52results about How to "Reduce read operations" patented technology

A static random access memory (SRAM) cell array is provided that reduces leakage current. The SRAM cell array is configured in a plurality of columns. Each of the columns comprises: a column virtual ground node; a column switch for selectively coupling the column virtual ground node to one of a ground or a nominal low voltage; and a plurality of segments. Each of the segments comprises: a segment virtual ground node; a plurality of SRAM cells including a virtual ground signal coupled to the segment virtual ground node; and a virtual ground switch for selectively coupling the segment virtual ground node to one of either a nominal low voltage or the column virtual ground node. A method for operating the SRAM cell array is also described.

A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO is provided. A current control circuit IC that can set one of two kinds of currents according to read enable signals RD1, RD2 is provided in each sub-amplifier SAMP. The read enable signals RD1, RD2 are generated at timings corresponding to the number of cycles in burst read operation under control of the timing controller. Current in the current control circuit IC is set to be large by the RD1 in burst read operation cycle just after activation of a memory bank, while current in the current control circuit IC is set to be small by the RD2 in the next and subsequent burst read cycles. Accordingly, expansion of an operation margin or reduction of power consumption can be realized in a semiconductor device including a semiconductor memory such as a DRAM.

A novel NVM-based 2T or 2nT NAND-cell for a NAND-array for PLD, PAL and matching functions is disclosed. The preferable NVM cell can be ROM or Flash. The 2T flash cell preferably uses FN for both program and erase operation, while 2T ROM cell preferably to use phosphorus for ROM code implant to get negative Vt0.

A Random Access Memory (RAM) is provided. The RAM includes a plurality of word-line drivers, at least a first tracking transistor and a second tracking transistor. Each word-line driver has an input node receiving a decoding signal, a power node receiving an operation voltage and a driving node driving a word-line. In an embodiment, the first tracking transistor has two channel terminal nodes respectively coupled to the driving node of one of the word-line driver and a channel terminal node of the second tracking transistor; wherein the first tracking transistor has electronic characteristics tracking those of a driving transistor of word-line driver, and the second tracking transistor has electronic characteristics tracking those of pass-gate transistor(s) in each cell of the RAM.

The invention discloses an erasure code operation method. The method comprises the following steps: receiving a request which is sent to an erasure code storage pool by a client and aims at a first object write operation; If the write operation is non-stripe-aligned, sending the first object to a copy storage pool; After it is determined that the write operation of the copy storage pool is completed, making a storage position mark in the erasure code storage pool; If the write operation is stripe-aligned, only writing the first object into an erasure code storage pool; And returning write operation completion information to the client. By applying the technical scheme provided by the embodiment of the invention, the reading operation additionally introduced by non-strip alignment writing is effectively reduced, the expenditure of a storage system is reduced, and the writing operation performance is improved. The invention further discloses an erasure code operation device and equipmentand a storage medium which have corresponding technical effects.

The invention discloses a peak value searching method comprising the following steps of: acquiring a plurality of energy data, screening the acquired energy data commonly by a first group of comparison circuits and a second group of comparison circuits, storing main candidate peak values obtained by the first group of comparison circuits after all energy data are acquired and screened, and storing secondary candidate peak values obtained by the second group of comparison circuits; and screening all the main candidate peak values stored by the first group of comparison circuits and all the secondary candidate peak values stored by the second group of comparison circuits, thus obtaining a peak value. The invention further discloses a peak value searching device which is fast in speed and at least can obtain two peak values by each scanning process, thus being capable of saving power consumption and integrating the peak value searching speed and hardware logic resources; besides, a key circuit of the peak value searching device can be realized only by a series of adders and registers, thus being simple and easy to realize, small in area and low in cost.

The invention provides a distributed storage system-oriented erasure coding write buffer method with a stream detection technology. The method comprises the steps that: when overwriting operations are performed on original data, the length of the first-time overwriting operation is from an initial position of data in a buffer layer to a first alignment point, and the length of the last overwriting operation is from a last alignment point to a termination position of the data in the buffer layer; and the lengths of the overwriting operations between the first-time overwriting operation and the last overwriting operation are all equal to the length between the adjacent alignment points, and the positions are aligned. Multiple write operations are combined in the buffer layer, and the write operations of only the head and tail ends of the data in the buffer layer are non-aligned, so that the read operations caused by the non-aligned write operations under the overwriting condition in an erasure coding storage system are reduced, and the command response speed is increased.

A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.

A magnetic memory is provided in which the margin between a write current and a read current can be reduced. A magnetic storage element includes: a first magnetic layer in which the direction of magnetization can be reversed; a second magnetic layer in which the direction of magnetization is fixed; and a non-magnetic layer which is interposed between the first and second magnetic layers. The write current and the read current are supplied to the magnetic storage element in the stacking direction thereof through a read-write line. Moreover, a bias line which can apply a bias magnetic field to the first magnetic layer during a reading operation is disposed in the vicinity of the magnetic storage element.

The invention provides a data similarity determination method and device and processing equipment, and relates to the field of data processing. The method comprises: obtaining a plurality of hash tables corresponding to a plurality of different hash functions in a one-to-one mode, wherin each hash table comprises at least one hash bucket, a plurality of key values are recorded in each hash bucket,and the hash values of tuples indicated by the key values are the same; dividing a plurality of hash buckets included in the plurality of hash tables into at least one cluster, wherein each cluster comprises a plurality of hash buckets of which the similarity is greater than a similarity threshold; and counting the occurrence frequency of the key value pairs belonging to different data sets in aplurality of hash buckets included in each cluster to obtain a counting frequency corresponding to each key value pair, wherein the counting frequency is positively correlated with the similarity degree of the tuple pairs indicated by the key value pairs. The data similarity determination method provided by the invention is relatively high in operation efficiency.

The invention discloses a method for identifying vehicle orders. The method is implemented based on the dispatching of a low level reader protocol (LLRP) and comprises the following steps of: when a vehicle triggers a first coil, checking vehicles circularly; accumulating received signal strength indicator (RSSI) values of each vehicle in a checking result each time until the vehicle triggers a second coil; and determining the vehicle orders according to the magnitude orders of the accommodated values of the RSSI values of each vehicle. The invention also discloses a device for identifying the vehicle orders. By adopting the method and the device, the orders of the vehicles can be identified accurately when a plurality of the vehicles appear in an antenna coverage area at the same time.

The invention discloses a flash memory data buffer area replacement method based on a page access interval. In the method, all data pages cached in the data buffer area are divided into hot dirty data pages, cold dirty data pages, hot clean data pages and cold clean data pages according to access interval characteristics and reading/writing characteristics of the data pages in the buffer area, and all the data pages are managed by using a primary data buffer area and a secondary data buffer area. When the cold data page access interval is less than the last hot data page in an LRU queue of the buffer area, conversion between cold and hot data pages is performed, and meanwhile, the cold data page in the LRU queue of the primary buffer area is moved into the secondary data buffer area. When the data buffer area page needs to be replaced, the cold clean data pages in the secondary buffer area are preferentially shifted out according to an LRU rule, and the influence on performance and service life of a flash memory due to too many times of write-back operations of the dirty data pages of the data buffer area is reduced under the premise of ensuring a hit rate.

A semiconductor storing apparatus capable of shortening a ECC processing time of a readout operation is provided, including a flash memory includes: a memory cell array; a page buffer/sense circuit holding data read out from a selected page of the memory cell array; an error correcting code circuit receiving data from the page buffer/sense circuit and holding error address information of the data; an output circuit selecting data from the page buffer/sense circuit based on a column address, and outputting the selected data to a data bus; and an error correction part correcting data of the data bus based on the error address information.

The invention provides a direct displaying method and device for video decoding. The method comprises the following steps: after video source data stream of DDR (double data rate) is read, a macro block of each image is decoded, and location information of the macro block and image data after decoding are obtained; the location of the macro block in a maximum macro block is judged, and a maximum macro block cache unit is filled with image data obtained after the sub macro block is decoded according to the location information; data volume is controlled to be sent to two macro block slice cache units for circulated filling until the whole image is decoded; which macro block slice cache unit is read is selected according to the effective full state of the two macro block slice cache units, and image line data are processed and sent to a screen for display by the aid of a display control unit. According to the direct displaying method, DDR write-back operation of a video decoder and read operation of a display controller on video images in the DDR in the traditional data path are saved, the requirement of the whole decoding display for the bandwidth of the DDR is reduced greatly, and the cost and power consumption of products can be reduced greatly.

The invention discloses a data processing method and device based on a solid state disk array and a cache. The method includes: receiving a writing request, and instructing solid state disks and the cache to write data corresponding to the writing request; indicating the data, which is stored in the cache and written by each chip for the last time, through a hash table; preferentially replacing data blocks, which are in the cache and of a first stripe, when the cache is fully written, wherein the included data blocks which are in the cache and of the first stripe are most, and the chips are instructed to calculate verification information of the first stripe and write the verification information into the chips when the first stripe is replaced; and when a failure chip exists, restoring the data, which is written in the failure chip for the last time, through the hash table, and restoring data on a corresponding logical address in the failure chip through the data and the verification information in the non-failure chips. According to the method, verification block updating is delayed through the cache, the small-writing performance of a chip array is improved, and the problem of erasing frequency is alleviated.

The present invention relates to a data output apparatus for a memory device, and more particularly to, a data output apparatus improved a data transferring speed by re-amplifying a data amplified by a bitline sense amplifier and transferring it to global input/output lines. The data output apparatus comprises: first and second local data lines for receiving data transferred from a pair of bitlines of a memory device; an amplifier interposed between the first and second local data lines; a first CMOS buffer means for receiving data on the first local data line; a second CMOS buffer means for receiving data on the second local data line; a first latch means for holding an output signal of the first CMOS buffer means; a second latch means for holding an output signal of the second CMOS buffer means; and a pull-up transistor and a pull-down transistor coupled between a driving voltage and a ground terminal in series. Here, an output signal of the first latch means is applied to a gate of the pull-up transistor, while an output signal of the second latch means is applied to the pull-down transistor.