33results about How to "Prevent variation" patented technology

When a required speed ratio as a required value of a speed ratio between an engine and a driveshaft becomes equal to or less than a lower limit speed ratio that is not more than an n-th shift speed ratio during an n-th speed state of a transmission, a hybrid vehicle controls the engine, two motors, and the transmission to ensure output of power based on a torque demand to the driveshaft while performing an engine rotational speed adjustment of making a rotational speed of the engine equal to a shift rotational speed corresponding to an upper side shift speed ratio or an effective shift speed ratio and a shift from an n-th speed state to an (n+1)-th speed state.

A duty cycle correction (DCC) circuit and a delayed locked loop (DLL) circuit using the same are disclosed. The DCC circuit is operated by an enable signal which is enabled when the DLL is locked. The duty cycle correction (DCC) circuit includes a clock input unit and a duty cycle mixing unit. The clock input unit receives the enable signal and first and second clock input signals having opposite phases, generates an inverting signal of the first clock input signal, and when the enable signal is enabled, generates first and second internal clock signals, based on the first and second clock input signals and the inverting signal. The duty cycle mixing unit mixes a phase of the first internal clock signal with a phase of the second internal clock signal.

A plasma processing apparatus includes: a process chamber which accommodates a substrate to be processed; a lower electrode disposed in the process chamber; an upper electrode including an electrode plate that is detachable and discharges a process gas inside the form of shower into the process chamber; a gas supply unit including a central pipe and a edge pipe for supplying the process gas to the upper electrode; a first high frequency power source which applies high frequency power for plasma generation to the lower electrode; pressure indicators which detect pressures inside gas supply pipes; and a controller which measures a degree of consumption of the electrode plate based on the pressures detected by the pressure indicators and calculates a variation in process rate resulting due to the consumption of the electrode plate to adjust process conditions to resolve the variation in process rate.

A semiconductor dynamic quantity sensor has a support substrate with a rectangular opening portion, and a movable electrode and fixed electrodes are respectively supported by the support substrate through supporting portions to face the opening portion. The supporting portions supporting the movable electrode are arranged in a direction approximately the same as that in which the supporting portions supporting the fixed electrodes are arranged.

An image forming device comprises a process cartridge. The process cartridge comprises a development roller. The development roller comprises a magnet roller and a developing sleeve 132. The magnet roller is fixed. The depressions 139 each having an oval shape are formed on the external surface of the developing sleeve 132. Both ends of the depressions 139 which are adjacent with each other along the longitudinal direction of the developing sleeve 132 are overlapped with each other and both ends of the depressions 139 which are adjacent with each other along the circumferential direction of the developing sleeve 132 are spaced with each other.

Disclosed is a photosensitive resin composition used to form spacers of a liquid crystal display device. The photosensitive resin composition comprises [A] an alkali-soluble resin, [B] a reactive unsaturated compound, [C] a photopolymerization initiator and [D] a solvent wherein the alkali-soluble resin [A] is a copolymer including structural units represented by Formulae 1 to 3, which are described in the specification. Column spacers formed using the photosensitive resin composition exhibit high compressive displacement, elastic recovery and residual film ratio.

A printer comprises a feed roller to which driving force is transmitted from a motor via a reducer. While the feed roller moves a recording paper, an image is recorded by a line print head one line by one line. The feed roller is provided with a rotary encoder. A controller counts encoder pulses (measured EP) of the rotary encoder to measure an actual feed amount of the recording paper. Whenever five lines are recorded, the measured EP is compared with predetermined reference encoder pulses to detect a feed error of the recording paper. In case that slipping or the like occurs on the reducer, delay in feeding the recording paper is caused. A printing cycle of the next five lines is adjusted so as to eliminate the feed error. In this way, a printing length of one frame is adjusted to a target printing length.

An ignition timing control system for internal combustion engines, which is capable of preventing occurrence of variation in engine speed and vibrations which can be caused due to variation in combustion state between the cylinders, to thereby improve drivability. The ECU 2 of the ignition timing control system 1 calculates a statistically processed value Pmi_ls#i according to the in-cylinder pressure Pcyl#i, and calculates an averaging target value Piav_cmd by weighted averaging of a minimum value Pmi_ls_min1 and a second minimum value Pmi_ls_min2 within a predetermined range of the statistically processed value. The ECU 2 calculates a correction value DIGCMP#i by performing a limiting process for setting the optimization correction value DIGOP#i for control of the ignition timing to a limit value on the advanced side, on the averaging correction value DIGPIAV#i for causing the statistically processed values Pmi_ls#i to follow the averaging target value Piav_cmd, such that the statistically processed values Pmi_ls#i becomes maximum. The ignition timing IGLOG#i is calculated for each cylinder based on the correction value DIGCMP#i.

This invention allows for stable operation of a circuit to which an output voltage is supplied. The invention resides in a semiconductor device comprising a VREF1 regulator to which a reference voltage Vref1 relative to a first potential is input; and an output circuit which generates an output voltage Vint that is proportional to a voltage on its input terminal relative to a second potential. The VREF1 regulator comprises a constant current source which generates a constant current having a current value that is proportional to the reference voltage Vref1; and a first resistor element which is supplied with the constant current, one end of which is coupled to the input terminal of the output circuit and the other end of which is coupled to the second potential.

A control device for a spark-ignition internal combustion engine that sets ignition timing based on a target value of a predetermined combustion-related parameter correlated with a combustion state and operates an ignition device in accordance with the ignition timing thus set. The control device calculates an actual value of the combustion-related parameter from an output value of the cylinder pressure sensor and feeds back the calculated value of the combustion-related parameter to the setting of ignition timing. Further, in parallel with the above processing, the control device calculates a value of a predetermined combustion variation parameter correlated with the magnitude of combustion variation from the output value of the cylinder pressure sensor. If the calculated value of the combustion variation parameter deviates from an allowable range of the combustion variation, the control device stops the feedback of the calculated value of the combustion-related parameter.

An object of the present invention is to provide a scroll compressor capable of three-dimensional compression, which can prevent performance deterioration and performance variation due to gas leakage occurring on an outer peripheral side of a step portion of a spiral wrap and can achieve performance stabilization and performance improvement. In a scroll compressor configured to be capable of three-dimensional compression in a circumferential direction and a height direction of spiral wraps, in which top surfaces and bottom surfaces of spiral wraps (25B and 27B) are provided with step portions (25E and 27E) and the wrap height on the outer peripheral side of the step portion is made higher than the wrap height on the inner peripheral side, back-pressure introducing portions (55 and 57) where gaps between the back surfaces at step-portion ends of tip seals and groove bottom surfaces of tip seal grooves are made larger than a gap at the other portion are formed between the step-portion ends of tip seals (51 and 53) provided on top surfaces (25G and 27G) on the outer peripheral side of the spiral wraps and tip seal grooves (25L and 27L) to which the tip seals are fitted.

A line head includes a lens array having a plurality of positive lens systems in a first direction. Each positive lens system has a pair of lenses with positive refractive power. A light emitter array disposed on an object side of the lens array has a plurality of light emitting elements disposed corresponding to the positive lens systems. An aperture plate forms an aperture stop on the object side of the pair of lenses. A focal distance f₁ of one of the pair of lenses disposed on the object side satisfies the conditional formula f₁≦d₀/(1+W₀/D₁).

The invention discloses a quick propagation method for humulus scandens. The method comprises the following steps of: culturing tissues, such as stem section of the humulus scandens, on an LS culture medium; accurately cutting and taking the stem section with 1-2 axillary buds as an explant; disinfecting and then inoculating in an LS+6-BA 1.2mg/L+NAA 0.2mg/L culture medium for culturing; wherein the explant buds after being inoculated for about 6-8 days and grows into a plantlet with leaves after being inoculated for about 10 days; cutting off the plantlet and transferring to an LS+6-BA 0.5mg/L+IAA 0.4mg/L culture medium, so as to keep high-speed increasing and a propagation coefficient above 5; selecting LS+6-BA 0.5mg/L+IAA 0.4mg/L+NAA 0.5mg/L as a rooting culture medium, wherein the rooting rate is above 90% and the complete plant can be obtained only after about 25 days; and transplanting a test-tube plantlet into sandy soil, carefully keeping water and humidity, and establishing a set of high-frequency stable regeneration system after the transplanting survival rate is above 90% after transplanting for 1 month. The method provided by the invention has the advantages of excellent stability, convenience in operation, high propagation speed and low production cost, achieves industrial level, and the like.

The invention discloses a rapid propagation method of triarrhena sacchariflora. The rapid propagation method comprises the following steps of: selecting an excellent single plant of the triarrhena sacchariflora; cutting to take a stem section with 1-2 axillary buds as an explant; after sterilization, inoculating the explant in MS+6-BA0-2.0 mg/L culture medium to culture for 3-5 days, wherein the axillary buds start to sprout and a plantlet is formed around 7-9 days; cutting the plantlet and inoculating the plantlet in MS+6-BA 2.0-6.0 mg/L +IAA0.1-0.5 mg/L+NAA0-0.5 mg/L enrichment culture medium, and keeping high-speed increasing by degrees, wherein enrichment coefficient is above 4; synchronously inducing buds and roots on the enrichment culture medium which is added with NAA, wherein rootage rate is above 85 percent, and a complete plant can be formed only within about 35 days; and transplanting a test tube plantlet to natural soil, wherein transplanting survival rate reaches above 90 percent; thus a set of high-frequency and stable regeneration system is established. The method greatly simplifies the operation process, shortens the culturing time, saves the production cost, and provides a seedling growing method with short cycle, high propagation rate and low cost for large scale planting of the triarrhena sacchariflora.

First and second aluminum alloy materials (2, 3), each comprised of a 5000-series aluminum alloy containing second phase particles having a diameter less than 5 μm in a distribution density of less than or equal to 10,000 second phase particles/mm², are welded together by abutting portions of the first and second aluminum alloy materials, and friction stir welding along the abutted portions (5) to form an integrally-welded aluminum alloy panel (1). The friction stir welding is performed using a tool (8) having a shoulder (10) under the following conditions: (i) the shoulder of the tool has a diameter (d) in the range of 3 mm≦d≦8 mm and (ii) the revolution number (r) of the tool is 6<r≦20, wherein r is tool revolutions/length of the weld (4) in millimeters.

An electronic device is provided which includes a base, a through-electrode that passes through the base and from which an insulating material on an end face thereof is removed by polishing, a circuit pattern that is formed on an end face of the through-electrode, an electronic component that is disposed via an internal wiring formed on the circuit pattern, an electrode pattern that is formed on the surface of the base opposite to the surface on which the electronic component is disposed and that is connected to the other end face of the through-electrode, an external electrode that is formed on the electrode pattern, and a cap that is bonded to the base so as to protect the electronic component on the base.

An electrophotographic photosensitive member that includes the outermost surface layer formed by curing a mixture of a charge transporting substance having a chain-polymerizable functional group and a urea compound represented by the following formula (1) or (2), and a process cartridge and an electrophotographic apparatus each including the electrophotographic photosensitive member.

A flat display device including a display panel. The display panel includes a unit pixel, the unit pixel having a red sub-pixel, a green sub-pixel, a blue sub-pixel, and a white sub-pixel. The flat display device further includes a panel driving unit to drive the flat panel in a first driving period and a second driving period in an alternating manner to display a white image on the unit pixel. The panel driving unit generates first white unit data, to enable two of the red, green, and blue sub-pixels and the white sub-pixel to be driven in the first driving period. The panel driving unit generates second white unit data, to enable three of the sub-pixels, which include the sub-pixel not driven in the first driving period, to be driven in the second driving period.

An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high performance and high reliability, which uses the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride added with fluorine or silicon nitride oxide added with fluorine, are alternately deposited so that an insulating layer is formed. By sandwiching an insulator containing nitrogen and fluorine between insulators containing nitrogen, the insulator containing nitrogen and fluorine can be prevented from absorbing moisture and thus a dielectric strength voltage can be increased. Further, an insulator contains fluorine so that a dielectric constant can be reduced.

The invention relates to a rapid propagation method of nothapodytes pittosporoides, and the method is characterized in that tissues such as tender shoot sections are cultivated on a murashige and skoog (MS) culture medium, a tender shoot stem section with one to two sprouts is cut as explants, the explants are grafted in MS+6-butyl acrylate (BA) 1.2mg/L+ indole butyric acid (IBA)0.2mg/L culture medium after being sterilized, the bud is germinated in 10 to 15 days after the grafting, seedlings with leaves are formed in 30 days, the seedlings are cut off and transferred onto the MS+6-BA1.2mg/L+IBA0.4mg/L culture medium to keep the high-speed increase, and the propagation coefficient is more than 5. The MS+6-BA0.5mg/L+ naphthyl acetic acid (NAA)1.5mg/L is selected as rooting culture medium, the rooting rate reaches more than 95 percent, and a complete plant can be formed in 30 days. Test-tube plantlets are transplanted in sandy soil, attention is paid on the moisture preservation, the transplanting survival rate can reach up to 93 percent after the test-tube plantlets are transplanted for 45 days, and a high-frequency stable renewable system is established. The method has the advantages of good stability, simplicity and convenience in operation, fast propagation speed, low production cost, industrialization and the like.

An acoustic wave device includes a piezoelectric substrate and an IDT electrode disposed thereon. The IDT electrode includes a metal laminate. The metal laminate includes a first metal layer made of Al or an Al-based alloy, a second metal layer made of a metal or alloy different from that used in the first metal layer, a Cu layer, and a Ti layer. The Cu layer and the Ti layer are disposed between the first and second metal layers. The Cu layer is located on the first metal layer side.

A capacitive-coupling electronic pen includes a tubular housing, a signal transmission circuit arranged in the housing, a tubular conductor fixed and arranged at a predetermined position in the housing, a conductive core body including a front end protruding from an opening on one side of the housing in an axial direction and an opposite end opposite the front end that is inserted into a hollow portion of the tubular conductor such that the opposite end is movable, and a connection member that electrically connects the signal transmission circuit and the tubular conductor. A signal from the signal transmission circuit is transmitted to the core body through capacitive coupling between the tubular conductor and the core body and transmitted to an outside of the electronic pen from a tip portion of the core body when the tubular conductor and the core body are not in contact with each other.

1. A plasticizing device includes a barrel including a resin material supply port portion and a fiber supply port portion which is formed on a distal side from the resin material supply port portion; and a screw that comprises a shaft body and a flight, and is received in the barrel. The barrel is disposed with a posture in which its axial line intersects a gravitational direction. A maximum length of an opening in the barrel of the fiber supply port portion along an axial direction of the barrel is 1 time or more and 2 times or less as much as a pitch of the flight disposed in a portion of the screw which faces the opening in the barrel of the fiber supply port portion in a direction perpendicular to the axial line of the barrel.

A solid-state imaging apparatus including an insulating structural body having a through opening, a wiring part formed on a front surface of the structural body, a solid-state imaging element which is connected to the wiring part and also is attached to the structural body so as to close the through opening, a translucent member which is opposed to the solid-state imaging element and is attached to the structural body through an adhesive inside an adhesion region R so as to close the through opening, and a solder resist film with which at least a part of the front surface of the structural body is covered, and is characterized in that a region R0 in which the solder resist film is selectively removed is had in the adhesion region R and the removed region R0 is filled with the adhesive.

A throat microphone includes a cantilevered piezoelectric device 1 having a fixed end 11 supported by a base 3 and a free end with an anchor 4 fixed thereto. The piezoelectric device 1 vibrates to output audio signals in response to vibrations of a throat. The fixed end is attached to the base 3 such that the piezoelectric device 1 vibrates parallel to the surface of the base 3. A gap is defined between the anchor 4 and the base 3. The gap is provided with a vibration absorber 5.

Provided is a cup-shaped plating apparatus which can plate the whole area of a plating target surface with a uniform film thickness. In a cup-shaped plating apparatus including a placement portion of an object to be plated which is provided at an opening end of a plating tank, means for supplying a plating solution into the plating tank, a plating solution outlet port which is formed in the plating tank, a cavity portion into which the plating solution which has flown out of the outlet port flows, a plating solution discharge port within the cavity portion, and a collection tank for the plating solution discharged from the discharge port, which subjects the object to be plated to plating treatment while supplying the plating solution into the plating tank, the shape and/or opening area of the discharge port formed on the downstream side of the cavity portion can be changed. If the shape and/or opening area of the discharge port formed on the downstream side of the cavity portion can be adjusted, it is possible to suppress nonuniform plating and variations in plating on a plating target surface by adjusting the shape and/or opening area.

A method of manufacturing a semiconductor device includes a semiconductor region forming process, a cleaning process, a surface roughness uniformizing process, and an electrode forming process. As the semiconductor region forming process, semiconductor regions are formed such that a plurality of semiconductor regions with different ion injection amounts are exposed on one principal surface of a semiconductor substrate. As the cleaning process, after the semiconductor region forming process, a cleaning using hydrofluoric acid is performed on the one principal surface of the semiconductor substrate. As the surface roughness uniformizing process, after the cleaning process, the surface roughness of the one principal surface of the semiconductor substrate is uniformized. As the electrode forming process, after the surface roughness uniformizing process, electrodes are formed on the one principal surface of the semiconductor substrate.