141results about "Iron-filament ballast resistors" patented technology

An insulator 6 for holding electrode wires 4 is provided between a thermistor element 3 and a sheathed pin 5 which is a wiring, and the electrode wires 4, which are inserted into hole portions 6a of the insulator 6, are held therein not bonded to the insulator, whereby the vibration resistance of the electrode wires of the thermistor element is improved so that breaking of the electrode wires is prevented.

In a temperature sensor having a temperature sensitive element, a sheath pin connected to the temperature sensitive element, and a cover case. The cover case, filled with a filler, accommodates the temperature sensitive element and the sheath pin. A hardening temperature of the filler is not less than an actual usage environment of the temperature sensor. Another temperature sensor has a temperature sensitive element exposed at a high temperature of not less than 750° C., a thermistor element, a sheath pin, an anti-vibration filler, and a metal cover case fixed to an end part of the sheath pin. The metal cover case accommodates the sheath pin and the thermistor element. The filler is made of a porous insulation material having a pore ratio within a range of 30 to 70% and filled around the thermistor element in the metal cover case.

A temperature sensor includes an autonomous sensing element and a plurality of conductive wires connected to the sensing element. An electrical insulator surrounds the sensing element and the conductive wires for firmly holding the sensing element and conductive wires. The insulator includes substantially crushed and compacted powder insulation. A tube encases the insulator in a compressed manner and has a first end, a second end, a first portion having a first inside diameter located in the proximity of the first end and a second portion having a second inside diameter. The second inside diameter being greater than the first inside diameter. The sensing element is positioned within the second portion of the tube. Methods of manufacturing a temperature sensor are also included.

An end seal for a temperature sensing probe. Electrical interface wiring is passed through a restraining element and is operatively coupled to a temperature sensing element or heater element mounted in the sheath. The sheath is formed around the restraining element in a shape that provides a net force inward as temperature variations expand and contract the restraining element.

Described are a thin-film temperature-sensitive resistor material which comprises, at a temperature-sensitive resistor portion, a mixed crystal of a nitride and oxide of a transition metal such as vanadium preferably, that represented by the formula: MNxOy wherein 0<x<1, and 2</=y</=13/6, simultaneously exhibits a high temperature coefficient of resistance and a low specific resistance at about room temperature, and has excellent sensitivity at about room temperature; and a process for the production of a thin-film temperature-sensitive resistor material, which comprises forming its temperature-sensitive resistor portion by using a gas-atmosphere composed mainly of a nitrogen gas preferably, a mixed gas composed of nitrogen, argon and oxygen, and has a flow rate ratio of nitrogen to oxygen (nitrogen/oxygen) of 14/1 to 23/1.

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

A Platinum temperature sensor comprises a ceramic substrate and a platinum thin-film resistor applied to said ceramic substrate, a ceramic cover layer and a connecting layer generated from a ceramic green layer by pressure and temperature treatment. The ceramic cover layer is connected with the ceramic substrate in such a way via the connecting layer that the platinum thin-film resistor is sealingly encapsulated with regard to the environment.

A temperature probe (<bold>10</highlight>) includihermally conductive housing (10) and a temperatureld>10</highlight>) and a temperature sensor (<boldment (22) mounted therein. The temperature sensor element (<bold>22</highlight>) mounted therein. Ta thermally conductive potting material (50). Signunted at one end of the housing (<bold>12</highlig element (22) extend through an elongated insulatebold>50</highlight>). Signal wires (<bold>36</high) opposite the sensor (18). Changes in the temperant (<bold>22</highlight>) extend through an elonga resistive temperature element (22) through the cot of an end of the housing (<bold>12</highlight>) the probe (10) is combined with a pressure transds in the temperature of the housing are quickly trnsing device. old>22</highlight>) through the conductive potting material (<bold>50</highlight>). In one embodiment, the probe (<bold>10</highlight>) is combined with a pressure transducer (<bold>60</highlight>) to provide a pressure and temperature sensing device.

A device for heating a semiconductor wafer comprises a heating element arranged to conduct heat toward the wafer. The heating element can extend along a heating element path. An RTD sensor loop can extend along an RTD sensor path. The RTD sensor path can be positioned along the heating element path to measure a temperature that corresponds to the heating element. The RTD sensor loop can measure an average temperature along the heating element. Portions of the RTD sensor can be interlaced between portions of the heating element. The heating element path can be arranged with interstices between portions of the heating element path, and portions of the RTD sensor path can be positioned within the interstices to interlace the RTD sensor loop with the heating element. The RTD sensor loop can comprise a soft metal that is resistant to oxidation and extends along the RTD sensor path.

An RTD system includes multiple pluralities of RTDs and RTD bank assembly to which each plurality of RTDs are connected. Each RTD bank assembly includes a current source for the RTDs connected thereto, a multiplexer switching system for switching the current source successively between the RTDs, and a measurement function for measuring the voltage drop across the RTDs produced by the current source. The system includes a circuit for determining resistance of the RTD from the current applied thereto and the voltage drop there across. The system further includes a plurality of low pass filters associated, respectively, with each RTD, wherein the low pass filters are charged before the voltage measurement is made. The system includes a precharging arrangement where the low pass filter associated with the next RTD in a voltage sampling sequence is precharged, so that the delay between sampling of the voltage from the low pass filters associated with successive RTDs is significantly reduced. The system further includes low pass filters associated with calibration resistors which permit sampling of voltage values from the RTDs prior to the low pass filters associated therewith being fully charged, without error which would otherwise occur.

The present invention provides a strain gauge comprising a resistive layer. The resistive layer comprises metallic or semiconducting nanoparticles or aggregates thereof in which the nanoparticles or aggregates thereof are separated by insulating and/or semiconducting material.

The present invention provides an overheat protection device which is capable of effectively preventing a secondary battery from overheating. In the overheat protection device (20), a variable resistive element(s) (11) of which resistance varies depending on a temperature is located on and thermally combined with a certain position(s) of an electrical system (1), and a switching element (15) for controlling a current depending on an applied voltage thereto is arranged so as to control the current flowing through the electrical system (1). When the certain position of the electrical system (1) comes to be under a high temperature condition, the variable resistive element (11) interrupts the current flowing through the electrical system (1) by changing the applied voltage to the switching element (15).

A flip-chip flow sensor has electrical components, such as temperature sensors and a heater, on the top of a substrate and has a channel formed in the bottom of the substrate. The channel is separated from the substrate's top by a membrane of substrate material. A fluid flowing through the channel is separated from a heater, upstream temperature sensor, downstream temperature sensor, bond pads, and wire bonds by the membrane. Heat flows through the membrane easily because the membrane is thin. As such, the electrical elements of the flow sensor, the bond pads and the wires are physically separated from a fluid flowing through the channel but can function properly because they are not thermally isolated.

A sensor can be configured to generally include a flow channel block having a flow channel formed therein, and a sensor chip for sensing fluid flow, wherein a fluid in the flow channel surrounds the sensor chip. Alternatively, the sensor chip can be fastened at one side to a substrate and on another side of the substrate to a core tube inserted into the flow channel. This core tube provides electrical insulation and corrosion protection to the sensor chip, reduces flow noise, (and by the non-intrusive nature of the measurement) essentially eliminates the risk of fluid leakage, and maintains the fluid super-clean and contamination-free while improving structural integrity for the thermal measurements derived from the sensor chip. The use of such a core tube configuration also can protect the sensor from corrosion, radioactive or bacterial contamination, overheating, or freeze-ups. Such a core tube configuration also enables the core tube to be detachable and disposable, without requiring the replacement of the more costly sensor chip with its electronics and calibration.

A securing structure for securing a measuring member having a sensor element and a lead elongated from the sensor element to a subject to be measured, the securing structure includes the measuring member including a measuring section having a covered portion in which a part of the lead elongated from the sensor element and having a predetermined length is covered by a material having a rigidity larger than that of the lead, the covered portion being folded toward the side of the lead elongated from the covered portion to produce a folded end portion; and the subject to be measured having an insertion section through which the measuring section is inserted from the side of the folded end portion, a container section which contains the measuring section inserted through the insertion section, and a contact section with which the head portion of the covered portion comes into contact and by which the measuring section is prevented from falling out, when the lead is pulled.

For production of a high-temperature sensor, in which a platinum resistance film is applied on a metal-oxide substrate, in particular sapphire or a ceramic plate, and a ceramic intermediate layer is laid on the resistance film, a self-supporting cover, in particular a ceramic or glass-ceramic cover, is bonded on the ceramic intermediate layer or a glass ceramic is mounted on the intermediate layer over its entire surface. Advantageously, the glass ceramic is electrically conductive or an ion conductor above 750° C. and is laid on up to the cathode of the resistance film up to beyond the intermediate layer. In particular, the cover is bonded with a metal-doped glass ceramic, which is laid on the cathode of the resistance film up to beyond the intermediate layer. Preferably, the electrically insulating intermediate layer is coated with a glass ceramic or a glass ceramic doped with metal, which coating has a resistance of at most one megaohm per square at 850° C. or above.

A film-like temperature sensor for more accurately measuring the temperatures at plural locations on the surface of a semiconductor wafer comprises a base film made of an insulating material; plural thin-film thermal elements for sensing temperature; plural thin-film leads, connected to the thermal elements; and plural thin-film terminals connected to the ends of the leads. The thermal elements, leads, and terminals are integrally formed either on the surface or in the thickness of the base film. The base film has a flat shape like a paddle, and comprises a head portion to be attached to the surface of a semiconductor wafer, and a strip-shaped tail portion extending outwardly of the semiconductor wafer. The plural thermal elements are arranged on the head portion in the form of either a concentric circle, spiral, matrix, or raster, and the plural terminals are arranged on the tail portion.

Providing a probe for an electronic clinical thermometer, which can measure a surface temperature and a deep body temperature of a human body securely in short time, the probe includes a cylindrical housing, a bottomed metal pipe fitted into a top end of the cylindrical housing, and a substrate having two thin-film heat-sensitive elements arranged perpendicularly on an inner wall of the bottomed metal pipe so as to fix one side edge of the substrate tightly on the inner wall. By measuring heat flux between the two thin-film heat-sensitive elements, the surface and the deep body temperatures of the human body can be predicted by applying the measured values into a heat conduction equation without waiting the sensor to reach in heat balance.

The operating temperature of a gas sensor capable of sensing a gas or a gas composition at a high temperature, for example 1000° C. is maintained constant over the entire volume of a gas sensor layer or function layer (4) secured to a sensor carrier section of the gas sensor by supplying heat to the gas sensor layer (4) in such a way that varying heat dissipations in the sensor carrier section are compensated. For this purpose, an electrical heater for heating the gas sensor layer (4) has individual heater sections with different heating resistance values which depend on a spacing between any individual heater section and the tip of the sensor carrier section.