The invention discloses a
semiconductor laser with adjustable
wavelength. The
semiconductor laser comprises an active region, a phase region, a
grating region and a phase shift region manufactured in the
grating region, wherein the phase region is composed of a second
electrode, a second cladding, a first
waveguide layer and a second substrate when being viewed from top to bottom; seen from top to bottom, the first
grating region is composed of a third
electrode, a third cladding, a first grating layer, a second
waveguide layer and a third substrate; the phase shift region is composed of a fourth
electrode, a fourth cladding, a third
waveguide layer and a fourth substrate from top to bottom; the structure of the second grating area is completely consistent with that of the first grating area; a left end face of the
laser is a cleavage surface, and output light of the laser is emitted from the cleavage surface; and a right end face of the grating area reduces reflection of the end face towards the interior of the laser through the antireflection
film coating. According to the laser provided by the invention, high
modulation bandwidth is realized by introducing a
photon resonance effect, a
wavelength tuning function can also be realized, and requirements of a next-generation
optical communication system on a high-performance high-speed directly-modulated
wavelength-adjustable device are met.