The embodiment of the present disclosure relates to the
semiconductor field, and provides a manufacturing method of a
semiconductor structure and the
semiconductor structure, which comprises the following steps: providing a first
wafer, the first
wafer has opposite first and second surfaces, and the first
wafer has a first conductive structure, one end of the first conductive structure is located in the first wafer; performing a
thinning treatment on the first wafer in a direction perpendicular to the first surface of the second surface until the thickness of the remaining first wafer reaches a preset thickness and the one end of the first conductive structure is exposed, the
thinning treatment comprises at least one film layer peeling treatment, and the film layer peeling treatment comprises the following steps: performing
hydrogen ion implantation on the second surface to form a
hydrogen ion containing layer in the first wafer; and performing a heating treatment on the first wafer to make the
hydrogen ion containing layer fall off.