31results about How to "Avoid parallel" patented technology

The present invention discloses a structural crack bionic monitoring system and a monitoring method thereof. The structural crack bionic monitoring system comprises a plurality of smart wires I on the structure to be monitored and a monitoring unit composed of a plurality of smart wires II. The smart wires I and II which are insulated from one another are crossly provided on the structure to be monitored to compose a smart neural network of plane coordinate system on the structure to be monitored. The invention can accurately confirm the generated position, shape, length, time and expanding state of the slit according to the perception mechanism of the animal skin to the wound through the analysis of the signal processing device to the signal that is transmitted and received by the smart wire I and II. The engineering structure can be actualized with continous and omnibearing damage state monitoring. The bionic monitoring sensing system has the advantages of convenient and simple operation, high efficiency, low cost and reliable result.

A lid for use with a jar having an opening includes a closure member configured to cover the jar opening when the closure member is fastened to the jar. The lid includes an attachment member coupled to the closure member to selectively fasten the closure member to the jar. A catch is coupled to the closure member that extends toward the jar when the closure member is fastened to the jar. The lid includes a utensil having a use end and an opposed attachment end. A hook extends from the utensil attachment end so as to rotatably couple the utensil to the catch, each hook being removable from the catch only when the utensil is generally parallel to the closure member. The utensil has a length that prevents the utensil from being generally parallel to the closure member when the closure member is fastened to the jar.

The invention discloses an automatic withstand voltage detecting and automatic sorting device of safety equipment. The automatic withstand voltage detecting and automatic sorting device of the safety equipment comprises a box, current guide parts are arranged in the box, an equipment outlet is formed in the lower portion of the box, a rotating shaft is arranged at the position of the equipment outlet, the rotating shaft is connected with a gear motor arranged on the outer side of the box, one end of the rotating shaft is provided with a grounding poking roller in a sleeved mode, the other end of the rotating shaft is provided with a high-voltage poking roller in a sleeved mode, both the grounding poking roller and the high-voltage poking roller are provided with poking plates, both the grounding poking roller and the high-voltage poking roller are provided with elastic conductive components, the box, the current guide parts, the rotating shaft and the poking plates are all made of insulation materials, the equipment outlet is provided with a carrying component, an electric telescopic rod is arranged under the carrying component, and the grounding poking roller is connected with a current detection alarm device through a wire. Compared with the prior art, the automatic withstand voltage detecting and automatic sorting device can accurately measure leaked currents on the surface of the safety equipment, solve the problem that whether the safety equipment is qualified or not is difficult to judge accurately, and guarantee the personal safety of operating personnel and safe and reliable operation of power grids.

A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron and an AC magnetron for deposition of a high refractive index film, performs film deposition by each of the AC magnetrons until having achieved 90% of a designed film thickness, and then performs the film deposition only by each of the conventional magnetrons, and which can control the film thickness with high precision and have excellent productivity.

The invention discloses an on-site absorption spectrum gas analysis system. The system comprises a light transmitting unit, a light receiving unit and a signal analysis unit, wherein the light transmitting unit comprises a light source and a converging lens. The system is characterized in that: one end of the converging lens back to the light source is provided with an arc surface; the arc surface end of the converging lens is provided with a calibration chamber of which one end is provided with an opening and the other end is closed; the opening end is hermetically connected with the converging lens; an A-A section on the middle part of the converging lens is in any geometrical shape; and light emitted by the light source passes through the converging lens and the calibration chamber and enters a medium to be measured. The system has the advantages of real-time on-line calibration, high measuring accuracy and measuring sensitivity, simple and reliable structure, easily realized explosion isolation function, no need of blowing, low sealing requirement and the like, and is convenient to manufacture.

The invention discloses a height limiting rod detection and height calculation method. Image information of a limiting rod is obtained through a binocular camera with binocular heights arranged in a staggered mode; edge points are extracted from the image information, matching is conducted through a high-robustness edge point matching algorithm, an edge point disparity map is obtained, the edge point disparity map is a map with only the edge points, and the value of each point is the left-right disparity size of the binocular camera; and based on the edge disparity map, detection is performedto obtain a group of edges possibly representing height limiting rods, respective heights of the edges are calculated, the edges of which the heights fall into the height range of the height limitingrods are taken as the height limiting rods, and the heights are output. The method has the advantages that an epipolar line is prevented from being parallel to a horizontal line, and the reliability of parallax calculation is ensured by adopting a high-robustness edge matching algorithm; and a calculation result is more accurate based on a height limiting rod detection algorithm of the edge disparity map of the image.

The invention relates to a three-phase multi-split transformer-based CHB (Cascaded H-Bridged) cascade photovoltaic inverter circuit without changing a ground insulation voltage of the existing photovoltaic system device. Outputs of a high-power CHB cascade multi-level photovoltaic inverter are connected in series through magnetic coupling, and the high-power CHB cascade multi-level photovoltaic inverter can be safely and reliably operated in a photovoltaic power station. A low-voltage side winding is connected with a plurality of independent equipower inversion outputs, and the mode of using one split transformer is more economic, smaller in occupation and more convenient in maintenance and management compared with the mode of using a plurality of common transformers. According to the invention, flow resistance value of key devices is reduced, and IGBTs (Insulated Gate Bipolar Translators) are prevented from being connected in parallel.

The invention discloses a semiconductor laser transmissibility analysis system, which comprises an optical transmitter unit, an optical receiver unit and a signal analysis unit. The optical transmitter unit and the optical receiver unit are arranged on one side or two sides of the medium to be inspected. The optical transmitter unit comprises a semiconductor laser and a first convergent lens; the end of the first convergent lens corresponding to the semiconductor laser is an inclined plane; the optical distance of the principal ray of the laser beam between the semiconductor laser and the first convergent lens is shorter or equal to 7mm; The A-A sectional plane of the middle part of the first convergent lens is a random geometric shape, and the diameter of the smallest cover circle of the A-A sectional plane is bigger or equal to 25mm; the light sent out by the semiconductor laser goes into the medium to be inspected after going through the first convergent lens. The invention also discloses another semiconductor laser transmissibility analysis system.

The invention discloses a pressure-resistant detection device of a safety tool. The pressure-resistant detection device comprises a box body, wherein a flow guide part is arranged in the box body; a tool outlet is formed in a position below the box body; a rotary shaft with a rotary handle is arranged at the tool outlet; one end of the rotary shaft is sleeved with a grounding pull roll; the other end of the rotary shaft is sleeved with a high-pressure pull roll; pull plates and elastic conductive parts are arranged on both the grounding pull roll and the high-pressure pull roll; all of the box body, the flow guide part, the rotary shaft and the pull plates adopt insulated parts. According to the pressure-resistant detection device, the leakage current of the safety tool in a pressure-resistant test is measured in real time, the measured current is subjected to automatic judgment and warning, the detection efficiency is very high, a detection process can be finished in 8 hours only in comparison with a traditional device which finishes the detection process in three days, an automatic classification operation can be carried out, the problem of difficulty for accurately judging whether the safety tool is qualified is solved, and the personal safety of operators and the safe and stable running of a power grid are guaranteed.

The present invention provides a RFID tag device. The device comprises a structure piece which has at least two work surfaces having an acute angle or an obtuse angle with each other; and at least one RFID tag loop arranged on the structure piece, wherein the at least one RFID tag loop comprises at least two antenna coils, wherein each antenna coil is arranged to be located at one work surface. The RFID tag device can realize the arrangement of the two antenna coils with a acute angle or an obtuse angle with each other on the space to prevent the planes where the two antenna coils are located from being vertical or parallel so as to ensure that the at least one antenna coil is not perpendicular to the antenna transmission electromagnetic wave direction to effectively avoid signal blind area phenomenon and improve the tag identification and reading efficiency.

The invention relates to a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) of an integrated grid control diode with high surge current resistance, and belongs to the technical field of power semiconductor devices. As the withstand voltage of a silicon carbide power device is higher and higher, a drift region is thicker and thicker, so that more and more minority carriers of a PIN are compounded in the drift region to form a compound current in a bipolar conduction process, the compound current is completely borne by a channel of a grid-controlled diode, and the reliability of a gate oxide layer of the grid-controlled diode is greatly reduced. In order to alleviate the problem, a parallel PNP BJT is integrated for a grid-controlled diode, the thickness of an effective base region is reduced by using a reverse biased PN junction, and the recombination of minority carriers in the base region is reduced, that is, the generation of recombination current is reduced, the current density of a channel region in a surge state is alleviated, and the surge current resistance of the whole device is improved.

The invention relates to a silicon carbide separation gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) cell integrated with a gate-controlled diode and a preparation method thereof, belonging to the technical field of power semiconductor devices. The MOSFET adopts a separation gate design to reduce the switching loss of the device; in order to solve the problem that the reliability of gate oxide is reduced due to a separation gate structure, a P-type buried layer is added to reduce the electric field intensity of a gate oxide layer at the edge of polycrystalline silicon; an N-type diversion layer is added, and current is introduced into a drift region of the device from a channel; in order to reduce the conduction voltage drop of a parasitic body diode of the silicon carbide MOSFET so as to reduce the reverse recovery current of the body diode, a grid control diode based on an accumulation type channel MOS structure is introduced to the other side of a cell of the MOSFET. According to the invention, the accumulation type channel is adopted to fully reduce the conduction loss of the diode, and the source electrode metal is in contact with the polycrystalline silicon of the grid control diode on the side wall by etching and filling the metal, so that the cell size is reduced.

The invention discloses an enclosed pole post. The enclosed pole post comprises two end input pole posts and an intermediate output contact arms, wherein each end input pole post comprises a post body, an end contact arm, wiring terminals and a vacuum tube, wherein the end contact arm is formed at one side of the post body, the wiring terminals are correspondingly formed at an end part of the postbody, the vacuum tube is correspondingly arranged in the post body between the end contact arm and the wiring terminals, and the intermediate output arm is arranged between the two end input post posts and is electrically connected with the corresponding wiring terminals. In the enclosed pole post, the pole post correspondingly to each phase power is of an E-shaped structure, the two traditionalpost posts are respectively output, then are connected in parallel and are output from a middle part after integrating by direct casting, the arrangement number of an output end is reduced, parallel connection after the pole post is output is prevented, the arrangement of the mechanism is reduced, and the whole volume is effectively controlled.

The invention discloses a self-aligned silicon-germanium HBT device to monitor the doping test structure of the germanium-silicon base area after the diffusion of the emission area, which comprises: a rectangular active area, and a layer-by-layer active area located outside the active area. The surrounding rectangular etch-back protection area, base polysilicon, sacrificial emitter window and metal silicide barrier layer; in the length direction of the active region, from the inside to the outside are sacrificial emitter window, metal silicide barrier layer, The boundary of the etch-back protection area and the polysilicon in the base area; in the width direction of the active area, from the inside to the outside are the boundaries of the etch-back protection area, the base area polysilicon, the sacrificial emitter window and the metal silicide barrier layer. The invention can effectively monitor the P-type doping concentration of the epitaxial layer in the self-aligned silicon-germanium HBT device in the electrical test stage of the silicon wafer, can compare the P-type concentration of different menus in the research and development process, and can monitor the silicon-germanium in the mass production process Epitaxy process stability. The process method described in the invention is compatible with the original process, and is simple and easy to implement.

The invention relates to a silicon carbide MOSFET with high anti-surge current capability and integrated gate-controlled diode, which belongs to the technical field of power semiconductor devices. As the withstand voltage of silicon carbide power devices becomes higher and higher, the drift region becomes thicker and thicker, which makes more and more minority carriers recombine in the drift region during the bipolar conduction process of the PIN to form a recombination current. It will all be borne by the channel of the gated diode, which will greatly reduce the reliability of the gate oxide layer of the gated diode. In order to alleviate this problem, a parallel PNP BJT is integrated for the gated diode, and the reverse-biased PN junction is used to reduce the effective base region thickness and reduce the recombination of minority carriers in the base region, that is, reduce the generation of recombination current and alleviate the wave The current density of the channel region in the surge state improves the overall surge current resistance capability of the device.

The invention relates to a silicon carbide split gate MOSFET cell with integrated gate control diode and a preparation method thereof, belonging to the technical field of power semiconductor devices. The MOSFET of the present invention adopts the design of split gate to reduce the switching loss of the device; In order to reduce the reliability of the gate oxide caused by the structure, a P-type buried layer is added to reduce the electric field strength of the polysilicon edge gate oxide layer; an N-type conduction layer is added to introduce the current from the channel to the drift region of the device; In order to reduce the turn-on voltage drop of the parasitic body diode of the SiC MOSFET to reduce the reverse recovery current of the body diode, a gated diode based on the accumulation channel MOS structure is introduced on the other side of the MOSFET cell. The invention adopts the accumulation type channel to fully reduce the conduction loss of the diode, and makes the source metal contact the polysilicon of the gated diode on the sidewall by etching and filling the metal, thereby reducing the cell size.

The invention discloses a trench silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) integrated with a high-speed fly-wheel diode and a preparation method, and belongs to the technical field of power semiconductor devices, the MOSFET is of a trench structure, in order to solve the problem of electric field concentration at the corner of the bottom of a trench, a trench-type gate-controlled diode is added beside the MOSFET, a P-type buried layer is added to the bottom of the trench, and a gate-controlled diode is added to the bottom of the trench. Therefore, the electric field intensity of each other is weakened. In addition, the grid-control diode is connected in parallel with the original body diode of the device, so that the conduction voltage drop of the body diode is greatly reduced, and the loss in a reverse follow current working mode is reduced. In addition, the grid-control diode is a monopole type device and does not have a minority carrier storage effect, reverse recovery current of a body diode can be completely eliminated, and therefore dynamic loss is reduced.

The invention discloses a novel electrical switch insulation device, comprising an insulating cover and an active contact base, wherein the insulating cover is fixedly arranged on the outer surface of the active contact base, a wiring trough is fixedly arranged inside the active contact base, a flexible connecting wire is arranged inside the wiring trough, an active contact is bridged at the upper end of the wiring trough through an insulator, a contact pressure spring is fixedly arranged inside the active contact, a moving arc contact is arranged in a shaft of the contact pressure spring, a static contact base is arranged at the right end of the active contact base in parallel, a connecting arc tube is arranged inside the static contact base, a static arc contact is fixedly arranged at the right end of the connecting arc tube, the electric charge is exported or directly grounded through the flexible connecting wire, and thus the moving arc contact is disconnected from the static arc contact to achieve the purpose of power failure, high-voltage damages of the insulating cover can be prevented, the service life of the insulation device can be prolonged, and the strong practicability can be achieved.

The invention discloses an air conditioner communication control circuit and an air conditioner. The first end of a power supply control loop is connected with a differential mode inductance unit, a first communication module is connected with a common mode inductance unit, the differential mode inductance unit is connected with the first communication module and the common mode inductance unit, the common mode inductance unit is connected with a second communication module, a common connection point of the first end of a short circuit detection unit and the second end of a current detection unit is the first end of the power supply control loop, and the first end of the current detection unit is connected with the first end of a voltage source conduction unit. Parallel connection of differential mode inductors is avoided, so that the communication quality is improved.

The invention discloses an automatic withstand voltage detecting and automatic sorting device of safety equipment. The automatic withstand voltage detecting and automatic sorting device of the safety equipment comprises a box, current guide parts are arranged in the box, an equipment outlet is formed in the lower portion of the box, a rotating shaft is arranged at the position of the equipment outlet, the rotating shaft is connected with a gear motor arranged on the outer side of the box, one end of the rotating shaft is provided with a grounding poking roller in a sleeved mode, the other end of the rotating shaft is provided with a high-voltage poking roller in a sleeved mode, both the grounding poking roller and the high-voltage poking roller are provided with poking plates, both the grounding poking roller and the high-voltage poking roller are provided with elastic conductive components, the box, the current guide parts, the rotating shaft and the poking plates are all made of insulation materials, the equipment outlet is provided with a carrying component, an electric telescopic rod is arranged under the carrying component, and the grounding poking roller is connected with a current detection alarm device through a wire. Compared with the prior art, the automatic withstand voltage detecting and automatic sorting device can accurately measure leaked currents on the surface of the safety equipment, solve the problem that whether the safety equipment is qualified or not is difficult to judge accurately, and guarantee the personal safety of operating personnel and safe and reliable operation of power grids.

The invention relates to the technical field of relays with safety devices, and discloses a relay with a safety device, which comprises an armature and an electromagnetic iron core, a high-temperature-resistant gasket is arranged on the side surface, adjacent to the electromagnetic iron core, of the armature, the high-temperature-resistant gasket is assembled in a way that when a circuit is switched on, the high-temperature-resistant gasket cannot be melted, the ceramic plate, the carbon fiber cloth and the polytetrafluoroethylene plate are all made of high-temperature-resistant materials, deformation caused by high temperature generated by electric arcs is avoided, the electric arcs are prevented from directly puncturing the high-temperature-resistant gasket, the service life of the high-temperature-resistant gasket is prolonged, meanwhile, the ceramic plate, the carbon fiber cloth and the polytetrafluoroethylene plate are all made of non-conducting materials, parallel connection of two circuits can be avoided, meanwhile, the high-temperature-resistant gasket is convenient to replace, if the high-temperature-resistant gasket is damaged, the high-temperature-resistant gasket is unlocked by the locking piece through the driving piece, and a new high-temperature-resistant gasket is replaced, so that replacement of the whole relay is avoided, and the cost is saved.

The invention discloses a novel electrical switch insulation device, comprising an insulating cover and an active contact base, wherein the insulating cover is fixedly arranged on the outer surface of the active contact base, a wiring trough is fixedly arranged inside the active contact base, a flexible connecting wire is arranged inside the wiring trough, an active contact is bridged at the upper end of the wiring trough through an insulator, a contact pressure spring is fixedly arranged inside the active contact, a moving arc contact is arranged in a shaft of the contact pressure spring, a static contact base is arranged at the right end of the active contact base in parallel, a connecting arc tube is arranged inside the static contact base, a static arc contact is fixedly arranged at the right end of the connecting arc tube, the electric charge is exported or directly grounded through the flexible connecting wire, and thus the moving arc contact is disconnected from the static arc contact to achieve the purpose of power failure, high-voltage damages of the insulating cover can be prevented, the service life of the insulation device can be prolonged, and the strong practicability can be achieved.

The invention discloses an energy storage protection device of an energy storage photovoltaic power station, which comprises a box body, a box cover, a heat dissipation assembly and a fixing assembly, and is characterized in that the box cover is mounted on one side of the top end of the box body through a hinge, the heat dissipation assembly is arranged on one side of the box body, and the fixing assembly is arranged in the box body; a mounting block is fixed to one side of the box body, a motor groove is formed in one side of the mounting block, a double-end motor is mounted in the motor groove, heat dissipation grooves are formed in the outer walls, located on the two sides of the motor groove, of the mounting block, and rotating shafts are fixed to the two ends of an output shaft of the double-end motor; according to the invention, the heat dissipation assembly facilitates blowing heat dissipation of the storage battery in the box body or suction of heat in the box body out of the box body, the heat dissipation effect of the storage battery pack is improved, and potential safety hazards caused by overheating are prevented, the fixing assembly facilitates stable fixation of the storage battery, fixation is more convenient and labor-saving, and replacement and maintenance of the storage battery are also facilitated; the working efficiency is improved, and the labor intensity is reduced.

The invention provides an RFID tag apparatus. The apparatus comprises a support part with a polyhedral structure, and at least one RFID tag loop arranged on the support part and comprising at least two antenna coils, wherein the antenna coils are located on different surfaces of the polyhedral structure. According to the RFID tag apparatus, any two antenna coils can be arranged at an acute angle or an obtuse angle in space, so that planes where any two antenna coils are located are prevented from being perpendicular or parallel in space, electromagnetic wave emission directions of the at least one antenna coil and an antenna of a reader can be ensured not to be perpendicular, the phenomenon of a signal blind area can be effectively avoided, and the tag reading efficiency is improved.

The invention discloses a semiconductor laser transmissibility analysis system, which comprises an optical transmitter unit, an optical receiver unit and a signal analysis unit. The optical transmitter unit and the optical receiver unit are arranged on one side or two sides of the medium to be inspected. The optical transmitter unit comprises a semiconductor laser and a first convergent lens; theend of the first convergent lens corresponding to the semiconductor laser is an inclined plane; the optical distance of the principal ray of the laser beam between the semiconductor laser and the first convergent lens is shorter or equal to 7mm; The A-A sectional plane of the middle part of the first convergent lens is a random geometric shape, and the diameter of the smallest cover circle of theA-A sectional plane is bigger or equal to 25mm; the light sent out by the semiconductor laser goes into the medium to be inspected after going through the first convergent lens. The invention also discloses another semiconductor laser transmissibility analysis system.