This invention provides an acidic chemical mechanical
polishing slurry for
gallium arsenide substrates and its application, belonging to the field of chemical mechanical
polishing technology. The
polishing slurry comprises, by weight percentage, 0.5–5 wt% modified
cerium oxide abrasive, 0.1–3 wt%
peracetic acid, 0.05–2 wt%
urea peroxide, and the balance deionized water, with a pH value of 3.0–5.0; wherein the modified
cerium oxide abrasive is nano-
cerium oxide particles with surface-grafted
organic acid functional groups, with an average particle size of 20–80 nm. The acidic chemical mechanical polishing
slurry for fine polishing of
gallium arsenide substrates provided by this invention, by employing a dual oxidant
system composed of
peracetic acid and
urea peroxide, combined with modified
cerium oxide abrasive with surface-grafted
organic acid functional groups, balances
surface reaction stability, abrasive dispersibility, and low-load mechanical removal requirements under acidic conditions, thereby helping to reduce surface scratches, particle residue, and subsurface damage depth, and improving the
surface integrity of
gallium arsenide substrates after fine polishing.