62results about How to "Sensitivity is deteriorated" patented technology

A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s1 from the peripheral portion toward the central portion. The shift amount s1 is greater than the shift amount r.

The present invention provides a gas sensor having excellent humidity resistance even if used in a high temperature and high humidity atmosphere. According to the present invention, a gas sensor is comprised of: a silicon substrate; a metal-oxide semiconductor portion comprised mainly of SnO2 and formed on the substrate; and a catalytic portion comprised of Pd and dispersed on a surface of the metal-oxide semiconductor portion, wherein the metal-oxide semiconductor portion and the catalytic portion constitute a gas sensing portion. Furthermore, an insulating portion comprised mainly of SiO2 is formed dispersedly on a surface of the gas sensing portion. Further, the catalytic portion and the insulating portion are formed on the surface of the metal-oxide semiconductor portion so that the surface additive rate, which is expressed by Si / (Pd+Si) representing the ratio in the number of atoms of Si to Pd, of the gas sensing portion having the insulating portion may be 65% or more to 97% or less, and so that the surface additive rate, which is expressed by Si / (Sn+Si) representing the ratio in the number of atoms of Si to Sn, of the gas sensing portion may be 75% or more to 97% or less.

A solid-state image capturing device includes, in a semiconductor substrate, a photoelectric conversion section which performs photoelectric conversion on incident light to obtain signal charges; a pixel transistor section which outputs the signal charges generated in the photoelectric conversion section; a peripheral circuit section which is formed in the periphery of a pixel section including the photoelectric conversion section and the pixel transistor section; and isolation areas which electrically separate the photoelectric conversion section, the pixel transistor section, and the peripheral circuit section from each other. The isolation areas in the periphery of the pixel transistor section each have an insulating section formed higher than a surface of the semiconductor substrate. A first gate electrode of a transistor of the pixel transistor section is formed between the insulating sections and on the semiconductor substrate with a gate insulating film interposed therebetween.