The invention relates to the technical field of material science, and particularly discloses a method for testing photoelectric and thermal characteristics of a
semiconductor device, which comprises the following steps of: acquiring
crystal impurity evaluation parameters of the
semiconductor device to perform
crystal impurity evaluation of the
semiconductor device, and acquiring a
crystal impurity interference correction value, the method comprises the steps of obtaining a thermal characteristic parameter set and a
light characteristic parameter set of a
semiconductor device, determining a test temperature array and a
test light intensity array, determining a plurality of photo-
thermal coupling test schemes based on the test temperature array and the
test light intensity array, applying each photo-
thermal coupling test scheme to the
semiconductor device and obtaining an electrical characteristic tested
data set, according to the method, the electrical characteristic tested value is calculated based on the electrical characteristic tested
data set corresponding to each photo-
thermal coupling test scheme, the optimal photo-thermal
coupling test scheme is determined, the rationality and adaptability of formulating the photo-thermal
coupling test scheme are improved, and it is ensured that the test result can reflect the characteristic performance of the
semiconductor device in various environments.