1 results about "Shear strain rate" patented technology

This invention relates to a FOW (Field-Write Object) stacked packaging structure with bonding grooves. This FOW stacked packaging structure modifies the traditional form of the FOW film, obtaining a FOW film with bonding grooves through exposure and development. After the FOW film with bonding grooves is bonded to a second chip, the FOW film with bonding grooves is vertically bonded to a first chip and the bonding wires connecting the first chip to the substrate. The bonding wires connecting the first chip to the substrate are inserted into the bonding grooves of the FOW film. Heating melts and reshapes the bonding grooves, allowing the FOW film to complete the bonding and stacking process between the first and second chips, thus realizing this FOW stacked packaging structure with bonding grooves. In response to the trend of increasingly smaller bonding wire diameters, this design expands the applicability of FOW films, reducing requirements on their flowability, shear stress, and shear strain rate, thus improving their versatility. This FOW stacked packaging structure with bonding wire grooves ensures that the bonding wires connecting the first chip to the substrate are not subjected to the stress applied during chip bonding, significantly reducing defects such as loose connections and wire punching. Furthermore, this FOW stacked packaging structure with bonding wire grooves allows for the selection of more long-shelf-life FOW materials, reducing additional costs incurred due to film expiration and improving the utilization rate of FOW films.