34results about How to "Characteristic is impaired" patented technology

The invention relates to frame structures, particularly to mobile stations and other small-sized portable devices operating at high frequencies. The frame structure according to the invention is formed by extrusion, whereby the fixing means required for fastening components are formed into it during the extrusion. Such fixing means are preferably pin-like projections which can be compressed to a rivet fixing the component. Such fixing means can also be strip-like fixing edges which are bent over the component edges. With such fixing means it is possible to form at the same time both a mechanical fixing and a good electrical contact between the component and the frame structure. During the extrusion it is also possible to fasten to the frame structure parts made of other materials, such as fixing means of other types or other components, such as antennas.

A semiconductor device including: a semiconductor layer including an element formation region and an isolation region provided around the element formation region; an element formed in the element formation region; an interlayer dielectric formed above the semiconductor layer; an electrode pad formed above the interlayer dielectric; a passivation layer formed above the electrode pad and having an opening which exposes at least part of the electrode pad; and a bump formed in the opening and having a rectangular planar shape having a short side and a long side, the bump at least partially covering the element when viewed from a top side, and the semiconductor layer positioned within a specific range inward and outward from a line extending vertically downward from the short side of the bump being a forbidden region.

The present invention relates to complexes of a) bi-specific antibodies and antibody fragments against a target protein and b) a digoxigenin conjugated to a therapeutic or diagnostic agent, methods for their production, their use as a delivery platform for therapeutic or diagnostic agents, pharmaceutical compositions containing said antibodies, and uses thereof.

The present invention is has an object of providing an optical device miniaturized while maintaining bonding strength between a semiconductor substrate and a light-transmissive plate, reducing possibility of warpage, and maintaining yields and design flexibility, a method of manufacturing the optical device, and an electronic apparatus. The optical device according to the present invention includes a semiconductor substrate having one surface in which a light-receiving element is formed; and a light-transmissive plate provided above the semiconductor substrate so as to cover the light-receiving element. The semiconductor substrate and the light-transmissive plate are partially bonded above a light-receiving unit of the semiconductor substrate. The light-receiving element is formed in the light-receiving unit.

A coaxial light-guide system includes a coaxial light-guide optical fiber which is fabricated by having refractive index profile set on radii. Thus the coaxial circular outer-cladding and the axial inter-cladding have the same refractive index. The light guide refractive index profile center is moved from the axis to the entire radii of the optical fiber. Light propagates between the axial inter-cladding and the coaxial circular outer-cladding. Such a new positioning prevents center-dip in the refractive index profile that occurs to the prior optical fiber after fabrication is finished. The coaxial single-mode optical fiber of the invention has a greater optical flux than the prior optical fiber, and can increase communication distance. Coupled with a coaxial light source and photodiode of the invention that have an coaxial inner and outer conductors to supply electric power and a plurality of annular semiconductor layers interposed therebetween, energy waste caused by prior edge-emitting elliptic light source injecting in a circular core can be eliminated.

To provide a method for manufacturing a high-performance field electron emission apparatus, wherein occurrence of damage to a CNT during a manufacturing step is prevented, and thereby, the CNT can adequately keep an inherent electron emission characteristic of exhibiting a large current density with a low threshold value. This method for manufacturing a field electron emission apparatus is related to the manufacture of a field electron emission apparatus using the CNT as an electron source. In the method, a protective film formation step is performed in order to form an aluminum film 4 as the protective film on the surface of the CNT film 2 during a manufacturing process of at least a part of the apparatus. The CNT surface structure is protected with this conductive protective film (aluminum film 4, 40), while the structure significantly affects the electron emission characteristic. Consequently, the electron emission characteristic inherent in the CNT can be adequately ensured and be exhibited.

A method for preparing lithium manganate having spinel structure which comprises contacting a manganese halide and lithium compound at a temperature of 100° C. or less in a liquid phase to react with each other; a lithium manganate which is prepared according to the method, is represented by the formula LixMnOy, wherein x represents a real number satisfying 0<x<=0.8, and y represents a real number satisfying 1.8<=y<=2.4, and has an average particle diameter of 1 to 50 mum and a specific surface area of 10 to 15 m<2> / g; a positive electrode for a lithium secondary cell comprising the lithium manganate as an active material; and a lithium secondary cell using the positive electrode.

In a metal layer material comprising at least two metal sheets, each sheet has a thickness of less than 1.5 mm. Between the sheets, a plastic layer is disposed, which is bonded to the metal sheets. The plastic layer comprises a plastic material and basalt fibers, and the basalt fibers have a modulus of elasticity exceeding 50 GPa. The basalt fibers may constitute 35-75% of the volume of the plastic layer. and may be comprised of 35-55 weight % of SiO2, 10-25 weight % of Al2O3, and 3-10 weight % of MgO. In aerospace applications and other applications requiring good specific strength, stiffness and damage tolerance, the metal sheets may be made of a metal having a tensile strength exceeding 0.20 GPa.

An optical connector includes a receptacle body 40 having an engage hole 46 formed in a peripheral wall 45 of a chamber 44, a pigtail body 50 having a base body 51 contained in the chamber 44 and a locking protrusion 56 engaged in the engage hole 46 to attach the pigtail body 50, and a ferrule assembly 60 being inserted in a container 53 in the base body 51 so that the ferrule 62 is positioned in a receptacle cylinder 52, and a spring 70 inserted through an opening 54 in the base body 51 and pressing the ferrule 62 forward, wherein a stopper 73 is formed in the spring 70 as an integral part of the spring 70. A locking part 73b included in the stopper 73 is positioned in a recess 63 in the ferrule 62.

A metallic layer material includes at least two metal sheets. Each sheet has a thickness of less than 1.5 mm. Between the sheets, a plastic layer is disposed, which is bonded to the metal sheets. The plastic layer comprises a plastic material and basalt fibers, and the basalt fibers have a modulus of elasticity exceeding 50 GPa. The basalt fibers may constitute 35-75% of the volume of the plastic layer. and may be comprised of 35-55 weight % of SiO2, 10-25 weight % of Al2O3, and 3-10 weight % of MgO. In aerospace applications and other applications requiring good specific strength, stiffness and damage tolerance, the metal sheets may be made of a metal having a tensile strength exceeding 0.20 GPa.

A turbine housing (1) of an exhaust-gas turbocharger (15) having a turbine volute (7) which is delimited by a metallic outer shell (8) and which has an inner wall (9); and a heat insulation layer (10) which is arranged on the inner wall (9) and which has a heat insulation core (6A, 6B) which, on its surface (12A, 12B) facing into a volute interior space (11), is covered by a first sheet-metal shell (3A, 3B). The heat insulation core (6A, 6B) is covered, on a surface (13A, 13B, 13′B) facing toward the inner wall (9), by a second sheet-metal shell (4A and 4B respectively).

The present invention relates to complexes of a) bi-specific antibodies and antibody fragments against a target protein and b) a digoxigenin conjugated to a therapeutic or diagnostic agent, methods for their production, their use as a delivery platform for therapeutic or diagnostic agents, pharmaceutical compositions containing said antibodies, and uses thereof.

A mixture comprising 40-80 mass % of expanded graphite, 5-25 mass % of heat-resistant reinforcing fiber and 10-40 mass % of heat-resistant binder is formed into a sheet form and then cured to form a sheet. The sheet is formed into a drag washer by punching, for application to a fishing reel's drag washer.

A battery pack includes first and second battery modules arranged in a first direction. In the first battery module, a first heat transfer part and a first heat insulator are disposed between battery cells adjacent in a second direction orthogonal to the first direction. In the second battery module, a second heat transfer part and a second heat insulator are disposed between battery cells adjacent in the second direction. The first heat transfer part constitutes a part of a heat transfer component that is put across and connected to both the first and the second battery modules. The first heat transfer part is connected to one of the battery cells in the first battery module so as to enable heat transfer. The second heat transfer part constitutes another part of the heat transfer component and is connected to one of the battery cells in the second battery module.

A battery module includes a first heat transfer component and a first thermal expansion material member that are disposed between the battery cells adjacent to each other. The first thermal expansion material member has a thermal conductivity lower than a thermal conductivity of the first heat transfer component and expands at a first predetermined temperature or higher, in which when temperature of the first thermal expansion material member is less than the first predetermined temperature, the adjacent battery cells are connected to each other via a high thermal conductive route including the first heat transfer component and having a first thermal conductivity, and in which when the temperature of the first thermal expansion material member reaches the first predetermined temperature or higher, the adjacent battery cells are connected to each other via a low thermal conductive route having a second thermal conductivity lower than the first thermal conductivity.

A semiconductor device including: a semiconductor layer including an element formation region including an element; an interlayer dielectric layer above the semiconductor layer; an electrode pad above the interlayer dielectric layer; a passivation layer above the electrode pad and having an opening exposing at least part of the electrode pad; and a bump in the opening and covering at least part of the element, the bump including first and second edges, the semiconductor layer having a forbidden region including: a first specific distance outward from a first line directly below the first edge, a second specific distance inward from the first line, a third specific distance outward from a second line directly below the second edge, and a fourth specific distance inward from the second line.

A semiconductor device having: a semiconductor layer; an interlayer dielectric formed on the semiconductor layer; a buffer layer formed on the interlayer dielectric; and an electrode pad formed on the interlayer dielectric, the buffer layer being formed to be covered by an edge portion of at least part of the electrode pad when viewed from a top side.

A method for producing a thin film transistor substrate includes the steps of: (i) depositing an amorphous semiconductor film on a transparent insulating substrate; (ii) patterning the amorphous semiconductor film so as to form insular amorphous semiconductor films, the step (ii) including a process (I) for forming, in respective stripe areas each of which is elongate in a first direction in a display area, a plurality of insular semiconductor films whose channel length is in line with the first direction, and a process (II) for forming, in an area including extended portions of the striped areas in a peripheral circuit area, a plurality of insular semiconductor films; (iii) polycrystallizing the insular semiconductor films in the peripheral circuit area so that the insular semiconductor films have high mobility in a second direction and polycrystallizing the insular semiconductor films in the display area so that the insular semiconductor films have high mobility in the first direction; and (iv) forming TFTs by using polycrystalline insular semiconductor films. In at least one peripheral circuit, a channel of a high speed TFT is positioned on a portion other than the extended portions of the stripe areas.

A semiconductor device including: a semiconductor layer; a transistor formed in the semiconductor layer and including a gate insulating layer and a gate electrode, the transistor being a high voltage transistor in which an insulating layer having a thickness greater than the thickness of the gate insulating layer is formed under an end portion of the gate electrode; an interlayer dielectric formed above the transistor; and an electrode pad formed above the interlayer dielectric and positioned over at least part of the gate electrode when viewed from a top side.

A semiconductor device including: a semiconductor layer; a transistor formed in the semiconductor layer and including a gate insulating layer and a gate electrode, the transistor being a high voltage transistor in which an insulating layer having a thickness greater than the thickness of the gate insulating layer is formed under an end portion of the gate electrode; an interlayer dielectric formed above the transistor; and an electrode pad formed above the interlayer dielectric and positioned over at least part of the gate electrode when viewed from a top side.

A semiconductor device, including: a semiconductor layer having an active region; a first conductive layer formed above the semiconductor layer and having a first width; a second conductive layer connected to the first conductive layer and having a second width smaller than the first width; an interlayer dielectric formed above the semiconductor layer; an electrode pad formed above the interlayer dielectric and covering the active region when viewed from a top side; and a forbidden region provided in the semiconductor layer in a specific range positioned outward from a line extending vertically downward from an edge of at least part of the electrode pad. A connection section at which the first conductive layer and the second conductive layer are connected is not provided in the forbidden region.

A battery module includes a first heat transfer component and a first thermal expansion material member that are disposed between the battery cells adjacent to each other. The first thermal expansion material member has a thermal conductivity lower than a thermal conductivity of the first heat transfer component and expands at a first predetermined temperature or higher, in which when temperature of the first thermal expansion material member is less than the first predetermined temperature, the adjacent battery cells are connected to each other via a high thermal conductive route including the first heat transfer component and having a first thermal conductivity, and in which when the temperature of the first thermal expansion material member reaches the first predetermined temperature or higher, the adjacent battery cells are connected to each other via a low thermal conductive route having a second thermal conductivity lower than the first thermal conductivity.

A ball screw in which a nut and a male-threaded shaft provided with an arcuate continuous groove threadedly engage by way of a multiplicity of steel spheres inserted between the male threads and female threads, the end portion seal member is capable of being attached toward a front or toward a back from said nut, and has a support frame body arranged at an outside circumference of said male-threaded shaft; a base fabric portion, a back surface of which is secured to an inside circumferential surface of said support frame body; and the cut pile that protrudes in such fashion as to be directed toward said groove from a front surface of said base fabric portion; wherein fiber tip portions of said cut pile are bent and made to abut said groove so as to occlude a gap between said groove and said support body, and good lubricant is retained.

A semiconductor device including: a semiconductor layer including an element formation region including an element; a dielectric layer above the semiconductor; an electrode pad above the dielectric; a passivation layer above the pad and having an opening exposing part of the pad; and a bump in the opening and covering part of the element, the bump including first, second, third and fourth edges, the semiconductor having a forbidden region including: a first distance outward from a first line below the first edge, a second distance inward from the first line, a third distance outward from a second line below the second edge, a fourth distance inward from the second line, a fifth distance outward from a third line below the third edge, a sixth distance inward from the third line, a seventh distance outward from a fourth line below the fourth edge, and an eighth distance inward from the fourth line.

A thin film transistor of reversed stagger type having improved characteristics and yet obtained by a simple process, which is fabricated by selectively doping the semiconductor region on the gate dielectric to form the source, drain, and channel forming regions by using ion implantation, ion doping, or doping a plasma of ions; and then effecting rapid thermal annealing by irradiating a ultraviolet radiation, a visible light, or a near-infrared radiation for a short period of time. The source, drain, and channel forming regions are formed substantially within a single plane.

The present disclosure relates to a novel organic compound and an organic EL device including the organic compound. The compound according to the present disclosure may be used in an organic layer of an organic EL device, more specifically, in a light emitting layer, a light emitting auxiliary layer, an electron transport auxiliary layer, or an electron transporting layer and may improve driving voltage, luminous efficiency, and lifespan characteristics of the organic EL device.

A semiconductor device comprising: a semiconductor layer including an element formation region, and first and second spaced apart isolation regions; an element in the element formation region; an interlayer dielectric layer above the semiconductor layer; an electrode pad above the interlayer dielectric layer; a passivation layer above the electrode pad and having an opening which exposes part of the electrode pad; and a bump in the opening and covering part of the element when viewed from a top side, the bump including a first edge when viewed from the top side, the first isolation region being formed in a first region, the first region including a first specific distance outward from a first line directly below the first edge of the bump, the second isolation region being formed in a second region, the second region including a second specific distance inward from the first line.