142results about How to "Narrow distance" patented technology

An evaporation apparatus with high utilization efficiency for EL materials and excellent film uniformity is provided. The invention is an evaporation apparatus having a movable evaporation source and a substrate rotating unit, in which the space between an evaporation source holder and a workpiece (substrate) is narrowed to 30 cm or below, preferably 20 cm, more preferably 5 to 15 cm, to improve the utilization efficiency for EL materials. In evaporation, the evaporation source holder is moved in the X-direction or the Y-direction, and the workpiece (substrate) is rotated for deposition. Therefore, film uniformity is improved.

A display apparatus comprises a display element, a backlight apparatus provided behind the display element and having a metal case, and a housing accommodating the display element and the backlight apparatus. In the display apparatus, electric wires for providing power to the backlight apparatus extend between the metal case of the backlight apparatus and the housing, and at least one opening is provided in the metal case in a part where the electric wires extend.

Disclosed is a method for producing a multicrystalline silicon substrate for solar cells comprising: a metal deposition step for depositing such metal particles as platinum and silver on the surface of the substrate by electroless-plating chloroplatinic acid or silver perchlorate; a boring step for subjecting the substrate surface to etching in a solution containing at least one of hydrofluoric acid and hydrogen peroxide; and a step for removing a stain layer by immersing the substrate into an alkaline solution. A multicrystalline silicon substrate having a lower reflectance is provided at a lower cost.

A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed between the pinned and free magnetic layers. A current flows perpendicularly to the film plane of the GMR. The magnetoresistive head further includes an antiferromagnetic layer (an insulating AF of Ni—O or α-Fe2O3) provided in the rear of the GMR in a height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer which extends in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by the exchange coupling magnetic field in the height direction.

In a photoelectric transfer device having a semiconductor electrode composed of semiconductor nanoparticles and an electrolyte layer between a pair of transparent conductive substrates, a transparent conductive substrate at the light-receiving side is made by stacking a transparent substrate, conductive wiring layer and a metal oxide layer in order from the light-receiving side and having sheet resistance equal to or lower than 10 Ω / □. The metal oxide layer is made of an In—Sn composite oxide, SnO2, TiO2, ZnO, or the like.

A choke including a core and a hollow coil is provided. The core includes a first core body and a second core body. The first core body includes a pillar. The second core body is a flat plate and has an opening. An end of the pillar is suitable to be disposed in the opening and joined to the same. The hollow coil is fitted on the pillar.

Disclosed is a method for producing a multicrystalline silicon substrate for solar cells comprising: a metal deposition step for depositing such metal particles as platinum and silver on the surface of the substrate by electroless-plating chloroplatinic acid or silver perchlorate; a boring step for subjecting the substrate surface to etching in a solution containing at least one of hydrofluoric acid and hydrogen peroxide; and a step for removing a stain layer by immersing the substrate into an alkaline solution. A multicrystalline silicon substrate having a lower reflectance is provided at a lower cost.

The LED module comprises a flexible wiring substrate and surface mounting type LED packages. The flexible wiring substrate is formed at its surface with power supply terminals which comprises a first electrode pad and a second electrode pad, and is formed with a patterned wiring being electrically connected to the patterned wiring. The surface mounting type LED package comprises an LED chip and a mounting substrate. The mounting substrate is formed at its front surface with a recess, and its rear surface with a first connection electrode and the second connection electrode which are electrically connected to the first electrode pad and the second electrode pad, respectively when the mounting substrate is mounted on the flexible wiring substrate. The LED chip is disposed within the recess so as to receive the electrical current through the outside connection electrode and the power supply terminal.

Provided are an information display device and a character string converting method that improve operability at the time of changing a character string on a display screen.The information display device is configured to have: a display screen 12 for displaying a character string; a touch panel controller 27 that detects an operation position; a character string selecting part 34 that, when two different operation positions are detected, on the basis of a result of the detection of the operation positions, selects a character string on the display screen 12; and a character string converting part 36 that, when a distance between the two operation positions is changed, converts the character string selected by the character string selecting part 34 depending on whether the change is a change that causes the distance between the operation positions to be narrowed or enlarged. For example, the character string converting part 36 converts a full-width character in the character string to a half-width character in the case where the change in distance between the two operation positions is the change that causes the distance between the operation positions to be narrowed, and converts a half-width character in the character string to a full-width character in the case where the change is the change that causes the distance between the operation positions to be enlarged.

Provided is a liquid crystal display apparatus according to an exemplary embodiment of the present disclosure. The liquid crystal display apparatus includes: a liquid crystal display panel; a first chassis; a second chassis; a circuit unit; a flexible substrate; a shield unit; and a pem-nut. The shield unit is disposed to surround at least a part of the flexible substrate and circuit unit and be bonded to at least a part of the flexible substrate. The pem-nut is exposed through a hole penetrating the shield unit and the circuit unit, and a bolt-insertion part is disposed. A top side of the pem-nut is positioned to be higher than a top side of the circuit unit. In the liquid crystal display apparatus according to an exemplary embodiment of the present disclosure, the reliability of the liquid crystal display apparatus is improved.

A three-dimensional measurement apparatus of a slit light (or pseudo slit light) projection type that is adapted to prevent deterioration of measurement accuracy and to be easily miniaturized. When there is a disturbance in a region A in a distribution of pixels whose detected luminances exceed a threshold, a detected position C3 determined from a weighted average of luminances of pixels selected under a threshold condition along a scanning line traversing a bright portion image and liable to be deviated from a correct detected position line B-B is excluded from data to be used for the three-dimensional measurement, whereas detected positions C1, C2 are adopted that are determined so as to correspond to scanning lines on each of which pixels whose number falls within an allowable range are detected. The allowable range varies from Nav×αmin to Nav×αmax or from Nav−β to Nav+γ, where Nav is an average of the numbers of pixels detected on scanning lines for each of which at least one pixel is determined, and αmin, αmax, β, and γ are minimum proper ratio, maximum proper ratio, subtract number of pixels, and add number of pixels, respectively, which are set in advance as parameters.

Aiming at realizing high breakdown voltage and low ON resistance of a semiconductor device having the super-junction structure, the semiconductor device of the present invention has a semiconductor substrate having an element forming region having a gate electrode formed therein, and a periphery region formed around the element forming region, and having an field oxide film formed therein; and a parallel p-n layer having n-type drift regions and p-type column regions alternately arranged therein, formed along the main surface of the semiconductor substrate, as being distributed over the element forming region and a part of the periphery region, wherein the periphery region has no column region formed beneath the end portion on the element forming region side of the field oxide film and has p-type column regions as at least one column region formed under the field oxide film.

A method for forming a flash memory device having a local interconnect connecting source regions of a plurality of transistors within a sector allows for a highly selective wet etch of a dielectric region overlying the source region. An embodiment of the method comprises the use of an etch-resistant layer covering various features such as any gate oxide remaining over the source region, spacers along sidewalls of the transistor stacks, and a capping layer of the transistor. An in-process semiconductor device resulting from the inventive method is also disclosed.

A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

A fractured clavicle fixing band comprises a back rest 1 rendered in contact with a back of a user along a backbone when used, a pair of shoulder belts 2 connected an end portion of the back rest, stretched as passed respectively from shoulders to axillae when used, and a chest front belt 3 for pulling and fastening, in front of a chest of the user, the pair of shoulder belts in a direction to narrow a distance therebetween, in which the front chest belt 3 is made of a nonflexible material. An orderly reset region of the user can be supported by the antagonistic action of a fastening force with the shoulder belt 2 and a fastening force with a chest belt 3.

A lamp socket includes a socket body, a power supplying member and a socket cover. The socket body has a connecting hole formed in the socket body. The connecting hole is opened. The power supplying member is disposed in the connecting hole and an electrode supporting terminal having a supporting groove, so that supports an electrode portion of a lamp disposed in the power supplying member. The socket cover is partially and separably insertable in the connecting hole, to fix the electrode portion of the lamp. A backlight assembly includes a receiving container, a plurality of lamps and lamp sockets.

A two-unit zoom lens system includes in order from an object side thereof, a first lens unit G1 having a negative refracting power, a second lens unit G2 having a positive refracting power, and an aperture stop which is disposed between the first lens unit G1 and the second lens unit G2, and which moves integrally with the second lens unit. At a time of zooming from a wide angle end to a telephoto end, a distance between the first lens unit G1 and the second lens unit G2 is narrowed. At the time of zooming from the wide angle end to the telephoto end, the first lens unit G1, after moving toward an image side, moves toward an object side. At the time of zooming from the wide angle end to the telephoto end, the second lens unit G2 moves toward the object side. The second lens unit G2 includes in order from the object side thereof, a front sub-unit having a positive refracting power, and a rear sub-unit having a negative refracting power. The two-unit zoom lens system satisfies predetermined conditional expressions.

An inkjet recording apparatus includes a recording head; a carriage to which the recording head is detachably mounted; and a first head protection member that is arranged on the carriage; wherein the recording head is positioned with respect to the carriage in a relative movement direction by moving the recording head relative to the carriage until a first position reference plane of the recording head and a second position reference plane of the carriage come into contact; the first head protection member is arranged at both sides in the relative movement direction of a nozzle face of the recording head and protrudes further than the nozzle face; and the first head protection member is movable with respect to the carriage in the relative movement direction and moves along with the recording head when the recording head moves relative to the carriage.

A mobile device holder includes a holding portion having a pair of opposed holding portion arms, a lower edge at a base of the holding portion, an upper pivot assembly affixed to the holding portion and configured to pivot about an upper axis extending through a plane defined between the pair of opposed holding portion arms, a lower pivot assembly affixed to the upper pivot assembly and configured to pivot about a lower axis generally perpendicular to the upper axis, and a base affixed to the lower pivot assembly, wherein the holding portion, lower edge and upper pivot assembly are pivotable about the lower axis relative to the base.

A semiconductor light emitting device includes: a first conductivity type semiconductor layer; a light emission layer; a second conductivity type semiconductor layer; a conductive portion of a first polarity electrically connected to the first conductivity type semiconductor layer; and a conductive portion of a second polarity electrically connected to the second conductivity type semiconductor layer. At least one of the conductive portion of the first polarity and the conductive portion of the second polarity includes a plurality of separated electrode portions arranged on a light emission surface. The closer the positions of the separated electrode portions are to a center point of the light emission surface, the separated electrode portions are provided sparsely, and the farther the positions of the separated electrode portions are from a center point of the light emission surface, the separated electrode portions are provided densely.

A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.

To provide a semiconductor device with large storage capacity and low power consumption. The semiconductor device includes an oxide semiconductor, a first transistor, a second transistor, and a dummy word line. A channel formation region in the first transistor and a channel formation region in the second transistor are formed in different regions in the oxide semiconductor. The dummy word line is provided to extend between the channel formation region in the first transistor and the channel formation region in the second transistor. By applying a predetermined potential to the dummy word line, the first transistor and the second transistor are electrically isolated in a region of the oxide semiconductor which intersects the dummy word line.

A separator for a lead-acid battery, a pasting paper for a lead-acid battery, a plate for a lead-acid battery, and a lead-acid battery using the same are disclosed. The separator comprises a microporous sheet containing a heavy metal adsorbent comprising a rare earth compound having high heavy metal adsorbability in a neutral region and low heavy metal adsorbability in an acidic region, wherein the heavy metal adsorbent is unevenly distributed in a thickness direction of the sheet, thereby forming the heavy metal adsorbent-containing layer extending in a horizontal direction of the sheet and a layer which does not substantially contain the heavy metal adsorbent.

A frame structure for a motorcycle includes a front fork which journals a front wheel and that is capable of being steered and supported by a head pipe. Front end portions of a pair of right and left pipe members are connected contiguously to the head pipe and extend downwardly and rearwardly from the head pipe. The pair of right and left pipe members each have a substantially prismatic cross sectional shape and are each bent at their longitudinally intermediate portions so as to be outwardly convex with respect to the sides of the motorcycle frame. An engine is disposed between lower portions of both pipe members in an engine mounting space. The present invention narrows the distance between the upper portions of the right and left pipe members and effectively increases the space between the lower portions of the pair of right and left pipe members.

The present invention provides a semiconductor device that can suppresses poor connection caused by the variation of the heights of bumps during reflow heating, can be applied to a narrow array pitch, and can freely adjust the heights of the bumps.