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Power semiconductor device and the method of manufacturing the same

A semiconductor device according to the invention includes n-type semiconductor substrate 1; trenches 15 formed in the surface portion of semiconductor substrate 1; a protruding semiconductor region between trenches 15; p-type base layer 2 in the protruding semiconductor region, p-type base layer 2 being positioned as deep as or shallower than trench 15; an n++-type emitter region or a source region in the surface portion of p-type base layer 2; gate insulator film 4a on the first side wall of the protruding semiconductor region; and gate electrode 6 on gate insulator film 4a. Trench 15 is from 0.5 μm to 3.0 μm deep and the short side of trench 15 is 1.0 μm or longer. The short side of the protruding semiconductor region is from 0.5 μm to 3.0 μm long. Gate electrode 6 contains electrically conductive polycrystalline silicon as its main component. Gate electrode 6 is from 0.2 μm to 1.0 μm thick. The semiconductor device according to the invention is manufactured with very low manufacturing costs and with a high throughput of non-defective products. The semiconductor device according to the invention facilitates exhibiting a high IE effects, exhibiting a low ON-state voltage, preventing electric field localization from causing and realizing a high breakdown voltage.
Owner:FUJI ELECTRIC CO LTD
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