electrode of the drive transistor and connecting the test circuit to the OLED device producing a second test level after the drive transistor and the OLED device age; and using the first and second test levels to calculate changes in the voltage applied to the gate electrode of the drive transistor to compensate for drive transistor aging.

A system for utilizing an array of electrical energy storage devices utilizes a smart manager that categorizes electrical energy storage devices in the array based on electrical energy storage device age and / or internal resistance level and causes those electrical energy storage devices with similar ages and / or resistance levels to be concurrently depleted. This is followed by concurrently depleting the electrical energy storage devices in a different category. The system also disconnects faulty electrical energy storage devices in the array and helps alleviate the need to carefully consider and reconfigure the location of individual electrical energy storage devices in the array. The system facilitates forecasting actual capacity and thus helps to guarantee available capacity and to actively maintain capacity via maintenance crews that need simply remove and replace cells as advised by the smart manager. The system 100 facilitates permitting a quality of service (QoS) to be provided to mission critical entities (banks, hospitals, etc.).