11 results about "Measurement Profiles" patented technology

The invention provides a measuring system and method, an upper computer, a storage medium and a program product, the measuring system comprises a fixing tool, the fixing tool comprises a fixing flat plate and a negative pressure interface, the fixing flat plate is provided with an embedding groove used for fixing a to-be-measured part, and the embedding groove is communicated with the negative pressure interface through a negative pressure pipeline; the surface profile measuring equipment is used for collecting surface profile information of the to-be-measured part; the upper computer is used for processing the surface profile information according to a preset measurement rule to obtain three-dimensional data of the to-be-measured part; the preset measurement rule defines a corresponding relation among the to-be-measured three-dimensional data, the measurement section and the measurement strategy in the to-be-measured part. The system can improve the measurement precision of the to-be-measured part.

A system may include a lateral shearing interferometer. The lateral shearing interferometer may enable measuring a surface profile of a sample, such as the pattern wafers, using reflected light from the sample. The reflected light may be reflected at a grazing incidence angle. A controller may receive images from the lateral shearing interferometer and measure the surface profile. The controller may measure the surface profile by reconstructing a phase of the reflected light from the images. The controller may reconstruct the phase using spatial reconstruction or time-domain reconstruction. The gratings may allow the controller to measure the edge roll-off in one or two dimensions. The controller may also calibrate the grazing incidence angle and determine refractive indices of thin-films on the sample. The controller may also perform full measurements of the surface profile using line beams, rectangular beams, or full-sample beams.

The present disclosure relates to a surface profile measurement system and method. The surface profile measurement system comprises a displacement stage for carrying a reference sample and a sample and moving the reference sample and the sample. A white light interferometry module is configured to acquire a sequence of white light interference images at each measurement position on the surface of the sample to extract initial height data of different measurement points at each measurement position. A laser interferometry positioning module is configured to acquire a positioning interference image of the corresponding measurement position while the white light interferometry module acquires the sequence of white light interference images. A host computer is in signal connection with the displacement stage, the laser interferometry positioning module and the white light interferometry module, respectively. The host computer compensates the initial height data corresponding to the corresponding measurement points based on the positional offset of the positioning interference image of each measurement position relative to a reference interference image to obtain the height measurement value of each measurement point on the surface of the sample in the scanning direction, thereby eliminating the defocus error of the displacement stage.

The invention relates to a high-precision cutting device for a large-diameter high-strength steel cylinder structure, and belongs to the field of numerical control profiling machining of large cylinder structures. The device comprises a driving unit, a tool bit, a measurement profiling unit and a numerical control unit, the driving unit is used for driving the tool bit to perform six-degree-of-freedom motion so as to cut a workpiece; the measurement profiling unit is used for measuring the surface of the workpiece to obtain the actual shape of the surface of the workpiece; the numerical control unit is used for generating a tool bit machining path according to the obtained actual morphology of the workpiece surface. According to the invention, six-degree-of-freedom multi-axis movement of the tool bit can be realized. The numerical control unit generates a self-adaptive machining path through a trajectory planning and compensation algorithm, dynamic trajectory correction is achieved through the multi-axis linkage control module, the method can adapt to the situation of workpiece field deformation, adjustment flexibility is good, field machining efficiency and adaptability are remarkably improved, and machining precision is improved. And meanwhile, the problem of insufficient cutting precision caused by ovality and local deformation of a large-diameter cylinder is solved.

An integrated multiplex measurement system for measuring semiconductor objects includes a main body, a fringe interferometer, a white light interferometer probe, and a color conjugate focal measurement probe. The fringe interferometer, white light interferometer probe, and color conjugate focal measurement probe are housed within the main body. The fringe interferometer can be used to measure the warp, unevenness, color, brightness distribution, shape, and high-nitrogen region distribution of the semiconductor object. The white light interferometer probe and color conjugate focal measurement probe are located at one point. The white light interferometer probe can measure the surface roughness and surface depth of the semiconductor object, while the color conjugate focal measurement probe can measure the surface roughness and thickness of the semiconductor object. It can accurately measure the surface roughness of the semiconductor object using confocal imaging dispersion analysis technology, and can also perform surface profile measurements, including fine curvature and structural features. This invention integrates multiple measuring devices into one machine, which can be used separately or together, thus facilitating the measurement of semiconductor objects.

The invention provides a polishing solution detection method and a polishing solution detection system, and the method comprises the following steps: providing a substrate, and coating the surface of the substrate with a polishing solution; the substrate is dried at a preset temperature, and a first slurry film is formed on the surface of the substrate; performing surface profile measurement on the first slurry film to obtain surface profile information of the first slurry film, and performing two-dimensional Fourier transform analysis on the surface profile information of the first slurry film; the steps of polishing solution coating and drying treatment are repeatedly executed on the surface of the first slurry film, and a second slurry film with the preset thickness is formed on the surface of the substrate; performing surface profile measurement on the second slurry film to obtain surface profile information of the second slurry film, and performing two-dimensional Fourier transform analysis; and performing SEM detection and EDS / EDX material analysis on the second slurry film. According to the polishing solution detection method, the polishing quality can be accurately evaluated, optimization of CMP process parameters is facilitated, and the polishing quality and the production efficiency are improved.

A leak detection method (100) comprising: - a learning step (101) during which at least one reference measurement signal representative of the flow or concentration of tracer gas in a reference test object (A) or in an environment surrounding a reference test object (A) is measured during at least one leak test cycle (C), - a plurality of successive test steps (102) during which a measurement profile representative of the flow or concentration of tracer gas is measured using the leak detector (1) during at least one leak test cycle (C) and compared with the reference profile to provide, based on the result of the comparison, a similarity indicator allowing the presence of an anomaly to be deduced. Figure 1

The invention relates to a method for measuring the surface profile of a nanostructure, and the method comprises the following steps: S100, constructing a scattering intensity calculation model of a target nanostructure, the scattering intensity calculation model comprising key structure parameters used for describing the surface profile; s200, performing a small-angle X-ray scattering experiment on the sample with the target nanostructure to obtain scattering experiment data of the target nanostructure; and S300, fitting the scattering intensity calculation model by using the scattering experiment data to obtain key structure parameters of the target nanostructure. The method for measuring the surface profile of the nanostructure does not need complex sample pretreatment, is non-destructive, high in efficiency and high in accuracy, and provides a brand new technical scheme for high-precision measurement of the nanostructure in the field of semiconductor manufacturing.

The application relates to a nanostructure surface profile measurement method, which comprises the following steps: S100, constructing a scattering intensity calculation model of a target nanostructure, wherein the scattering intensity calculation model comprises key structure parameters for describing a surface profile; S200, performing a small-angle X-ray scattering experiment on a sample with the target nanostructure to obtain scattering experiment data of the target nanostructure; and S300, fitting the scattering intensity calculation model by using the scattering experiment data to obtain key structure parameters of the target nanostructure. The nanostructure surface profile measurement method provided by the application does not need complex sample pretreatment, and has non-destructiveness, high efficiency and high accuracy, and provides a novel technical scheme for high-precision measurement of nanostructures in the field of semiconductor manufacturing.

This application discloses a surface profile measurement method, apparatus, device, storage medium, and product, relating to the field of optical surface measurement technology. The surface profile measurement method includes: irradiating a target light beam onto a dispersive confocal lens, separating light rays of different wavelengths in the target light beam through the dispersive confocal lens; controlling a two-axis motion platform to move the surface to be measured to different preset sampling points, and collecting the reflected signals obtained by the light irradiating the surface to be measured point by point; determining the target signal with the strongest signal among the reflected signals, and determining the distance between the surface to be measured and the dispersive confocal lens based on the wavelength corresponding to the target signal; determining the point cloud of the surface to be measured based on the distance, fitting the point cloud of the surface to be measured to obtain the fitted planar profile, and measuring the surface profile of the fitted planar profile to obtain the measurement result. This application does not require operators to have a high level of technical expertise, reducing the difficulty of use.

A system may include a lateral shearing interferometer. The lateral shearing interferometer may enable measuring a surface profile of a sample, such as the pattern wafers, using reflected light from the sample. The reflected light may be reflected at a grazing incidence angle. A controller may receive images from the lateral shearing interferometer and measure the surface profile. The controller may measure the surface profile by reconstructing a phase of the reflected light from the images. The controller may reconstruct the phase using spatial reconstruction or time-domain reconstruction. The gratings may allow the controller to measure the edge roll-off in one or two dimensions. The controller may also calibrate the grazing incidence angle and determine refractive indices of thin-films on the sample. The controller may also perform full measurements of the surface profile using line beams, rectangular beams, or full-sample beams.