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Method for patterning quantum dot layer and method for manufacturing quantum dot color filter

The present invention provides a method for patterning a quantum dot layer and a method for manufacturing a quantum dot color filter. The method for patterning a quantum dot layer according to the present invention uses a photoresist layer having a patterned structure as a shielding layer to subject a monocolor quantum dot layer to etching to form a patterned quantum dot layer. The method simplifies the constituent components for making a quantum dot paste that is used to form a quantum dot layer and simplifying a surface chemical environment of the quantum dots to thereby increasing light emission efficiency of the quantum dot. Further, the method may manufacture a fine quantum dot pattern, greatly improving the resolution of the patterned quantum dot layer. The method for manufacturing a quantum dot color filter according to the present invention is applied to manufacturing a quantum dot color filter on the basis of the above-described method for patterning a quantum dot layer and the quantum dot color filter so manufactured has a fine quantum dot pattern, the light emission efficiency of the quantum dots being high to thereby effectively improve the resolution and backlighting utilization of a display device.
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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