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49results about How to "Overvoltage protection" patented technology
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LED driving device of overvoltage protection and duty control
ActiveUS20070247450A1Overvoltage protectionElectroluminescent light sourcesDc-dc conversionOvervoltageElectricity
An LED driving device comprises a PWM IC including an RT / CT terminal operated by a power voltage and generating and outputting a sawtooth wave voltage of a predetermined frequency, a COMP terminal to which a comparison voltage compared with the sawtooth wave voltage is inputted, and an output terminal generating and outputting a pulse signal turned off in a section in which a level of the sawtooth wave voltage is higher than a level of the comparison voltage and turned on in a section in which the level of the sawtooth voltage is lower than the level of the comparison voltage. The LED driving device sets up the comparison voltage inputted to the COMP terminal of the PWM IC to be 0 when an error voltage corresponding to a difference between a both end voltage of an LED array and a predetermined reference voltage is less than a predetermined level.
Owner:SAMSUNG ELECTRONICS CO LTD
Semiconductor Device
ActiveUS20130155560A1Increase the resistance valueDecreasing variation rateBatteries circuit arrangementsBoards/switchyards circuit arrangementsPower semiconductor deviceOvervoltage
In a semiconductor device, a surge voltage is lowered on turning OFF of a switching element, and output current is reduced on turning ON of the switching element in a non-saturated condition to achieve a reduced amount of self-heating. The semiconductor device can comprise a semiconductor switching element, an overvoltage protection circuit, and a resistance circuit to transmit a control signal for turning the switching element ON and OFF to a control terminal of the switching element. The semiconductor device can further comprise a voltage detecting switch that receives a signal corresponding to a voltage appearing at the output terminal of the switching element on turning OFF of the switching element, and a gate resistor change-over switch that operates according to a voltage of a timing capacitor connected to the output side of the voltage detecting switch to increase a resistance value of the resistance circuit.
Owner:FUJI ELECTRIC CO LTD
Voltage source converter for high voltage direct current power transmission
InactiveUS8345457B2Low costReduce effortAc-dc conversion without reversalElectric power transfer ac networkTransformerHigh-voltage direct current
A high voltage AC / DC or DC / AC power conversion system including a voltage source converter with at least two series-connected converter valve bridges, at least two reactors, where each of the reactors is connected to one of the AC phase terminals of the at least two bridges and at least one transformer connected to an AC supply voltage. In order to block a DC voltage from the at least one transformer, one of at least two capacitors is connected in series with each of the at least two reactors and is connected between the corresponding reactor and the at least one transformer.
Owner:ABB POWER GRIDS SWITZERLAND AG
Semiconductor device
ActiveUS20060220166A1Inhibit deteriorationOvervoltage protectionMagnetotherapy using permanent magnetsOrthopedic corsetsSchottky barrierDevice material
In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, a P-type diffusion layer is formed to be connected to a P-type diffusion layer and is extended to a cathode region. A metal layer to which an anode electrode is applied is formed above the P-type diffusion layer, thereby making it possible to obtain a field plate effect. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.
Owner:SEMICON COMPONENTS IND LLC
Photovoltaic arrays, in part having switches for short-circuiting of modules
InactiveUS20110203635A1Reduce cable costsOvervoltage protectionPV power plantsPhotovoltaic energy generationPower inverterLow voltage
A photovoltaic generator is provided that has at least one string of multiple series-connected photovoltaic modules, each of which has a plurality of series-connected photovoltaic cells. One quarter to one half of all photovoltaic modules of the at least one string can be short-circuited by means of a switch. Activation of the switch takes place when a predefined voltage value across the string is exceeded. The shorting switch is only present in some of the arrays making up the photovoltaic generator, which reduces cabling costs. Because of the parallel connection of the arrays, the voltage of the arrays without shorting switches is drawn down to a lower voltage that is safe for the inverter.
Owner:ADENSIS
Semiconductor device
InactiveUS20060244091A1Avoid paddingReduces change in curvatureOther printing matterWriting implementsCapacitanceSchottky barrier
In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, P-type diffusion layers are formed in a floating state closer to a cathode region side than the P-type diffusion layer, and are capacitively coupled with a metal layer to which an anode potential is applied. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.
Owner:SANYO ELECTRIC CO LTD
Trench moseft with trench gates underneath contact areas of ESD diode for prevention of gate and source shortate
InactiveUS20090212354A1Avoid ESD shortingOvervoltage protectionTransistorSolid-state devicesOvervoltageZener diode
A trench DMOS transistor having overvoltage protection and prevention for shortage between gate and source when contact trenches are applied includes a substrate of a first conductivity type and a body region of a second conductivity type formed over the substrate. Trench gates extend through the body region and the substrate. An insulating oxide layer lines the trench and overlies the body region. A conductive electrode is deposited in the trench so that it overlies the insulating layer. A source region of the first conductivity type is formed in the body region adjacent to the trench. An undoped polysilicon layer overlies a portion of the insulating layer defining the Zener diode region. A plurality of cathode regions of the first conductivity type is formed in undoped polysilicon layer. At least one anode region is in contact with adjacent ones of the plurality of cathode regions. Trench gates underneath the Zener diode act as the buffer layer for prevention of shortage between gate and source.
Owner:FORCE MOS TECH CO LTD
Charging circuit
InactiveUS20070263420A1Overvoltage protectionAvoid it happening againBatteries circuit arrangementsAc-dc conversionBattery chargeCharge current
In a charging circuit charging a battery based on a power supply voltage from an external power supply, a charging transistor is provided on a path from the external power supply to the battery. A charging control circuit is integrated on a semiconductor substrate, and adjusts an ON state of the charging transistor to control a charging current supplied to the battery. The voltage adjusting circuit provided on an electric power supply path from the external power supply to a power supply terminal of the charging control circuit generates a necessary voltage drop. The current adjusting circuit adjusts the ON state of the charging transistor such that a voltage of the battery is brought close to a predetermined voltage value. The clamp circuit clamps a voltage at the power supply terminal of the charging control circuit below a predetermined clamp voltage.
Owner:ROHM CO LTD
LED driving apparatus and method and display apparatus using the LED driving apparatus and method
InactiveUS20130113844A1Efficiently sensedReduce output voltageElectrical apparatusElectroluminescent light sourcesEngineeringVoltage reference
A display apparatus is provided. The display apparatus includes a display panel which displays an image; a light-emitting diode (LED) module which provides backlight to the display panel; an LED driving unit which applies a driving voltage to the LED module; and an LED driving control unit which senses the driving voltage from the LED module and stops an operation of the LED driving unit if the sensed driving voltage is lower than a first reference voltage or higher than a second reference voltage.
Owner:SAMSUNG ELECTRONICS CO LTD
Circuit and method for regulating a DC voltage and power converter
ActiveUS20120147634A1Reduce overvoltageAvoid damageAc-ac conversionElectric generator controlElectricityControl signal
A circuit for regulating a DC voltage is provided. The circuit includes: a controllable switch system, a resistor, a first control circuit and a second control circuit. The controllable switch system includes a first terminal, a second terminal, a first control terminal, and a second control terminal. The controllable switch system is configured to establish an electrical connection between the first terminal and the second terminal, if a first control signal applied to the first control terminal satisfies a first criterion or if a second control signal applied to the second control terminal satisfies a second criterion; A A method for regulating a DC voltage and an AC-to-AC-converter are described.
Owner:SIEMENS AG
Semiconductor device with protection element disposed around a formation region of a transistor
ActiveUS7906811B2Overvoltage protectionAvoid concentrationTransistorThyristorEngineeringP–n junction
In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, a MOS transistor is formed. Around the MOS transistor, a protection element having a PN junction region is formed. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of the MOS transistor. By use of this structure, when negative ESD surge is applied to a pad for a source electrode, the PN junction region of the protection element breaks down. Accordingly, the MOS transistor can be protected.
Owner:SEMICON COMPONENTS IND LLC
Systems And Methods For Inductive Overvoltage Protection Of PFC Buk Capacitors In Power Supplies
ActiveUS20150318685A1Quality improvementImprove reliabilityVolume/mass flow measurementPower supply for data processingOvervoltageEngineering
Systems and methods are provided that may be implemented for overvoltage protection of bulk capacitors employed in power factor correction (PFC) circuitry components of switched mode power supply units (PSUs) using one or more inductive overvoltage feedback protection paths (OVPs) to monitor a voltage indicative of a PFC bulk capacitor by sensing the real time voltage at one or both of the primary and / or secondary side windings of a PSU transformer, and / or using an auxiliary windings of a PSU transformer.
Owner:DELL PROD LP
Charging circuit
InactiveUS7821233B2Overvoltage protectionAvoid it happening againBatteries circuit arrangementsAc-dc conversionElectric forceCharge current
In a charging circuit charging a battery based on a power supply voltage from an external power supply, a charging transistor is provided on a path from the external power supply to the battery. A charging control circuit is integrated on a semiconductor substrate, and adjusts an ON state of the charging transistor to control a charging current supplied to the battery. The voltage adjusting circuit provided on an electric power supply path from the external power supply to a power supply terminal of the charging control circuit generates a necessary voltage drop. The current adjusting circuit adjusts the ON state of the charging transistor such that a voltage of the battery is brought close to a predetermined voltage value. The clamp circuit clamps a voltage at the power supply terminal of the charging control circuit below a predetermined clamp voltage.
Owner:ROHM CO LTD
Voltage conversion device
InactiveUS20090033302A1Overvoltage protectionHigh control response capabilityAC motor controlDc-dc conversionBoost converterControl circuit
When a voltage conversion operation is started, a control circuit (30) performs an operation to obtain a voltage command value for each control timing with setting a target voltage obtained based on a torque command value (TR) and a motor rotation number (MRN) as a final value, and controls a boost converter (12) so as to match an output voltage (Vm) with the voltage command value. The control circuit (30) has a prescribed threshold value set to be lower than the target voltage. The control circuit (30) controls the boost converter (12) with setting an absolute value of a rate of change between control timings to a first value until the voltage command value reaches the prescribed threshold value. When the voltage command value becomes at least the prescribed threshold value, the boost converter (12) is controlled with setting the absolute value of the rate of change to a second value smaller than the first value.
Owner:TOYOTA JIDOSHA KK
Power conversion device
ActiveUS20140203740A1Avoid damageSimple configurationElectric motor controlDynamo-electric converter controlOvervoltageZener diode
A power conversion device for driving a load, including a power conversion device main body configured to receive an input of a power supply voltage and to drive the load, and a brake circuit configured to protect the power conversion device main body from overvoltage applied thereto. The brake circuit includes a Zener diode that becomes conductive when the voltage applied to the power conversion device main body exceeds a predetermined value, to thereby suppress the voltage.
Owner:FUJI ELECTRIC CO LTD
Antifuse programming, protection, and sensing device
InactiveUS7236043B2Overvoltage protectionRead-only memoriesHeating/cooling contact switchesOvervoltageAudio power amplifier
An antifuse programming, protection, and sensing device incorporates a control circuit to program and protect an antifuse. The antifuse, which is initially constructed as a low conductivity path, is programmable to a high conductivity path by application of an elevated voltage across terminals of the antifuse. Application of 0 volts to the VDD node of a conduction control portion of the antifuse programming, protection, and sensing device allows an elevated voltage for programming to be applied to the antifuse. Upon application of a nominal working voltage to the VDD node of the conduction control circuitry, the antifuse and an adjoining sense amplifier circuit are protected from overvoltage and tampering. The sense amplifier supplies a sense current to the antifuse, measures a voltage at an input to the antifuse, and determines a programmed state if a measured voltage level is low.
Owner:ATMEL CORP
Common mode filter
ActiveUS20150029623A1Easy to implementOvervoltage protectionMultiple-port networksFixed capacitor dielectricElectromagnetic couplingEngineering
Disclosed herein is a common mode filter, including: first and second coil layers electromagnetically coupled to each other; a pair of external terminals connected to ends of the first coil layer and a pair of external terminals connected to ends of the second coil layer; a first ESD prevention member connecting between the pair of external terminals carrying electric current with the first coil layer and a second ESD prevention member connecting between the pair of external terminals carrying electric current with the second coil layer; and a ground electrode connecting the first ESD prevention member to the second ESD prevention member, wherein the ground electrode has a stepped portion formed at the center.
Owner:SAMSUNG ELECTRO MECHANICS CO LTD
Semiconductor device
ActiveUS7737523B2Inhibit deteriorationOvervoltage protectionMagnetotherapy using permanent magnetsOrthopedic corsetsSchottky barrierDiffusion layer
In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, a P-type diffusion layer is formed to be connected to a P-type diffusion layer and is extended to a cathode region. A metal layer to which an anode electrode is applied is formed above the P-type diffusion layer, thereby making it possible to obtain a field plate effect. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.
Owner:SEMICON COMPONENTS IND LLC
Dynamic source balancing methods and systems
InactiveUS20140039711A1Reducing and minimizing energy costQuick functionMechanical power/torque controlLevel controlPower flowElectricity market
Dynamic source balancing methods and systems are provided. Power may be provided to a user from one or multiple energy sources. At any time point, the multiple energy sources may have different LMPs and power flow among the energy sources may be controlled such that a user's energy costs are reduced or minimized. Energy arbitrage may be realized for a user by taking into account of various factors related to the energy sources, the power grid, the power market, and / or the user.
Owner:VARENTEC
Battery management apparatus and method for protecting a lithium iron phosphate cell from over-voltage using the same
ActiveUS20190157896A1Overvoltage protectionPrevent overdischargeCell electrodesElectrical testingElectricityLithium iron phosphate
A battery management, including a voltage measuring unit electrically connected to multiple lithium iron phosphate (LFP) cells in an LFP battery, the LFP cells being connected in series, to individually measure voltage of each LFP cell and output a voltage value indicative of the measured voltage, and a control unit configured to output a first signal requesting the start of a charging process of the LFP, and when at least one of the voltage values of the multiple LFP cells outputted from the voltage measuring unit reaches a threshold voltage value while the charging process is performed by the first signal, output a second signal requesting the stop of the charging process and output a third signal requesting the start of a discharging process.
Owner:LG ENERGY SOLUTION LTD
Antifuse programming, protection, and sensing device
InactiveUS20070085593A1Overvoltage protectionRead-only memoriesHeating/cooling contact switchesSense amplifierVolt
An antifuse programming, protection, and sensing device incorporates a control circuit to program and protect an antifuse. The antifuse, which is initially constructed as a low conductivity path, is programmable to a high conductivity path by application of an elevated voltage across terminals of the antifuse. Application of 0 volts to the VDD node of a conduction control portion of the antifuse programming, protection, and sensing device allows an elevated voltage for programming to be applied to the antifuse. Upon application of a nominal working voltage to the VDD node of the conduction control circuitry, the antifuse and an adjoining sense amplifier circuit are protected from overvoltage and tampering. The sense amplifier supplies a sense current to the antifuse, measures a voltage at an input to the antifuse, and determines a programmed state if a measured voltage level is low.
Owner:ATMEL CORP
Semiconductor device and method of manufacturing the same
In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, an NPN transistor is formed. Around the NPN transistor, a protection element having a PN junction region is formed. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of the NPN transistor. By use of this structure, when negative ESD surge is applied to a pad for a base electrode, the PN junction region of the protection element breaks down. Accordingly, the NPN transistor can be protected.
Owner:SEMICON COMPONENTS IND LLC
Power transmission device and vehicle electrical system
InactiveUS20170036622A1Increase reliabilitySimple supplyLoad balancing in dc networkPropulsion using engine-driven generatorsElectric power transmissionElectrically conductive
A power transmission device including at least one first input terminal and a second input terminal for the at least dual-channel supply of electric power to the power transmission device, and including at least one output terminal for routing the electric power to a consumer, the power transmission device including an input switch which is designed for the electrically conductive connection of the first input terminal and / or the second input terminal to the at least one output terminal. Furthermore, a vehicle electrical system including such a power transmission device is also provided.
Owner:ROBERT BOSCH GMBH
Semiconductor device
ActiveUS20200020797A1Overvoltage protectionTransistorSolid-state devicesPhysicsSemiconductor components
In an effective region of an active region, a main semiconductor element and a source pad thereof are disposed. A non-operating region of the active region excludes the effective region and is a high-function region in which a gate pad of the main semiconductor element and other electrode pads are disposed. An edge termination region and the electrode pads are separated by an interval equivalent to at least a width of one unit cell of the main semiconductor element. In the high-function region, at a border of the edge termination region, a lead-out electrode is provided on a front surface of a semiconductor substrate. The lead-out electrode has a function of leading out displacement current that flows to the high-function region from the edge termination region when the main semiconductor element is OFF. Thus, destruction at the edge termination region may be suppressed.
Owner:FUJI ELECTRIC CO LTD
Overvoltage protection circuit
InactiveUS7768752B2Overvoltage protectionOptimizationTransistorEmergency protective arrangements for limiting excess voltage/currentOvervoltageElectricity
An overvoltage protection circuit includes an output transistor connected between a first power supply and an output terminal, a load connected to the output terminal, a dynamic clamping circuit for controlling a voltage difference between the first power supply and the output terminal, and a clamp selection switch electrically connected between the dynamic clamping circuit and the output terminal, and a conductive condition of the clamp selection switch is determined according to a comparison between a reference voltage and a voltage of the output terminal.
Owner:RENESAS ELECTRONICS CORP
Power electronics unit
ActiveUS20180375321A1Overvoltage protectionIncrease speedElectronic commutation motor controlElectric motor controlOvervoltageElectric machine
A power electronics unit for driving an electric machine excited by permanent magnets and including a rotor and a stator having at least one stator winding, comprising at least one power switch designed to drive the stator winding, and an overvoltage protection device to protect the power switch from overvoltage. The overvoltage protection device comprises a phase voltage detecting device associated with the power switch as well as a short-circuit switching circuit which, when a predetermined phase voltage threshold value of the phase voltage detected by the phase voltage detection device is reached or exceeded, is adapted to be activated for short-circuiting the stator winding associated with the power switch. The short-circuit switching circuit comprises the power switch designed to drive the stator winding.
Owner:L 3 COMM MAGNET MOTOR
Complex protection device
ActiveUS9722418B2Overvoltage protectionEfficient use ofThermal switch detailsEmergency protective arrangements for limiting excess voltage/currentOvervoltageSurface mounting
Disclosed is a complex protection device including a substrate, fuse terminals provided on the substrate, first resistive terminals provided on the substrate so as to be separated from the fuse terminals, second resistive terminals provided on the substrate opposite to the first resistive terminals across the fuse terminals, a fusible element connected to the fuse terminals, a first surface-mounted resistive element connected to the first resistive terminals, a second surface-mounted resistive element connected to the second resistive terminals, at least one printed resistive element connected to at least one of the first resistive terminals and the second resistive terminals and connected to at least one of the first surface-mounted resistive element and the second surface-mounted resistive element, and a switching element controlling flow of current to the first and second surface-mounted resistive elements and the at least one printed resistive element if overvoltage is applied.
Owner:SMART ELECTRONICS CO LTD
Battery management apparatus and method for protecting a lithium iron phosphate cell from over-voltage using the same
ActiveUS10873201B2Overvoltage protectionAvoid Overvoltage ProblemsCell electrodesElectrical testingOvervoltageLithium iron phosphate
A battery management, including a voltage measuring unit electrically connected to multiple lithium iron phosphate (LFP) cells in an LFP battery, the LFP cells being connected in series, to individually measure voltage of each LFP cell and output a voltage value indicative of the measured voltage, and a control unit configured to output a first signal requesting the start of a charging process of the LFP, and when at least one of the voltage values of the multiple LFP cells outputted from the voltage measuring unit reaches a threshold voltage value while the charging process is performed by the first signal, output a second signal requesting the stop of the charging process and output a third signal requesting the start of a discharging process.
Owner:LG ENERGY SOLUTION LTD
DC power box
InactiveCN105356333AProtection securityOvervoltage protectionBoards/switchyards circuit arrangementsSubstation/switching arrangement cooling/ventilationLightning arresterControl circuit
The invention discloses a DC power box, comprising a box body and a box door, wherein the box body is internally provided with a control circuit and a battery; the control circuit is connected with a low-voltage protection relay and a lightning arrester, a drainage passage is connected between the top and the bottom of the box body and is arranged in the side wall of the box body. With adoption of the DC power box, such problems of the existing DC power box, such as absence of low-voltage protection and poor heat dissipating effect, can be solved.
Owner:STATE GRID ZHEJIANG PINGHU POWER SUPPLY +3
Impulse lightning arresters and pulse arrester columns for power lines
InactiveUS6912111B2Overvoltage protectionFacilitates ensuring required resistance valueEmergency protective arrangement detailsOvervoltage protection resistorsDielectricHigh potential
The inventive spark arrester comprises an odd number of series-connected spark units forming a chain, with each spark units comprising at least one discharge gap. In order to increase the reliability of protection of electric installation components having a flat voltage—time characteristic by ensuring a low discharge level and a fast response of the arrester, the output of each even spark unit is connected via a resistor to a clamp connecting the arrester to the protected components subjected to a high potential, while the output of each odd spark unit, except the last one, is connected via another resistor to another clamp connecting the arrester to the protected components subjected to a low potential. Preferred embodiments of the arrester promote a generation of a long surface discharge along a surface of tubular body made of a solid dielectric, said body being common for all spark units constituting the arrester. Arresters comprising several tubular bodies and arrester assemblies made of several arresters are also disclosed.
Owner:OTKRYTOE AKTSIONERNOE OBSHCHESTVO RIF
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