The invention provides a
semiconductor device and a forming method, a starting circuit and a
switching power source of the
semiconductor device. The
switching power source comprises the starting circuit. The
semiconductor device comprises a P-type semiconductor substrate, an N-type drift region, an
oxide layer, an intrinsic
polycrystalline silicon layer, a
doping polycrystalline silicon layer and a
metal plug, wherein a source
electrode and a drain
electrode of a negative threshold field-effect tube are arranged at the two ends of the N-type drift region, the source
electrode and the drain electrode are exposed out of the
oxide layer, the intrinsic
polycrystalline silicon layer is arranged at one end, close to the source electrode, of the
oxide layer, and the
doping polycrystalline
silicon layer is arranged at one end, close to the drain electrode, of the oxide layer. The intrinsic polycrystalline
silicon layer and the oxide layer form a grid electrode of the negative threshold field-effect tube, the
doping polycrystalline
silicon layer forms a
resistor connected with the grid electrode, and the
metal plug is connected with the drain electrode of the negative threshold field-effect tube and is adjacent to the doping polycrystalline silicon layer. In the
semiconductor device, the
resistor connected with the drain electrode and the grid electrode of the negative threshold field-effect tube is formed at the position, arranged between the drain electrode and the grid electrode, of the semiconductor substrate and shares the
metal plug with the drain electrode, the area of a
chip is saved, metal
interconnection is reduced through port sharing, and the reliability of the
semiconductor device is improved.