The invention discloses a
semiconductor film performance cooperative control method and
system based on multi-parameter
coupling, and belongs to the technical field of
semiconductor material manufacturing, and the method specifically comprises the steps: determining a control parameter set containing
plasma power density and other parameters, and building a multi-parameter
coupling response model; generating sample points by using Latin
hypercube sampling, quantifying a parameter interaction effect, and forming a dynamic weight matrix in combination with a
graph model;
monitoring data such as
plasma emission spectrum intensity ratio in real time, comparing the data with a model predicted value, and correcting the model; a multi-objective
optimization problem is constructed based on the correction model and the dynamic weight matrix, and optimal parameter configuration is solved by using a
conjugate gradient method; alternately applying a high-frequency pulse and a relaxation stage according to the optimal configuration, and modulating the
pulse frequency according to a Fibonacci sequence; and finally, based on the substrate temperature, planning a temperature rise path by using an S-shaped curve, superimposing
cosine modulation, and introducing oscillation compensation gas to compensate the reactant concentration deviation, thereby realizing accurate optimization of the material preparation process.