The invention provides a manufacturing method of a
semiconductor device, and relates to the
semiconductor technical field; the method comprises the following steps: S101, providing a
semiconductor substrate; S102, forming an antireflective layer in a boundary between a zone wherein
ion injection is to be carried out and a zone wherein an
ion implantation shielding layer is to be formed on the semiconductor substrate; S103, employing
photoresist to form the
ion implantation shielding layer on the semiconductor substrate. The manufacturing method of the
semiconductor device adds the step in which the antireflective layer is formed in a boundary between the zone wherein ion injection is to be carried out and the zone wherein the
ion implantation shielding layer is to be formed; in a process to
expose a
photoresist film so as to form the
ion implantation shielding layer, the reflection light from the semiconductor substrate can be prevented or stopped from entering the
photoresist film, so the reflection light cannot cause
size reduction of the
ion implantation shielding layer, thereby ensuring
key size of the ion implantation shielding layer, and improving performance of the
semiconductor device.