The application discloses a
semiconductor thin film performance synergic control method and
system based on multi-parameter
coupling, and belongs to the technical field of
semiconductor material manufacturing, and specifically comprises the following steps: determining a control parameter set containing parameters such as
plasma power density, establishing a multi-parameter
coupling response model; generating sample points by using Latin
hypercube sampling, quantifying parameter interaction effects, combining a
graph model to form a dynamic weight matrix;
monitoring data such as
plasma emission spectrum intensity ratio in real time, comparing with
model prediction values and correcting the model; constructing a multi-objective
optimization problem based on the corrected model and the dynamic weight matrix, and solving the optimal parameter configuration by using a
conjugate gradient method; alternately applying high-frequency pulses and relaxation stages according to the optimal configuration, and modulating the
pulse frequency according to a Fibonacci sequence; finally, planning a temperature rising path by using an S-shaped curve based on the substrate temperature, superimposing
cosine modulation, passing in oscillation compensation gas to compensate for the deviation of reactant concentration, and realizing accurate optimization of a material preparation process.