4 results about "Self gating" patented technology

The invention relates to a self-gating material, a self-gating storage unit and a preparation method of the self-gating material, the chemical formula of the self-gating material is GeaAsbSecTed, a, b, c and d all refer to atomic components of elements and meet 0 lt; a / (a + b + c + d) < = 0.6, 0lt; b / (a + b + c + d) < = 0.6, 0lt; c / (a + b + c + d) < = 0.6, 0lt; d / (a + b + c + d) < = 0.18. According to the GeaAsbSecTed self-gating material disclosed by the invention, the threshold voltage is enabled to generate offset by applying pulses with different polarities, so that a storage window is formed for data storage. The GeaAsbSecTed self-gating material disclosed by the invention has good thermal stability, relatively long erasing service life, relatively large storage window and relatively low leakage current, a self-gating storage unit adopting the self-gating material has relatively high operation speed and relatively good cycle index, and the reliability of a device is greatly improved. Meanwhile, the self-gating preparation method is simple in process, and material components can be conveniently and accurately controlled.

Objective tinnitus detection uses cycle-locked signal segmentation and coherent averaging. A tinnitus-related signal is acquired from a subject, and cycle markers corresponding to a repeating physiological cycle (e.g., cardiac cycle) are obtained. The acquired signal is segmented based on the cycle markers, aligned to a reference phase, and coherently averaged to enhance the signal-to-noise ratio of tinnitus-related components. In self-gating embodiments, cycle markers are derived from the acquired signal itself by detecting periodicity through autocorrelation or spectral analysis, allowing single-sensor operation. Spectral analysis of the enhanced waveform enables characterization of tinnitus etiology, including indicators of vascular stenosis. Comparison of pre-treatment and post-treatment measurements provides objective treatment efficacy monitoring. Systems implementing these methods range from clinical multi-modal configurations to simplified mobile single-sensor devices.

The invention relates to a GaSbSe self-gating material and a self-gating device, the chemical general formula of the GaSbSe self-gating material is GaxSbySez, 0.1 < = x < = 0.3, 0.1 < = y < = 0.3, and x + y + z = 1. The self-gating device adopts a sandwich structure design, takes a GaSbSe self-gating material as a core middle functional layer, and is constructed by matching electrodes on two sides. According to the invention, the stacking height of the device is obviously reduced, the device can be directly integrated in a cross-type array system, and high-density storage application is realized; in addition, the GaSbSe self-gating material has low toxicity, excellent performance and good process compatibility, and an efficient and environment-friendly solution is provided for research and development of a next-generation non-volatile memory and an electronic switch.

The invention relates to a BiSe self-gating material and a self-gating device, the chemical general formula of the self-gating material is BixSey, wherein x is greater than or equal to 0.1 and less than or equal to 0.2, y is greater than or equal to 0.8 and less than or equal to 0.9, and x + y is equal to 1. The self-gating device prepared on the basis of the BiSe self-gating material has low toxicity, high performance and process compatibility, the stacking height of the device is reduced, the device can be integrated in a crossed array to realize high-density storage, and an efficient and environment-friendly solution is provided for a next-generation non-volatile memory and an electronic switch.